• Journal of Korean Society of Industrial and Systems Engineering
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• v.28 no.3
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• pp.42-57
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• 2005

The National Education Information System(NEIS) has been utilized in primary and secondary schools. In this paper, we consider the NEIS should be used not only for educational administration affairs, but also for a lifelong management of national human resource. The current School Information Management System(SIMS), including the NEIS, is unsatisfactory due to the insufficiency of actual field suitability and end-user's conveniency. To this, we have devised improvements of the SIMS in the seven problem areas: ) The core business process of the school should be analyzed sufficiently and reflected in SIMS. (2) We should fully utilize groupware functions which activate the learning organization. (3) We might apply and use the CRM techniques of enterprises in SIMS. (4) The SIMS should be easy to make necessary school assessment data. (5) We should complement functions of the SIMS for a lifelong healthcare information management of national human resource. (6) The SIMS should support the school lunch management. (7) We should bring BOM and work-flow concepts into the SIMS.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.347-347
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• 2011

Secondary ion mass spectrometry (SIMS) was fascinated by a quantitative analysis and a depth profiling and it was convinced of a in-depth analysis of multi-layer films. Precision determination of the interfaces of multi-layer films is important for conversion from the original SIMS depth profiling to the compositional depth profiling and the investigation of structure of multi-layer films. However, the determining of the interface between two kinds of species of the SIMS depth profile is distorted from original structure by the several effects due to sputtering with energetic ions. In this study, the feasibility of 50 atomic % definition for the determination of interface between two kinds of species in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multi-layer films. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors from Si-Ge and Si-Ti alloy reference films. The atomic compositions of Si-Ge and Si-Ti alloy films determined by Rutherford backscattering spectroscopy (RBS).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.275-275
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• 2012

The relative composition of $Cu(InGa)Se_2$ solar cells is one of the most important measurement issues. However, quantitative analysis of multi-component alloy films is difficult by surface analysis methods due to severe matrix effect. In this study, quantitative depth profiling analysis of CIGS films was investigated by secondary ion mass spectrometry (SIMS). The compositions were measured by SIMS using the alloy reference relative sensitivity factors derived from the certified compositions and the total counting numbers of each element. The compositions measured by SIMS were linearly proportional to those by inductively coupled plasma-mass spectrometry (ICP-MS) using isotope dilution method. In this study, the quantification measured by ICP-MS method is compared with the composition calculated by SIMS depth profiles with AR-RSFs obtained from the reference. The SIMS depth profile of CIGS thin films according to the manufacturing condition was converted into compositional depth profile.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.274-274
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• 2012

In-depth analysis by secondary ion mass spectrometry (SIMS) is very important for the development of electronic devices using multilayered structures, because the quantity and depth distribution of some elements are critical for the electronic properties. Correct determination of the interface locations is critical for the calibration of the depth scale in SIMS depth profiling analysis of multilayer films. However, the interface locations are distorted from real ones by the several effects due to sputtering with energetic ions. In this study, the determination of interface locations in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multilayer systems. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors (RSF) derived from the atomic compositions of Si-Ge and Si-Ti alloy reference films determined by Rutherford backscattering spectroscopy. The thicknesses of the Si/Ge and Ti/Si multilayer films measured by SIMS depth profiling with various impact energy ion beam were compared with those measured by TEM. There are two methods to determine the interface locations. The one is the feasibility of 50 atomic % definition in SIMS composition depth profiling. And another one is using a distribution of SiGe and SiTi dimer ions. This study showed that the layer thicknesses measured with low energy oxygen and Cs ion beam and, by extension, with method of 50 atomic % definition were well correlated with the real thicknesses determined by TEM.

• Journal of the Korean Solar Energy Society
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• v.34 no.4
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• pp.39-44
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• 2014

The elemental composition of electro-deposited black Cr solar selective coatings before and after heating in air by using secondary ion mass spectrometry (SIMS) was investigated for optical property analysis. In addition, black Cr selective coating exposed by solar radiation for 5 months was compared with heated sample. SIMS investigation shows that $OH^+$ bearing ions were related to a near surface region of CrOH and CrO compound. The optical degradation of this coating after heating at $500^{\circ}C$ reveals that diffusion of the Cu and Ni elements in substrate material, the chemical interactions adjacent to the interface, and the interface width broadening.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.508-509
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• 2006

인터넷 이용자의 편의를 위하여 기업포탈(Enterprise Portal)을 구축하는 사례가 급증하고 있으며, ERP 도입을 통하여 기존의 많은 시스템의 통합을 추진하고 있는 추세로서 송변전지리정보시스템(TGIS)과 변전소 정보관리시스템(SIMS)의 통합 운영은 시스템적인 측면과 업무적인 측면을 모두 고려하여 볼 때 그 효용성은 매우 크다고 할 수 있으며, 송변전이 통합된 자산관리 운영에 다양한 편의성을 제공할 것이다.

• Journal of Conservation Science
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• v.34 no.2
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• pp.129-135
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• 2018

Scientific investigation of cultural heritage can provide important information to understand the context of the object. To know the characteristics of the material is also an essential part of objects management and conservation. However, the identification and characterization of organic dyes used in archaeological and historical textiles are often limited by the restrictions in sampling. To cope with the difficulties, applications of high-performance techniques of surface analysis, such as Time of Flight-Secondary Ion Mass Spectra (TOF-SIMS) could be considered as a non or micro-destructive option. This study aims to examine the applicability of TOF-SIMS analysis to the detection of organic dyes from historical textiles. A group of silk fabrics dyed with vegetable dyes were artificially photo-aged to different degrees and analyzed with TOF-SIMS. Molecular and fragment ions from indigo were successfully detected from the aged samples; however, only some fragment ions were observed from gardenia and safflower dyed fabrics. Further studies with actual historical samples with extended examination scope would be necessary to assess the validity of this technique.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.203-203
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• 1999

Mass spectrometry technique provides the molecular weight distribution, data on the sequence of repeat units, polymer additives, and impurities, and structural information. time-of-Flight secondary Ion Mass Spectrometry (TOF-SIMS) has been used for structural characterization of various polymers1-2. the masses of repeat units and terminal groups and molecular weight distributions of polymers have been determined from their TOF-SIMS spectra. TOF-SMIS provides good sensitivity and structural specificity for high mass ions so that intact oligomers and large polymer fragments are observed. In this study, we investigated the detailed structural information on the oligomers and fragment ions of branched poly(1,3-butylene adipate) and branched poly[di(ethylene glycol) adipate] and the transesterification products of branched polyesters with trifluoroacetic acid or chloro difluoroacetic acid. Branched polyesters were chosen because they are important polymers but difficult to characterize; thus branched polyesters provide challanging test for TOF-SIMS. TOF-SIMS spectra of polyesters are obtained from thin polymer films cast from solution on a silver substrate. A good solvent for a polumer solution disrupts intermolecular forces between polymer chains but leaves the polumer intact. Transesterification reactions are potentially useful for characterization of high molecular weight and intractable polyesters. Transesterification products of polyesters and trifluoroacetic acid or an integral number of polyester repeat units and an additional diol. The progress of such reactions was monitored using peak intensities of reactants and products in TOF-SIMS spectra. The increasing abundance of tagged ions indicates that the reaction has progressed with time.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.94-100
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• 2013

The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

• BMB Reports
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• v.53 no.2
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• pp.74-81
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• 2020

Under physiological and pathological conditions, mechanical forces generated from cells themselves or transmitted from extracellular matrix (ECM) through focal adhesions (FAs) and adherens junctions (AJs) are known to play a significant role in regulating various cell behaviors. Substantial progresses have been made in the field of mechanobiology towards novel methods to understand how cells are able to sense and adapt to these mechanical forces over the years. To address these issues, this review will discuss recent advancements of traction force microscopy (TFM), intracellular force microscopy (IFM), and monolayer stress microscopy (MSM) to measure multiple aspects of cellular forces exerted by cells at cell-ECM and cell-cell junctional intracellular interfaces. We will also highlight how these methods can elucidate the roles of mechanical forces at interfaces of cell-cell/cell-ECM in regulating various cellular functions.