• 한국안전학회지
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• 제27권6호
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• pp.26-30
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• 2012

It is difficult to determine the junction temperature because LED lightings are manufactured using several chips with low power. This paper reports on the finite element method of the determination of junction temperature in the GaN-based LEDs. The calculated junction temperature of the LED chip using FEM was compared with the experimentally measured data. As the results of this study, the junction temperature of LED chips with via holes is lower than that of LED chips without via hole. Therefore, the research of via hole is necessary to decrease junction temperature of LED chips.

• 산업기술연구
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• 제29권B호
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• pp.187-191
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• 2009

Recently, we have used LEDs to illumination because it has a high luminous efficiency and prolong lifespan. However the light power and lifetime is reduced by junction temperature increment of LED. So it is important to measure the junction temperature accurately. In case of using a electrical method measuring junction temperature of LED. Temperature measurement errors are spontaneously generated because of a parasitic capacitances in LED. In this paper, we proposed a method that reducing LED's parasitic capacitance effects for electrical measurement. It was demonstrated by the experimental result that is more correct than established method.

• 산업기술연구
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• 제30권A호
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• pp.83-88
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• 2010

Recently, the LED lighting is widely used to illumination purpose due to its high luminous efficiency and the long life time. However, the light power and lifetime is reduced by junction temperature increment of LED. So it is important to measure the junction temperature accurately. In this paper, we proposed a new design and implementation method of high power LED junction temperature measurement circuit. The proposed circuit has two current sources which are a driving current source and a measurement is verified by experiment, and the result shows that the proposed circuit is appropriate to practical use.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.973-977
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• 2010

The temperature of junction in LED affects the life time and performance. however, the measurement of junction temperature in module is very difficult. In this paper, to measure the junction temperature in LED module, optical and electrical properties is measured in single package in temperature from 25 [$^{\circ}C$] to 85 [$^{\circ}C$], and then junction temperature can is estimated in module with measuring the average voltage of single package. As results, the junction temperature of single package is measured the temperature of 61.2 [$^{\circ}C$] in ambient temperature, also, the junction temperature of LED module is measured the temperature of 72.5 [$^{\circ}C$] in ambient temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.410-411
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• 2007

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• 조명전기설비학회논문지
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• 제26권2호
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• pp.1-7
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• 2012

LED package with 4[mm]-height mold was manufactured and the surface temperature was measured directly using both thermocouple and thermal infrared (IR) camera. FVM simulation was conducted to estimate the surface temperature of the same LED package under the same condition, by which the accuracy of the simulation was secured. Then, the effects of the height and thermal conductivity of the mold on the junction temperature of the LED package were investigated by FVM simulation. The results showed that the junction temperature decreased by 10[$^{\circ}C$] when the mold height was 3~5[mm], but the thermal conductivity of the mold didn't affect the junction temperature significantly.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.594-599
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• 2014

The heat dissipation conditions of high-power 5 watt LEDs-based searchlight modules were optimized with varying LED bar'shape, materials, and ambient temperature. The LED junction temperature was estimated by using Computational Fluid Dynamics simulation. The optimal heat dissipation conditions were found as follows; LED bar' shape: L=80 mm, W=4 mm, t=10 mm, copper material, LED junction temperature of $116.6^{\circ}C$, ambient temperature of $50^{\circ}C$, total mass of 184 g, and shadowing area of $320mm^2$. The difference between the junction temperatures of our fabricated and simulated LEDs-based searchlight modules is about $3^{\circ}C$, which confirms the validity of our thermal simulation results.

• 조명전기설비학회논문지
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• 제25권12호
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• pp.34-41
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• 2011

In order to understand the thermal performance of each LED chips in multi-chip LED package, a quantitative parametric analysis of the temperature evolution was investigated by thermal transient analysis. TSP (Temperature Sensitive Parameter) value was measured and the junction temperature was predicted. Thermal resistance between the p-n junction and the ambient was obtained from the structure function with the junction temperature evolution during the cooling period of LED. The results showed that, the thermal resistance of the each LED chips in 4 chip-LED package was higher than that of single chip- LED package.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.55-56
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• 2007

The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Using the ampoule-tube to fabricate the p-type ZnO will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• 방송공학회논문지
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• 제21권5호
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• pp.816-823
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• 2016

본 논문은 디스플레이 휘도를 증가시키기 위하여 적색, 녹색, 청색 고휘도 Light Emitting Diode(LED)를 광원으로 사용하고, Digital Micro Device(DMD) 패널을 적용한 헤드업 디스플레이에서 세 개의 LED 광원 합성 비율과 합성에 따른 양자화 노이즈를 최소화시키는 LED 합성 비율을 연구하였고, 밝기에 영향을 미치는 녹색 LED 구동 비율과 접합 온도에 대하여 분석하였다. 이를 통하여 39%의 LED 중첩 방법을 통하여 황색과 청록색의 2차원 색을 합성하여 33.3%의 휘도 증대 효과를 얻을 수 있었다. 또한 양자화노이즈를 억제하고 영상 화질 측면에서 우수한 색정밀도를 얻을 수 있었다.