• 전기학회논문지P
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• 제64권4호
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• pp.303-307
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• 2015

The effects of additive such as $H_2O_2$ in KOH electrolyte solution for the Aluminum/Air fuel cell were investigated with regard to electric power characteristics. The power generated by a Al/Air fuel cell was controlled by the KOH electrolyte solution and $H_2O_2$ depolarizer. Higher cell power was achieved when higher KOH electrolyte concentration and higher $H_2O_2$ depolarizer amount. The maximum power was increased by the increase amount $H_2O_2$ depolarizer, it was found that $H_2O_2$ depolarizer inhibits the generation of hydrogen and the polarization effect was reduced as a result. Internal resistance analysis was employed to elucidate the maximum power variation. Higher internal resistance created internal potential differences that drive current dissipating energy. In order to improve the output characteristics of the Al/Air fuel cell, it is thought to be desirable to increase the KOH electrolyte concentration and increase the $H_2O_2$ addition amounts.

• Corrosion Science and Technology
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• 제10권2호
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• pp.71-75
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• 2011

Corrosion properties of Al-0.3Ga-0.3Sn, Al-0.3Mn-0.3Ga, and Al-0.3Mn-0.3Sn alloys were examined to develop an anode material for Al-air battery with alkaline aqueous or ethanol electrolyte. The results of potentiodynamic polarization tests showed that the electrode potential of the Al alloys were lower than the pure Al, implying the cell voltage can be increased by using one of these alloys for an anode in 4 M KOH aqueous solution. The corrosion rate appeared to be increased by alloying Ga but to be reduced by Sn and Mn in the aqueous solution. The ethanol solution is expected to improve the cell performance in that the electrode potential and the corrosion rate of Al were lower in ethanol solution than in aqueous solution. However the Al-(Ga, Sn, Mn) alloys are not favorable in ethanol solution because of the high potential and corrosion rate.

• 한국결정성장학회지
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• 제7권3호
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• pp.449-455
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• 1997

KOH 용액을 이용한 단결정 실리콘의 이방성 식각 특성을 조사하였다. n형 (100) 단결정 실리콘 웨이퍼를 시료로 사용하였으며, 식각 비율이 월등히 작은 $SiO_2$층을 실리콘 식각의 마스크로 사용하였다. 실리콘의 식각속도와 식각상태는 KOH 용액의 농도와 온도조건 뿐만 아니라 용액의 균일도, 용액의 교반속도와 교반방향 등에 따라 큰 차이가 발생하였다. 실리콘의 식각 속도는 KOH 농도가 낮아질수록 증가하며, 온도는 높아질수록 증가하는 경향을 보였으며, 20 wt%~50 wt%의 농도 범위와 $50^{\circ}C~105^{\circ}C$의 온도 범위에서 식각속도는 $10\mu \textrm{m}/hr~250\mu\textrm{m}/hr$로서 큰 폭으로 변화하였다. 식각된 표면의 거칠기중 hillock의 발생은 (100)면과 (111)면의 식각 속도 비율이 커질수록 증가함을 알 수 있었다.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.67-68
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• 2002

The properties and mechanism of silicon protuberance and groove processing by diamond tip sliding using atomic force microscope (AFM) in atmosphere were studied. To control the height of protuberance and the depth of groove, the processed height and depth depended on load and diamond tip radius were evaluated. Nanoprotuberances and grooves were fabricated on a silicon surface by approximately 100-nm-radius diamond tip sliding using an atomic force microscope in atmosphere. To clarify the mechanical and chemical properties of these parts processed, changes in the protuberance and groove profiles due to additional diamond tip sliding and potassium hydroxide (KOH) solution etching were evaluated. Processed protuberances were negligibly removed, and processed grooves were easily removed by additional diamond tip sliding. The KOH solution selectively etched the unprocessed silicon area. while the protuberances, grooves and flat surfaces processed by diamond tip sliding were negligibly etched. Three-dimensional nanofabrication is performed in this study by utilizing these mechanic-chemically processed parts as protective etching mask for KOH solution etching.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.156-161
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• 2011

The present study introduces a novel wet etching technique for nanostructure fabrications which usually requires low surface roughness. Using the current method, acquired profiles were smooth even in the nanoscale, which cannot be easily achieved with conventional wet or dry etching methods. As one of the most popular single crystal silicon etchant, potassium hydroxide (KOH) solution was used as a base solvent and two additives, antimony trioxide (Sb2O3) and ethyl alcohol were employed in. Four experimental parameters, concentrations of KOH, Sb2O3, and ethyl alcohol and temperature were optimized at 60 wt.%, 0.003 wt.%, 10 v/v%, and $23^{\circ}C$, respectively. Effects of additives in KOH solution were investigated on the profiles in both (110) and (111) planes of single crystal silicon wafer. The preliminary results show that additives play a critical role to decrease etch rate significantly down to ~2 nm/min resulting in smooth side wall profiles on (111) plane and enhanced surface roughness.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.133-133
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• 2002

• 반도체디스플레이기술학회지
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• 제2권4호
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• pp.37-40
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• 2003

반도체 장비의 기능성과 신뢰성을 높이기 위하여 부품의 제조기술은 점차 마이크로 머신 기술을 요구하고 있다. 마이크로머신 기술 중 hot junction이 위치하는 멤브레인 구조는 각종 센서와 히터의 미세부품에서 가장 이용도가 큰 구조이다. 실험에서는 마이크로머신의 기본 구조인 멤브레인 형태를 만들기 위해 KOH 용액과 TMAH 용액으로 단결정 실리콘을 이방성 습식식각 하였다. 실험결과, 식각액의 온도와 농도, 마스크 패턴과 웨이퍼의 결정성의 일치 등을 고려해야 하며, 식각 속도는 KOH 농도 및 온도에 따라 크게 변함을 알 수 있었다. KOH 용액은 30 wt% 80~$90^{\circ}C$ 온도 범위에서 가장 좋은 특성을 나타냈다. 한편, TMAH용액이 실리콘을 식각하는 용액으로 관심을 끄는 것은 단결정에서 상대적으로 $SiO_2$ 박막을 마스크로 사용할 수 있을 뿐 아니라 $SiO_2$ 박막을 마스크로 사용할 수 있을 뿐 아니라 다른 식각액보다 찌꺼기가 적다는 장점 때문이다. 그러나, 다른 용액에 비해 가격이 고가이며 식각 속도가 낮다는 것이 실용적인 측면에서 큰 단점이다. 실험결과를 종합적으로 고려할 때 KOH 용액 농도 30wt%와 온도 $90^{\circ}C$가 마이크로머신 기술에 의한 멤브레인 구조 제작에서 적합한 공정조건이라고 할 수 있다.

• 한국결정학회지
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• 제8권2호
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• pp.97-104
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• 1997

수열합성법에 의한 Pb(TixZr1-x)O3분말 합성에 대하여 연구하였다. 합성원료로는 Lead-acetate trihydrate와 Titanium isoproprxide, Zirconium propoxide를 isopropanol로 희석시킨후 가수분해 시켜 얻은 Ti/Zr 젤을 사용하였고, 광화제로서 KOH(0.5m, 1m, 2m)를 사용하였으며 140℃, 150℃, 160℃의 반응온도에서 합성하였다. 합성된 Pb(TixZr1-x)O3분말은 입방체의 형태를 띄고 있었으며 응집된 형태로 나타났다. 1m과 2m의 KOH에서는 PZT 합성이 잘 이루어졌으며 1m의 경우 8시간, 2m의 경우 1시간 이상의 반응이 필요하였고 0.5m KOH에선 5일의 반응시간에도 순수한 PZT분말만이 합성되지 않았다. 낮은 반응온도와 짧은 반응시간의 실험조건에선 합성된 분말이 대부분 PZT분말이었으나 미반응 Ti/Zr 젤이 상당량 존재하였다. 합성된 PZT분말의 크기는 KOH농의 증가에 따라 증가하였다. 중간생성물로서 PbO고용체가 생성되었으며 이는 Ti고용량이 10% 정도의 큰것과 3%정도의 작은 것으로 크게 나눌 수 있었다.

• 한국수소및신에너지학회논문집
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• 제27권4호
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• pp.372-377
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• 2016

The carbon felt used as the electrode of vanadium redox flow battery (VRFB) requires imprived electrochemical activity for better battery performance and efficiencies. Many efforts have been tried to improve electrochemical activity of the carbon felt as electrodes. In this study the alkali solution, KOH, is applied on surface treatment of the carbon felt electrode. The carbon felts were treated with KOH under room temperature and $80^{\circ}C$. The isopropyl alcohol was applied to improve wettability of the carbon felt during KOH treatment. The KOH treated carbon felt was analyzed by using the X-ray photoelectron spectroscopy (XPS). The XPS analysis of carbon felt electrode revealed on increase in the overall surface oxygen content of the carbon felts after KOH treatment. Also, cyclic voltametry tests showed electrochemical characteristics enhancement of the carbon felt.

• 한국재료학회지
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• 제9권6호
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• pp.622-629
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• 1999

Effects of the fluorination in the $K_2$TiF\ulcorner solution and in-situ KF+ KOH electrolyte on the electrochemical charge-discharge properties of CaNi\ulcorner and the Mg-CaNi\ulcorner electrodes were investigated. In-situ fluorination in the KF+ KOH electrolyte compared with pre-fluorination in the$ K_2$TiF\ulcorner solution could improve the electrochemical cycling durability of CaNi\ulcorner and MG-CaN\ulcorner electrodes. The fluorinated layer on the alloy surface by pre-fluorination to improve the activity and anti-corrosion of the electrodes was dissolved in the pure KOH electrolyte during the cycling. The fluorinated layer was formed continuously on the surface of the electrode by thee2N KF addition in the 6N KOH electrolyte. The excess F\ulcorner ion addition in KOH electrolyte could improve the electrochemical cycling durability of CaNi\ulcorner and Mg-CaNi\ulcorner electrode. But, in case of MG-CaNi\ulcorner electrode, the discharge capacity of the electrode was reduced and the poor cycling property was shown with increasing of the MG process times.