• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.410-411
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• 2007

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• 한국해양환경ㆍ에너지학회지
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• 제10권2호
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• pp.93-101
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• 2007

오염된 연안 저서환경의 생물학적 정화를 목적으로 발광 다이오드(LED)를 이용하여 저서미세조류 Nitzschia sp.(일본 Hakozaki만에서 분리)의 성장에 미치는 광량과 파장의 영향을 조사하였다. Nitzschia sp.는 청색 LED(450 nm), 황색 LED(590 nm), 적색 LED(650 nm) 및 형광램프(복수파장)에서 배양하였다. 온도 $25^{\circ}C$ 그리고 염분 30 psu에서 배양한 Nitzschia sp.는 청색파장에서 $20\;{\mu}mol\;m^{-2}\;s^{-1}$ 그리고 형광램프는 $40\;{\mu}mol\;m^{-2}\;s^{-1}$에서 최대 상대성장속도를 보였으나, 이보다 높은 광량에서는 광 저해현상이 나타났다. 하지만, 황색 파장과 적색 파장의 최대광량에서 ($350\;{\mu}mol\;m^{-2}\;s^{-1}$) 광 저해현상은 관찰되지 않았다. 광량-성장곡선에서 청색 LED는 ${\mu}=-0.46{\exp}(1-I/6.32)+0.46-0.00043I,\;(r^2=0.98)$, 황색 LED는 ${\mu}=0.42(I+7.87)/(I+58.9),\;(r^2=0.99)$, 적색 LED는 ${\mu}=0.39(I+3.39)/(I+21.6),\;(r^2=0.94)$ 그리고 형광램프는 ${\mu}=-0.38{\exp}(1-I/7.23)+0.38-0.00016I,\;(r^2=0.96)$로 나타났다. 청색 LED, 황색 LED, 적색 LED와 형광램프의 최대성장률은 각각 $0.44\;day^{-1},\;0.42\;day^{-1},\;0.39\;day^{-1}$ 그리고 $0.37\;day^{-1}$이었다. Nitzschia sp.의 최대흡수계수는 472 nm($0.0224\;m^2\;mg\;chi.\;{\alpha}^{-1}$)와 663 nm($0.0179\;m^2\;mg\;chi.\;{\alpha}^{-1}$)에서 보였지만, 모든 파장에서(400 nm-700 nm) 거의 유사한 흡수계수를 보였다. 따라서 가을과 겨울동안에는 청색파장을 조사하여 미세조류 성장을 촉진시키고, 봄과 여름동안에는 황색파장을 조사하여 유해조류의 성장억제와 함께 저서미세조류의 성장시켜 오염된 연안 저서환경 개선에 도움을 줄 수 있을 것으로 생각된다.

• 한국결정성장학회지
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• 제17권5호
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• pp.204-209
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• 2007

형광체-변환 3파장 백색 발광 다이오드(LED)의 응용을 위하여 일련의 $CaS_{1-x}Se_x:Eu$ 형광체를 합성하였다. $CaS_{1-x}Se_x:Eu$의 구조와 발광 특성을 조사하였다. $CaS_{1-x}Se_x:Eu$ 형광체는 청색 발광 다이오드의 발광 파장인 455nm에서 강한 흡수가 있다. $Eu^{2+}$의 $4f^65d^1(T_{2g}){\rightarrow}4f^7(^8S_{7/2})$ 전이 때문에 CaS:Eu는 651nm에서 적색 발광 봉우리를 가지고 있다. $CaS_{1-x}Se_x:Eu$의 발광 봉우리는 Se이 증가함에 따라서 651nm에서 598nm으로 이동이 된다. $CaS_{1-x}Se_x:Eu$ 형광체는 청색 LED로 여기하면 가변 파장의 적색 발광을 하는 형광체로 사용될 수 있다. $SrGa_2S_4:Eu$와 $CaS_{0.50}Se_{0.50}:Eu$ 형광체를 청색 발광 다이오드에 도포하여 백색 발광 다이오드를 제작하였다.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.51-56
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• 2019

LuAG:Ce(Lu₃Al₅O₁₂:Ce³⁺) nano phosphor were synthesized by applying the coprecipitation method. It is used to increase the color rendering of phosphor ceramic plate for high power LEDs and laser lighting. Internal quantum efficiency and absorption of LuAG:Ce nano phosphor are 51.5 % and 64.4 %, respectively, which is higher than the previously studied nano phosphors. The maximum absorption wavelength of this phosphor is 450 nm blue light, and the emission wavelength is 510 nm. The emission wavelength shifted to longer wavelength when the concentration of Ce increased in the heat treatment of the reducing atmosphere. Thermal quenching of LuAG nano phosphor was 70 % at 200 ℃, it was explained by their significant quenching of all raman scattering modes, implying the restriction of electron-phonon couplings caused by their defects.

• 산업경영시스템학회지
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• 제46권3호
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• pp.59-68
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• 2023

Currently, yellow phosphor of Y3Al5O12:Ce3+ (YAG:Ce) fluorescent material is applied to a 450~480nm blue LED light source to implement a white LED device and it has a simple structure, can obtain sufficient luminance, and is economical. However, in this method, in terms of spectrum analysis, it is difficult to mass-produce white LEDs having the same color coordinates due to color separation cause by the wide wavelength gap between blue and yellow band. There is a disadvantage that it is difficult to control optical properties such as color stability and color rendering. In addition, this method does not emit purple light in the range of 380 to 420nm, so it is white without purple color that can not implement the spectrum of the entire visible light spectrum as like sunlight. Because of this, it is difficult to implement a color rendering index(CRI) of 90 or higher, and natural light characteristics such as sunlight can not be expected. For this, need for a method of implementing sunlight with one LED by using a method of combining phosphors with one light source, rather than a method of combining red, blue, and yellow LEDs. Using this method, the characteristics of an artificial sunlight LED device with a spectrum similar to that of sunlight were demonstrated by implementing LED devices of various color temperatures with high color rendering by injecting phosphors into a 405nm deep blue LED light source. In order to find the spectrum closest to sunlight, different combinations of phosphors were repeatedly fabricated and tested. In addition, reliability and mass productivity were verified through temperature and humidity tests and ink penetration tests.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.284-284
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• 2009

The LED of cultivation edible plants was compliance the variable of the photo-receptor pigment with the red light source and ultra red light source from long wave region. The mechanism of cultivation edible plants for each part was necessary the wavelength unit which is appropriate, the illuminant source, motor control and lens design of LED light source about plant. The photo-receptor pigment induces for a long daytime recognition, seed germination and anthesis etc, induction years exists in the state which is an inactivity within the cells and in compliance with the red light source to be converted in active

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 동계학술발표회 논문집
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• pp.509-510
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• 2009

The optical gain of InGaN/GaN multi quantum well (MQW) resonant-cavity light-emitting diode (RC-LED) with different Indium composition and well width in the multi-quantum well was investigated. The optimized optical gain was obtained by simulating active region InGaN/GaN with some test values of well width and Indium composition. By simulation tool, we could simulate on several cases, and then we got exact well width and Indium composition that makes optical gain maximum due to the short wavelength of 470 nm for blue light emission.

• 전자공학회논문지D
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• 제35D권8호
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• pp.24-30
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• 1998

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

• 보존과학회지
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• 제36권4호
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• pp.236-243
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• 2020

In this study, an accelerated aging experiment for fabric and paper was conducted using two light emitting diode(LED) sources with different wavelength characteristics, and the discoloration under each lighting type was examined. Hanji(Korean traditional paper) and related textiles showed more discoloration under blue LEDs, while the blue wool standard showed more discoloration under white LEDs. This, indicated that the deterioration varied depending on the sample color. The the effect of the light source on artifact deterioration was primarily related to the total radiation flux(expressed in mill watts), rather than the total luminous flux(expressed in lumens). In addition, the discoloration of the investigated artifacts was dependent on the color rendering of the lighting.

• 한국광물학회지
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• 제28권1호
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• pp.29-38
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• 2015

광석에서 순도 높은 금은을 추출하기 위해 사용된 청화법으로부터 시안이 유출되어 광석 내 존재하는 중금속들과 결합하여 다양한 형태의 시안화합물이 생성된다. 이러한 시안화합물은 난분해성 오염물질로서 인간을 포함한 생태계에 악영향을 끼친다. 결합력에 따라서 중금속과 결합한 시안화합물은 공유결합성 화합물(weak acid dissociable, WAD)과 착화합물(strong acid dissociable, SAD) 등으로 분류할 수 있다. 본 연구에서는 시안화합물의 존재 형태별 광촉매 산화 효율을 비교 평가하였다. 특히 자외선 LED 광원의 파장과 광촉매 표면 개질이 시안화합물의 분해에 미치는 영향을 살펴보았다. 실험 결과, 동일한 광촉매 산화 조건에서 자유 시안보다는 중금속과 결합한 시안화합물의 광산화 분해 효율이 떨어짐을 알 수 있었다. 그리고 자유 시안의 경우에는 짧은 파장에서 광촉매 산화가 효과적이었지만 중금속과 결합한 시안화합물의 경우에는 긴 파장에서 광산화 분해능이 더 높게 나타났다. 그리고 광촉매 표면 개질에 의하여 광촉매 산화 공정의 성능을 향상시킬 수 있음을 확인하였다.