• Progress in Superconductivity
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• v.7 no.1
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• pp.52-57
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• 2005

[ $YBa_{2}Cu_{3}O_y$ ] superconducting films were prepared on $LaAlO_3$(100) single crystal substrate by spray pyrolysis method. The precursor solution was prepared by dissolving nitrate powders in de-ionized water. Both of ultrasonic and concentric nebulizers were used in order to generate fine droplets of precursor solution. C-axis oriented films were obtained at deposition temperature of $750\~850^{\circ}C$ and working pressure of 100 Torr and 500 Torr. In case of ultrasonic nebulizer, films showed rough and porous surface morphology due to formation of enormous droplets, while smooth and dense films were obtained for concentric nebulizer. A transport $J_c$ value of $0.43\;MA/cm^2$ at 77 K and self field was achieved on $LaAlO_3$(100) single crystal substrate.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.357-364
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• 2000

The structural, electrical and gas sensing characteristics of $LaFeO_3$ thin films fabricated by r.f. magnetron sputtering method on $Al_2O_3$ substrates were investigated. (121) domonant crystalline plane was observed for the films heat-treated at above $600^{\circ}C$ and gas sensing properties showed p-type semiconductor behaviors. Gas sensing characteristics of the $LaFeO_3$ thin films was studied as a function of film thicknesses and heat treatment temperatures. While the variation of the film thickness showed a little effect on the sensitivity, the heat treatment temperature was critical to the sensitivity. The thin films with thickness of 400 nm heat-treated at $800^{\circ}C$ showed the sensitivity of 400% for 5000ppm CO and 60% for 350ppm $NH_3$ at the working temperature of $300^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.17-24
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• 1985

In the composition of $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ the effect of particle size on PbO vaporization were measured, . The initial step of discontinuous vaporization of unreated PbO during the calcining process was depended on the particle size. All additives $La_2O_3Nb_2O_5$ and $Al_2O_3$ inhibited the grain growth of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ +2wt% excess PbO. The dielectric and piezoelectric properties of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ were improved by the addition of 2wt% excess PbO and proper additive. The electromechanical planar coupling factor of 0.65 and mechnical quality factor of 390 could be obtained by adding 5wt% $Nb_2O_5$ to the composition 2wt% excess PbO+$Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.205-205
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• 2009

• Progress in Superconductivity and Cryogenics
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• v.10 no.3
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• pp.5-8
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• 2008

On highly-textured IBAD-MgO templates, we have tried to find proper buffer layers among various candidate materials, including $LaMnO_3$ (LMO), $La_2Zr_2O_7$ (LAO), $LaAlO_3$ (LAO), $LaGaO_3$ (LGO), $NdGaO_3$ (NGO), and $BaZrO_3$ (BZO). All buffer layers were deposited on the IBAD-MgO templates by KrF pulsed laser deposition(PLD). LAO layer showed an armorphous phase. LZO, LGO, and NGO layers showed polycrystalline growth. Only LMO and BZO layers exhibited c-axis oriented biaxially textured films. Optimally processed LMO buffer layer at deposition temperature of $750^{\circ}C$ and $PO_2$ of 100mTorr exhibited ${\triangle}{\phi}$ value of ${\sim}-5.2^{\circ}$ and RMS roughness of 5.6nm. Interestingly, BZO buffer layers with ${\triangle}{\phi}$ values of ${\sim}-6^{\circ}$ could be routinely produced over a wide PLD processing condition.

• Clean Technology
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• v.18 no.1
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• pp.95-101
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• 2012

The Co and Ni catalysts supported on $Al_2O_3$ for partial oxidation of methane producing hydrogen were synthesized using impregnation to incipient wetness. And the promotion effects of metals such as Mg, Ce, La and Sr in partial oxidation of methane over these $Co/Al_2O_3$ and $Ni/Al_2O_3$ were investigated. Reaction activity of these catalysts for the partial oxidation of methane was investigated in the temperature range of 450~$650^{\circ}C$ at 1 atm and $CH_2/O_2$ = 2.0. The catalysts were characterized by BET, XRD and SEM/EDX. The results indicated that the catalytic performance of these catalysts was improved with the addition of 0.2 wt% metal promoter. The Mg promoted $Co/Al_2O_3$ catalyst showed the highest $CH_4$ conversion and hydrogen selectivity at higher temperature than $500^{\circ}C$. The Ce and Sr promoted Ni catalysts superior to Co-based catalysts in the low temperature range. The addition of metal promoter to $Co/Al_2O_3$ and $Ni/Al_2O_3$ catalysts increased the surface area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.56-61
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• 1999

Highly conductive oxide films of BaRuO$_3$ have been grown heteroepitaxially on (100) LaAlO$_3$ single crystalline substrates by using pulsed laser deposition. The films are c-axis oriented with an in-plane epitaxial relationship of <010><100>BaRuO$_3$ // <110>LaAlO$_3$. Atomic force microscopy (AFM) observation shows that they consist of a fine-arranged network of grains and have a mosaic microstructure. Generally temperature-dependent resistivity shows the transition from metallic curve to semiconductor-metallic twofold curve by the deposition conditions for Ru oxide based materials like SrRuO$_3$, CaRuO$_3$, BaRuO$_3$, etc.. This twofold curve comes from the structural similarity of Ru oxide based materials including BaRuO$_3$. We find that the distance of Ru-Ru bonding in the unit cell of BaRuO$_3$ as well as the grain boundary scattering could be the two important causes of these interesting conductive properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.157-160
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• 2002

The ferroelectric domain variation and electrical performance of $Pb(Zr,Ti)O_{3}$ (PZT) based capacitors through La additions were systematically studied. La substitution up to 10 % was performed to lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a (Ti_{0.9}Al_{0.1})N/Pt$ conducting barrier composite. Ferroelectric capacitors substituted with 10 % La show significantly lower coercive voltage compared to capacitors with 0 % and 3 % La. This is attributed to a systematic microstructure change into $180^{\circ}C$ domain and decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. These capacitors show promise as storage elements in low power memory architectures.

• Journal of the Korean Ceramic Society
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• v.25 no.1
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• pp.42-48
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• 1988

Commercially available PTCR (Postive Temperature Coefficient of Resistivity) ceramics which have low room temperature resistance, high PTC effect and temperature coefficient were prepared by La3+ doped semiconducting barium calcium titanate soild solutions. PTCR characteristics were remarkably improved by addition of AST (1/3 Al2O3$.$3/4SiO2$.$1/4TiO2) and MnCl2. That can be explained by formation of liquid phase during sintering and acceptor level on the intergranular layer. Resistivity anormaly increased with decreasing cooling rate. Optimum manufacturing conditions were cooling rate below 100$.$C/hr, Ca and Mn content of 4 mol% &, 0.09-0.12mol% respectively.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.176-181
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• 2000

Computer-based atomistic simulation methods are applied to address quantitatively the crystal defect chemistry of strontium hexaaluminate, SrAl/sub 12/O/sub 19/. Our calculations show that oxygen Frenkel disorder is the dominant intrinsic defect mode to be expected in the multi-component oxide, though Schottky disorder may also exist. When La and Mg enter into SrAl/sub 12/O/sub 19/. Mg prefers to occupy Al(3)4f tetrahedral sites in the magnetoplumbite structure. Our calculations also indicate that O/sub Sr/ defect is improbable in the structure.