• Title/Summary/Keyword: K-ToBI

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The study of the $BiO_{6}$ octahedra structure in superconducting $Ba_{0.6}K_{0.4}BiO_3$ single crystal by extended x-ray absorption spectroscopy (EXAFS에 의한 $Ba_{0.6}K_{0.4}BiO_3$ 단결정의 초전도 상태에서 $BiO_{6}$ octahedra 구조의 연구)

  • 김봉준;김영철;김현탁;강광용;이재민
    • Progress in Superconductivity
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    • v.4 no.2
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    • pp.148-152
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    • 2003
  • We have observed the temperature dependences of Bi $L_{III}$ edge spectra by extended X-ray absorption spectroscopy for a high quality single crystal and a powder of the $Ba_{0.6}K_{0.4}BiO_3$ superconductor. $Ba_{0.6}K_{0.4}BiO_3$ has the cubic structure and metallic states. The deformation of the $BiO_{6}$ octahedra, which is due to the anomalies of the Bi-O and Bi-Ba bond length, was showed by the double-shell fit. It was clearly found that these anomalies are owing to the difference in the strength of Bi-O bonds. The temperature dependences of both bond lengths and the Debye-Walter factor ${\sigma}^2$ of the Bi-O and Bi-(Ba,K) bond are discussed to illustrate local structural features of the $Ba_{0.6}K_{0.4}BiO_3$

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Developing Questionnaire of BiJeung(痺證) which is similar to Arthralgia and Paresthesia Syndrome (비증 설문문항 개발)

  • Ahn, Ji Hoon;Lee, Sun-Ho;Park, Young-Jae;Park, Young-Bae
    • The Journal of Korean Medicine
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    • v.34 no.3
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    • pp.96-105
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    • 2013
  • Objectives: Bi Jeung (비증) is a pain syndrome derivative of pathological patterns of East Asian medicine. The purpose of this study was to develop a self-rated questionnaire for Bi Jeung. Methods: Twelve questionnaire items for Bi Jeung (3 items for the Wind Bi, 5 items for the Cold Bi, and 4 items for the Dampness Bi) were extracted through the literature review. These items were presented to the 18 Korean medical doctors who specialized in pain medicine to conduct two sessions of the Delphi method. The Korean medical doctors were asked to rate the importance of each item for the corresponding Bi syndromes, using a Likert 7-point scale, and were asked to propose which item should be additionally included to increase determinant power to each Bi syndrome. We determined the 4 points of the importance as a cut-off point of each item. Results: Through two sessions of the Delphi method, two items were deleted because their mean values of the importance were below 4 point. Korean medical doctors proposed to add three items for the Bi Jeung. However, the mean values of only two among the three items were over 4 points, so finally 12 items (3 items for the Wind Bi, 5 items for the Cold Bi, and 4 items for the Damp Bi) were determined for the Bi Jeung questionnaire. Conclusions: It is concluded that a 12 item-Bi Jeung questionnaire comprising the three subcategories of the Bi Jeung (Wind, Cold, and Dampness Bis) possesses contents validity through literature review and Delphi methods.

Technique development of Bi-2212/2223 superconductor thick film manufacturing by plasma spraying and heat treatment (플라즈마 용사 및 열처리 공정을 통한 Bi-2212/2223 초전도체 thick film 제조의 기술 개발)

  • Lee, Seon-Hong;Cho, Sang-Hum;Ko, Young-Bong;Park, Kyeung-Chae
    • Proceedings of the KWS Conference
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    • 2005.11a
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    • pp.262-264
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    • 2005
  • $Bi_{2}Sr_{2}CaCu_{2}O_{x}$(Bi-2212) and $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{y}$(Bi-2223) high-$T_{c}$ superconductor(HTS) coating have been prepared by plasma spraying and heaat treatment. The Bi-2212 HTS coating later is synthesized through the peritectic reaction between Sr-Ca-Cu oxide coating layer and Bi-Cu oxide coating later, and $Bi_{2}Sr_{2}CaCu_{2}O_{y}$(Bi-2212) superconducting phase grow by partial melting process. The superconducting characteristic depends strongly on the conditions of the partial melting process. the Bi-2212 HTS layer consists of the whiskers grown in the diffusion direction. Above the 2212 layer, Bi-2223 phase and secondary phase was observed. The secondary phase is distributed uniformly over the whole surface. This is caused to the microcrack on the coatings surface. Despite everything, the film shows superconducting with an onset $T_{c}$ of about 115K. There are two changes steps. One changes (1step) at 115K is due to the diamagnetism of the Bi-2223 phase and the other changes (2step) at 78K is due to the diamagnetism of the Bi-2212 phase.

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A Comparative Study on Intonation between Korean, French and English: a ToBI approach

  • Lee, Jung-Won
    • Speech Sciences
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    • v.9 no.1
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    • pp.89-110
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    • 2002
  • Intonation is very difficult to describe and it is furthermore difficult to compare intonation between different languages because of their differences of intonation systems. This paper aims to compare some intonation phenomena between Korean, French and English. In this paper I will refer to ToBI (the Tone and Break Indices) which is a prosodic transcription model proposed originally by Pierrehumbert (1980) as a description tool. In the first part, I will summarize different ToBI systems, namely, K-ToBI (Korean ToBI), F-ToBI (French ToBI) and ToBI itself (English ToBI) in order to compare the differences of three languages within prosody. In the second part, I will analyze some tokens registered by Korean, French and American in different languages to show the difficulties of learning other languages and to find the prosodic cues to pronounce correctly other languages. The point of comparison in this study is the Accentual Phrase (AP) in Korean and in French and the intermediate phrase (ip) in English, which I will call ' subject phrase ' in this study for convenience.

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Synthesis and Characterization of 1-D BiSI and 2-D BiOI Nanostructures

  • Lee, Juheon;Min, Bong-Ki;Cho, Insu;Sohn, Youngku
    • Bulletin of the Korean Chemical Society
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    • v.34 no.3
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    • pp.773-776
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    • 2013
  • We have prepared 1-D BiSI and 2-D BiOI nanostructures, and characterized them by scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffraction crystallography, thermogravimetric analysis/differential scanning calorimetry, and UV-visible absorption. Here, we first report clear HR-TEM image of BiSI. In addition, we first found that the growth direction of BiSI is [12-1] plane, with the neighboring distance of 0.30 nm. The crystal structures of BiSI and BiOI are found to be orthorhombic (Pnam) and tetragonal (P4/nmm), respectively. The absorption band gaps of BiSI and BiOI are measured to be 1.55 and 1.92 eV, respectively. Our study could further highlight the applications of V-VI-VII compounds.

Chemical Reactions in Surfactant Solution (I). Substituent Effects of 2-Alkylbenzimidazolide ions on Dephosphorylation in CTABr Solutions (계면활성제 용액속에서의 화학반응 (제1보). 미셀용액속에서의 탈인산화 반응에 미치는 2-알킬벤즈이미다졸음이온들의 치환기효과)

  • Young-Seuk Hong;Chan-Sik Park;Jung-Bae Kim
    • Journal of the Korean Chemical Society
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    • v.29 no.5
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    • pp.522-532
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    • 1985
  • The reactions of p-nitrophenyldiphenylphosphate (p-NPDPP) with anions of benzimidazole (BI) and its 2-alkyl derivatives (R-BI) are strongly catalyzed by the micelles of cetyltrimethyl ammonium bromide (CTABr). On the other hand, the first order rate constants $(k'_{R-BI^-})$ and the second order rate constants $(k_{m(R-BI^-)})$ of the reactions mediated by R-$BI^-$in the micellar pseudophase are much smaller than those mediated by $BI^-$. In order to explain the slower rates of the micellar reactions mediated by R-$BI^-$, we compared the concentration-ratios ([R-$BI^-$]/[$BI^-$]) with the first order rate constant-ratios $(k'_{R-BI^-}/k'_{BI^-})$ and the second order constant-ratios $(k_{m(R-BI^-)}/k_{m(BI^-)})$ for the reactions taking place in the micellar pseudophase. The rate constant-ratios were much smaller than the concentration-ratios. For example in a 5 ${\times}10^{-4}$M butyl-BI solution, the two ratios were 0.089 and 0.430 (for the first order) respectively, and in a $10^{-4}$M butyl-BI solution the former was 0.100 (for the second order). This predicts that the reactivities of R-$BI^-$ in the micellar pseudophase are much smaller than that of $BI^-$. Based on the values of several kinetic parameters measured for dephosphorylation of p-NPDPP mediated by R-$BI^-$, a schemetic model is proposed. Due to the hydrophobicity and the steric effect of the alkyl substituents, these groups would penetrate into the core of the micelle for stabilization by van der Waals interaction with long cetyl groups of CTABr. Consequently, the movements of R-$BI^-$ bound to the micelle should be restricted, leading to decreased collison frequencies between the nucleophiles and p-NPDPP. We refer this as an "anchor effect". This effect became more predominent when a larger alky group in R-BI was employed and when a greater concentration of R-BI was used.

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Band-Gap Energy and Thermoelectric Properties of 90% $Bi_2Te_3-10% Bi_2Se_3$ Single Crystals (90% $Bi_2Te_3-10% Bi_2Se_3$ 단결정의 밴드갭 에너지와 열전특성)

  • Ha, Heon-Pil;Hyeon, Do-Bin;Hwang, Jong-Seung;O, Tae-Seong
    • Korean Journal of Materials Research
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    • v.9 no.4
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    • pp.349-354
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    • 1999
  • The temperature dependences of the Hall coefficient, carrier mobility, electrical resistivity, Seebeck coefficient, thermal conductivity, and figure-of-merit of the undoped and $CdI_2$-doped 90% $Bi_2Te_3-10% Bi_2Se_3$, single crystals, grown by the Bridgman method, have been characterized at temperatures ranging from 77K to 600K. The saturated carrier concentration and degenerate temperature of the undoped 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal are $5.85\times10_{18}cm^{-3}$ and 127K, respectively. The scattering parameter of the 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal is determined to b -0.23, and the electron mobility to hole mobility ratio ($\mu_e/\mu_h)$ is 1.45. The bandgap energy at 0K of the 90% <$Bi_2Te_3-10% Bi_2Se_3$ single crystal is 0.200 eV. Adding $CdI_2$as a donor dopant, a maximum figure-of-merit of $3.2\times10^{-3}/K$$CdI_2$-doped specimen.

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A Nucleotide Exchange Factor, BAP, dissociated Protein-Molecular Chaperone Complex in vitro (In vitro에서 핵산치환인자 BAP이 단백질-분자 샤페론 복합체 해리에 미치는 영향)

  • Lee Myoung-Joo;Kim Dong-Eun;Lee Tae-Ho;Jeong Yong-Kee;Kim Young-Hee;Chung Kyung-Tae
    • Journal of Life Science
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    • v.16 no.3 s.76
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    • pp.409-414
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    • 2006
  • Molecular chaperones and folding enzymes in the endoplasmic reticulum (ER) associate with the newly synthesized proteins to prevent their aggregation and help them fold and assemble correctly. Chaperone function of BiP, which is a Hsp70 homologue in ER, is controlled by the N-terminal ATPase domain. The ATPase activity of the ATPase domain is affected by regulatory factors. BAP was identified as a nucleotide exchange factor of BiP (Grp78), which exchanges ADP with ATP in the ATPase domain of BiP This study presents whether BAP can influence folding of a protein, immunoglobulin heavy chain that is bound to BiP tightly. We first examined which nucleotide of ADP and ATP affects on BAP binding to BiP The data showed that endogenous BAP of HEK293 cells prefers ADP for binding to BiP in vitro, suggesting that BAP first releases ADP from the ATPase domain in order to exchange with ATP. Immunoglobulin heavy chain, an unfolded protein substrate, was released from BiP in the presence of BAP but not in the presence of ERdj3, which is another regulatory factor for BiP accelerating the rate of ATP hydrolysis of BiP The ADP-releasing function of BAP was, therefore, believed to be responsible for immunoglobulin heavy chain release from BiP. Grp170, another Hsp70 homologue in ER, did not co-precipited with BAP from $[^{35}S]$-metabolic labeled HEK293 lysate containing both overexpressed Grp170 and BAP. These data suggested that BAP has no specificity to Grp170 although the ATPase domains of Grp170 and BiP are homologous each other.

Structural Characterization of Bismuth Zinc Oxide Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy (플라즈마분자선에피탁시법으로 성장한 산화비스무스아연 박막의 구조특성)

  • Lim, Dong-Seok;Shin, Eun-Jung;Lim, Se-Hwan;Han, Seok-Kyu;Lee, Hyo-Sung;Hong, Soon-Ku;Joeng, Myoung-Ho;Lee, Jeong-Yong;Cho, Hyung-Koun;Yao, Takafumi
    • Korean Journal of Materials Research
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    • v.21 no.10
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    • pp.563-567
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    • 2011
  • We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.

Wafer-Level MEMS Capping Process using Electrodeposition of Ni Cap and Debonding with SnBi Solder Layer (Ni 캡의 전기도금 및 SnBi 솔더 Debonding을 이용한 웨이퍼 레벨 MEMS Capping 공정)

  • Choi, J.Y.;Lee, J.H.;Moon, J.T.;Oh, T.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.4
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    • pp.23-28
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    • 2009
  • We investigated the wafer-level MEMS capping process for which cavity formation in Si wafer was not required. Ni caps were formed by electrodeposition on 4" Si wafer and Ni rims of the Ni caps were bonded to the Cu rims of bottom Si wafer by using epoxy. Then, top Si wafer was debonded from the Ni cap structures by using SnBi layer of low melting temperature. As-evaporated SnBi layer was composed of double layers of Bi and Sn due to the large difference in vapor pressures of Bi and Sn. With keeping the as-evaporated SnBi layer at $150^{\circ}C$ for more than 15 sec, SnBi alloy composed of eutectic phase and Bi-rich $\beta$ phase was formed by interdiffusion of Sn and Bi. Debonding between top Si wafer and Ni cap structures was accomplished by melting of the SnBi layer at $150^{\circ}C$.

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