• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.757-761
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• 2001

We studied emitting properties of organic electroluminescent devices fabricated using the spin-coating and Langmuir-Blodgett(LB) technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. LB monolayer of poly(3-hexylthiophene)(P3HT) was deposited 27 layers onto the indium-tin-oxide(ITO) substrate as Y-type films by the vertical dipping method. In the absorption spectra, the λ$\_$max/ of P3HT-AA LB films and of spin-coating films showed about at 510, 545 and 590 nm corresponding to 2.43, 2.28, 2.10eV. And we observed that the turn-on voltage of devices deposited by LB method(10V) was higher than that of spin-coating method(8.5V) in voltage-current-luminance characteristic. In the logV-logJ characteristics of ITO/P3HT-AA LB/Al device, we confirmed that El device fabricated by LB method follows three conduction mechanisms: ohmic, space-charge-limited current(SCLC) conduction and trapped-carrier-limited space-charge current(TCLC) conduction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.167-170
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• 1998

The electrical characteristics of Stearic acid LB films were investigated to develop the gas sensor using Langmuir-Blodgett(LB) films. The deposition status of LB films were verified by the measurements of UV absorbance and I-V characteristics. The conductivity of Stearic acid LB films at room temperature was $10^{-8}[S/cm]$, which is typical of semiconductor. The conductivity was found to increase as the temperature was increased. The acitivation energy was about 1[eV].

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.238-240
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• 1991

Langmuir-Blodgett(L.B) method is one of the most possible candidate for the fabrication of the micro scale memory or electrical devices. As for a fundamental study on the conduction mechanism in the organic thin membrane, N-alkyl quinolium-TCNQ complexes were synthesized and their physical properties were examined spectroscopically. LB film was produced by using Moving Wall Type LB Apparatus. The average area per molecule (N-docosylquinolium-TCNQ) was $67.97{\AA}^2$ which is ${\AA}^2$ larger than N-docosyl quinolium-TCNQ.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.171-174
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• 1998

Quartz crystal in contact with viscoelastic medium is described directly in terms of the electrical equivalent circuit of the system. Stearic acid is used as viscoelastic medium and deposited on the surface of quartz crystal using the Langmuir-Blodgett(LB) method. Impedance properties of quartz crystal coated with LB films which were investigated and the possibility of applying the technique to chemical sensing introduced.

• 센서학회지
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• 제31권4호
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• pp.249-254
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• 2022

To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), the use of a densely packed QD film is crucial to prevent the formation of leakage current pathways and increase in interface resistance. Spin coating is the most common method to deposit QDs; however, this method often produces pinholes that can act as short-circuit paths within devices. Since state-of-the-art QD-LEDs typically employ mono- or bi-layer QDs as an emissive layer because of their low conductivities, the use of a densely packed and pinhole-free QD film is essential. Herein, we introduce the Langmuir-Blodgett (LB) technique as a deposition method for the fabricate densely packed QD films in QD-LEDs. The LB technique successfully transfers a highly dense monolayer of QDs onto the substrate, and multilayer deposition is performed by repeating the transfer process. To validate the comparability of the LB technique with the standard QD-LED fabrication process, we fabricate and compare the performance of LB-based QD-LEDs to that of the spin-coating-based device. Owing to the non-destructiveness of the LB technique, the electroluminescence efficiency of the LB-based QD-LEDs is similar to that of the standard spin coating-based device. Thus, the LB technique is promising for use in optoelectronic applications.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.566-570
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• 2010

Electro-optic modulators based on 25 monolayer langmuir-blodgett films of vinylidene fluoride and trifluoroethylene, P(VDF-TrFE), were fabricated. The LB films were prepared by transferring the monolayers on to an ITO coated glass with a surface pressure of 5 dyne/cm by use of the langmuir-schaefer deposition method. Measurement of the electro-optic coefficient has been carried out using a simple reflection techique. The E/O coefficient was found to be 154.9 pm/V and that value remained stable for at least 50 days.

• 한국응용과학기술학회지
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• 제30권4호
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• pp.754-760
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• 2013

순환전압전류법에 의한 인지질(sphingomyelin, SP)과 polyamic acid(PAA) 혼합물의 농도(몰비 1:1, 2:1 및 3:1)를 변화시켜 혼합단분자 LB막에 대한 전기화학적 특성을 조사하였다. SP과 PAA 혼합물의 단분자 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 $KClO_4$ 용액에서 3 전극 시스템으로 측정하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50~250 mV/s로 설정하였다. 그 결과 SP와 PAA 혼합물의 LB막은 순환전압전류도표로부터 환원전류로 인한 비가역공정으로 나타났다. 혼합물 LB막의 혼합(SP:PAA) 몰비가 1:1, 2:1 및 3:1에서 확산계수(D)는 각각 $2.670{\times}10^{-5}$, $3.562{\times}10^{-5}$ 및 $1.005{\times}10^{-5}cm^2s^{-1}$을 얻었다.

• 한국응용과학기술학회지
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• 제30권1호
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• pp.64-70
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• 2013

우리는 순환전압전류법에 의한 인지질(sphingomyelin)과 polyamic acid 혼합물의 단분자 LB막에 대한 전기화학적 특성을 조사하였다. Sphingomyelin과 polyamic acid 혼합물의 단분자 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 $KClO_4$ 용액에서 3 전극 시스템으로 측정하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s로 설정하였다. 그 결과 sphingomyelin과 polyamic acid 혼합물의 LB막은 순환전압전류도표로부터 환원전류로 인한 비가역공정으로 나타났다. Sphingomyelin과 polyamic acid 혼합물 LB막에서 전해질농도가 0.1N과 0.2N에서 확산계수(D)는 각각 $2.67cm^2s^{-1}{\times}10^5$과 $5.23cm^2s^{-1}{\times}10^6$을 얻었다.

• 한국응용과학기술학회지
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• 제34권2호
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• pp.376-381
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• 2017

지방산 혼합물 단분자층 LB막의 전기화학적 특성을 통하여 그 안정성을 순환전압전류법으로 조사하였다. 지방산혼합물 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 0.01N $KClO_4$ 용액에서 3 전극 시스템으로 순환전압전류법에 의해 측정하였다. 측정범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s로 설정하였다. 그 결과 지방산혼합물 LB막은 순환전압전류곡선으로부터 산화전류로 인한 비가역 공정으로 나타났다. 지방산혼합물 LB막은 전해질농도가 0.01 N $NaClO_4$ 용액에서 확산계수(D)는 각각 $7.9{\times}10^{-2}cm^2s^{-1}$을 얻었다.

• Macromolecular Research
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• 제12권6호
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• pp.581-585
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• 2004

A copolymer P[OSA-MI] was synthesized by copolymerization of its corresponding monomers, N-phenyl maleimide (MI) and 2-octen-l-ylsuccinic anhydride (OSA). The polymer (poly[2-[1-(2,5-dioxo-l-phenylpyrroli­din-3-ylmethyl)heptyl]-succinic acid 4-(2-$\{$ethyl-[4-(4-nitrophen-ylazo)phenyl]amino$\}$ethyl)ester]) P[DR1MA-MI] was obtained from the reaction of P[OSA-MI] with 2-[4-(4-nitrophenylazo)-N-ethylphenylamino] ethanol (DR1). A stable monolayer of P[DRIMA-MI] was formed by spreading the solution of the polymer in chloroform. In Y-type Langmuir-Blodgett (LB) films prepared using this Langmuir-Blodgett method, the second harmonic waves generated from adjacent mono layers canceled each other out. In X-and Z-type LB films, the second harmonic intensity increased upon increasing the number of monolayers, but this increase was somewhat smaller than predicted by the square law. This phenomenon is due to defects or imperfect alignment of the dipoles in the LB film. The generation of second harmonic waves from Y-type LB films having an even number of mono layers supports this argument. The degree of imperfection seemed to increase as the number of layers increased. The second-order nonlinear optical properties of spin-cast films of these polymers were also measured. The largest second harmonic coefficient of the poled P[DRIMA-MI] film coated on a glass plate was 19 pm/V.