• Title/Summary/Keyword: LED wavelength

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A Study on BER Performance Improvement by using Adaptive FEC schemes in Visible Light Communication (백색 LED기반 가시광 통신시스템의 선택적 FEC 적용을 통한 BER 성능 향상에 관한 연구)

  • Kim, Kyun-Tak;Yun, Suck-Chang
    • Journal of Convergence Society for SMB
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    • v.6 no.4
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    • pp.99-106
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    • 2016
  • In this paper, we propose an adaptive FEC scheme in visible light communication using white LED. To this end, we investigate the red, green and blue mixing ratio of white LED in order to achieve the white color, and the mixing ratio of those wavelength can be defined as 4 types. Based on those properties, the FEC technique is applied to the wavelength band with the lowest mixing ratio according to mixing ratio types. At that point, we use a LDPC channel coding scheme as the FEC technique. Therefore, the proposed system can mitigate the reduction of data rate and improve total BER performance.

Excitation Light Source Dependence of Photo-catalytic Efficiency for Benzene Removal (벤젠제거에 대한 광촉매 효율의 여기광원 의존성)

  • Choi, Yong-Seok;Kim, Seong-Jin;Han, Young-Heon;Yu, Soon-Jae;Lee, Eun-Ah;Kim, Hak-Soo;Kim, Song-Gang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.6
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    • pp.510-514
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    • 2005
  • We have investigated the excitation-light source dependence of photo-catalytic efficiency for the benzene removal. The photo-catalytic module for the benzene removal is fabricated by a combination of GaN-based ultraviolet light-emitting diode (UV GaN-LED) and $TiO_2$ thin film coated on an aluminum plate. The benzene reduction rates of 365 nm and 375 nm modules at 60 mA junction current are approximately $8.95\;\%/Hr$ and $9.2\;\%/Hr$, respectively, which indicates that 365 nm GaN-LED is more effective than 375 nm GaN-LED. The benzene reduction efficiency is also noticeably dependent on the excitation wavelength and excitation-light power, as well as it is increased with the shorter wavelength and higher excitation power. This result exhibits that UV GaN-LED is useful to remove the volatile organic compounds (VOCs) existing in the environment.

The Study on Electrical and Optical Properties in LED Module by the Environment Temperature (LED Module의 주위 온도에 따른 전기적 광학적 특성 연구)

  • Lee, Seung-Min;Lee, Seong-Jin;Yang, Jong-Kyung;Yim, Youn-Chan;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.222-223
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    • 2006
  • In this paper, we manufactured high flux LED module with Through Hole type. and we measured electrical, optical and thermal properties by driving type. LED module was composed with 8*8 arrangement form by using the glass epoxy PCB. Also, we measured the most suitable driving type with static voltage driving type and static current driving type. As a result, the LED Module of static voltage driving type showed high luminance characteristic than the static current driving type by suppling enough bias. However, the static current driving type showed more stable driving properties because of fast decreasing properties about brightness by increasing the surrounding temperature in the static voltage driving type. Also, due to Quantum confined Stark effect from piezoelectric field, the wavelength of bule peak shifted to long wavelength direction by increasing the surrounding temperature in the static voltage driving type.

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Fabrication of Silicone Resin TIR Linear Lens and Development of 365 nm Wavelength UV LED Light Source (실리콘 수지 TIR 선형 렌즈 제작 및 365 nm 파장대역 UV LED 조사기 광원 개발)

  • Sung, Jun Ho;Yu, Soon Jae;Anil, Kawan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.6
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    • pp.433-436
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    • 2018
  • A total internal reflection (TIR) linear lens of size $190(W){\times}5(D){\times}2.1(H)mm^3$ has a directivity of $25^{\circ}$ and was made of a polydimethysiloxane (PDMS) silicone resin with a refractive index of 1.4 and a transmittance of 93% at 365 nm UV wavelength. A light source with a size of $190{\times}25.5mm^2$ was fabricated by installing a TIR linear lens on a chip on board (COB) type LED module mounted with a $1.1{\times}1.1mm^2$ size UV LED. The optical characteristics of the light source showed a maximum irradiation density of $3,840mW/cm^2$ at a working distance of 5 mm and a high uniformity of 91.6% over a $150{\times}25mm^2$ irradiation area. The thermal characteristics of the light source were measured at a supply current of 500 mA. The saturation temperature was reached after 30 min of operation, and measured to be $95^{\circ}C$.

Optical Characteristics of LED module due to changing Ambient Temperature and Driving Current (주변온도와 인가전류 변화에 따른 LED module의 광학적 특성)

  • Lee, Seung-Min;Aung, Aye Thida;Yang, Jong-Kyung;Yim, Youn-Chan;Lee, Jong-Chan;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.377-378
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    • 2007
  • In this paper, we were confirmed the optical characteristics of LED module by changing ambient temperature and driving current. When we supplied same driving current, the brightness quality drops due to an increased ambient temperature. The difference of brightness properties came out more large according to an increased driving current. Moreover, peak wavelength become shifted by long wavelength and declined output power by increasing driving current.

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Characterization of Optical Properties of Light-Emitting Diodes Grown on Si (111) Substrate with Different Quantum Well Numbers and Thicknesses

  • Jang, Min-Ho;Go, Yeong-Ho;Go, Seok-Min;Yu, Yang-Seok;Kim, Jun-Yeon;Tak, Yeong-Jo;Park, Yeong-Su;Jo, Yong-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.313-313
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    • 2012
  • In recent years there have been many studies of InGaN/GaN based light emitting diodes (LEDs) in order to progress the performance of luminescence. Many previous literatures showed the performance of LEDs by changing the LED structures and substrates. However, the studies carried out by the researchers so far were very complicated and sometimes difficult to apply in practice. Therefore, we propose one simple method of changing the thickness and the numbers of multiple quantum wells (MQWs) in order to optimize their effects. In our research, we investigated electrical and optical properties by changing the well thickness and the number of quantum well (QW) pair in LED structures by growing the structure -inch Si (111) wafer. We defined the samples from LED_1 to LED_3 according to MQW structure. Samples LED_1, LED_2 and LED_3 consist of 5-pair InGaN/GaN (3.5 nm/ 4.5 nm), 5-pair InGaN/GaN (3 nm/4.5 nm) and 7-pair InGaN/GaN (3.5 nm/4.5 nm), respectively. We characterized electrical and optical properties by using electroluminescence (EL) measurement. Also, Efficiency droop was analyzed by calculating external quantum efficiency (EQE) with varying injection current. The EL spectra of three samples show different emission wavelength peaks, FWHM and the blueshift of wavelength caused by screening the internal electric field because of the effect of different MQW structure. The results of optical properties show that the LED_2 sample reduce the internal electric field in QW than LED_1 from EL spectra. the increase in the number of QW pairs reduces the strain and increase the In composition in MQW. And, the points of efficiency droop's peak show different trend from LED_1 to LED_3. It is related with the carrier density in active region. Thus, from the results of experiments, we are able to achieve high performance LEDs and a reduction of efficiency droop and emission wavelength blueshift by optimizing MQWs structure.

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A Design and Implementation of Circuit for Efficient Power LED Dimming Control (효율적인 고출력 LED 디밍 제어를 위한 회로 설계 및 구현)

  • Kim, Doo-Hyun;Choi, Jae-Ho;Cho, Beom-Joon
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.9
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    • pp.2280-2288
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    • 2014
  • The conventional dimming control methods of LED (Light-emitting dioades) include Analog, PWM (Pulse Width Modulation), and FM (Frequency Modulation) Control. Analog dimming is controlled by adjusting forward current of Power LED. Although Analog dimming is possible to control linearly the brightness levels on a whole range (0%~100%), it comes into existence a variation of wavelength by changing the Power LED's forward current. PWM dimming has achieved by varying in duty of full current flowing to the Power LED. Generally, PWM dimming doesn't make variation of wavelength but have difficulty with adjusting the linear brightness level between 0% and 10%. FM dimming method is on the same wavelength as PWM dimming, however, it has problem of flickering at low level of dimming. This paper propose a efficient dimming control method of Power LED in order to overcome the disadvantages of the above mentioned methods. We apply to Analog method in low level of dimming control and use PWM method in dimming range from 10% to 100%. For the experiment, we design and implement a circuit and test the proposed method. Consequently, we can control the linear brightness of Power LED across the whole range and get the constant wave at different dimming level. The experimental results show the benefits of the proposed method.

A Study on the Lighting and the Photosynthetic Photon Flux Density with LED for Light Reinforcement (보광용 LED의 광특성과 광자속밀도 특성)

  • Lee, Boong-Joo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.22 no.3
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    • pp.333-338
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    • 2021
  • This study determined the characteristics of LED illumination and photosynthetically active radiation flux density (PPFD) for LED lighting design in an indoor plant factory. This was done based on the light wavelength and PPFD intensity required for plant growth. It has been found that the wavelength and intensity are decreased according to the measuring distance, and green light has an important role in illumination characteristics, while blue light has an important role in the PPFD characteristics. Considering only the photosynthetic properties of plants, the effective order of photosynthesis was blue>red>white>green. When the measurement distance was 30 [cm], it was found that reduction levels of 60 [cm], 90 [cm], and 120 [cm] decreased to about 36 [%], 18 [%], and 10 [%], respectively. As a result of the characteristics of mixed light (red:blue=2:1, 3:1, 4:1) and the measurement distance, when the measured value at 30 [cm] is 100%, the measured value at 120 [cm] is 10-11 [%]. From the obtained results, an optimal structure was proposed for maximizing the light efficiency of an indoor greenhouse for future research.

Effect of 850 nm near-infrared light emitting diode irradiation on the production of 5-aminolevulinic acid in Rhodobacter sphaeroides (Rhodobacter sphaeroides에서 5-aminolevulinic acid 생산에 대한 850 nm 근적외선 발광다이오드 조사 효과)

  • Mo, SangJoon
    • Journal of Applied Biological Chemistry
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    • v.64 no.3
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    • pp.217-223
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    • 2021
  • 5-aminolevulinic acid (ALA) is a representative photosensitizer used in numerous fields including cancer diagnosis and treatment. In this study, experiments were conducted to optimize the growth of Rhodobacter sphaeroides and production of ALA through LED irradiation of various wavelengths, addition of organic acid precursors of ALA, and changes in glucose concentration. After 72 h cultivation, the 850 nm wavelength LED irradiated at the same light intensity as the incandescent lamp increased the growth of R. sphaeroides and the production of ALA about 1.5- and 1.8-fold as compared with the control, respectively (p <0.0001 and p <0.0001). As a result of culturing R. sphaeroides by irradiating an LED with a wavelength of 850 nm after adding organic acid to the final concentration of 5 mM in culture medium, the production of ALA was increased about 2.8-fold in medium supplemented with pyruvic acid compared with the control (p <0.0001). In addition, the growth of the strain and the production of ALA were increased about 2.9- and 3.4-fold in medium supplemented with 40 mM glucose compared to the control which added only 5 mM pyruvic acid, respectively (p <0.0001 and p <0.0001). The yield of ALA per cell dry mass was about 1.4 folds higher than that of the control in 20 and 40 mM glucose, respectively (p <0.001). In conclusion, the growth of R. sphaeroides and production of ALA were increased by 850 nm wavelength LED irradiation. It also optimized the growth of R. sphaeroides and production of ALA through organic acid addition and glucose concentration changes.

A Study of the Optimal Process Conditions of AZO:H2 Thin Film for Maximization of the Transmittance of a Blue GaN Light-Emitting Diode with a Wavelength of 470 nm

  • Hwang, Seung-Taek;Park, Choon-Bae;Hoang, Geun-C.
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.6
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    • pp.279-284
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    • 2010
  • This study has been carried out to determine the optimal process conditions of $AZO:H_2$ thin films for the maximization of the transmittance of a blue GaN light-emitting diode (LED) with a wavelength of 470 nm. The Al-doped zinc oxide $(AZO):H_2$ thin films were deposited on a sapphire substrate by radio-frequency magnetron sputtering system with varying substrate temperatures, working pressures and annealing temperatures temperature, working pressure and annealing imposed on a AZO (2wt% $Al_2O_3$) ceramic target. The effect of these variables was investigated in order to improve the light extraction efficiency of the LED. As a result, the (002)-oriented peak was found in all the $AZO:H_2$ thin films. The lowest resistivity and the best transmittance at a wavelength of 470 nm was found to be $4.774\;{\times}\;10^{-4}\;{\Omega}cm$ and 92% at a substrate temperature of $500^{\circ}C$, working pressure of 7 mTorr and annealing temperature of $400^{\circ}C$. The transmittance of the $AZO:H_2$ thin film for the Blue GaN LED was improved by approximately 13% relative to that of a ITO thin film (T = 79%).