• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.444.2-444.2
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• 2014

Transparent conductors (TCs) are typically applied as an ohmic contact layer for photoelectric devices. Recent researches have illuminated a unique rectifying-junction design between a transparent conductor and a semiconductor layer. This approach may lead a significant reduction of device-fabrication steps and cost. A high-performing heterojunction device is presented, which provided significant photoelectric responses. This covers the fabrication processes, rectifying-junction formations and device analyses.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권1호
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• pp.30-37
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• 2006

In this article, we evaluated the structural merits and the validity of a partially insulated MOSFET (PiFET) through the fabrication of prototype transistors and an 80 nm 512M DDR DRAM with partially-insulated cell array transistors (PiCATs). The PiFETs showed the outstanding short channel effect immunity and off-current characteristics over the conventional MOSFET, resulting from self-induced halo region, self-limiting SID shallow junction, and reduced junction area due to PiOX layer formation. The DRAM with PiCATs also showed excellent data retention time. Thus, the PiFET can be a promising alternative for ultimate scaling of planar MOSFET.

• 전자공학회논문지A
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• 제29A권8호
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• pp.71-77
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• 1992

According to increasing the doping concentration in p-n junction, a tunneling current through trap as well as SRH(Shockley-Read-Hall) generation-recombination current in depletion region occurs. It is the tunneling current that is a dominant current at the forward bias. In this paper, the new tunneling-recombination equation is derived. The thermal generation-recombination current and tunneling current though trap can be easily calculated at the same time because this equation has the same form as the SRH generation-recombination equation. For the validity of this equation, 2 kind of samples are simulated. The one is $n^{+}$-p junction device fabricated with MCT(Mercury Cadmium Telluride, mole fraction=0.29), the other Si n$^{+}-p^{+}$ junction. From the results for MCT $n^{+}$-p junction device and comparing the simulated and expermental I-V characteristics for Si n$^{+}-p^{+}$ junction, it is shown that this equation is a good description for tunneling through trap and thermal generation-recombination current calculation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1148-1151
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• 2009

A self-designed, written in labview, Organic Light-Emitting Diode junction temperature measuring program was used to calculate the internal junction temperature for devices during operation, and an infrared thermometer was used to measure the backside temperature of the device substrate, to discuss the effects of the junction and substrate temperature difference to the characteristics of the device.

• Journal of Electrical Engineering and Technology
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• 제7권5호
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• pp.784-788
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• 2012

In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide ($VO_2$) thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the $VO_2$ film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the $VO_2$ thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.

• 전기전자학회논문지
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• 제11권4호
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• pp.235-238
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• 2007

2차원 소자 시뮬레이터인 TMA 메디치를 이용하여 필드링와 깊은 접합 필드링에 대해 연구하였다. 이온 주입될 위치를 미리 트랜치 식각을 시킴으로써 항복전압 특성을 향상시킬 수 있었다. 시뮬레이션 결과 기존 필드링의 항복전압대비 깊은 접합 필드링 항복전압은 약 30%의 증가를 보였다. 깊은 접합 필드링은 같은 면적을 차지하는 조건하에서 설계 및 제작이 비교적 용이하고, 표면 전하의 영향도 적은 것으로 나타났다. 본 논문에서는 여러 분석을 통해 깊은 접합 필드링의 향상된 특성을 논하였다.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.13-20
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• 2000

In this paper, we demonstrated an analytical description method of forward votage drop and reverse leakage current of the junction barrier controlled schottky rectifier with linearly graded junction and abrupt junction models. In this case, the vertical depths of device are 1[${\mu}{\textrm}{m}$] and 2[${\mu}{\textrm}{m}$], respectively. Through ion implantation and annealing process, we obtain the data of lateral and depth from implanted 2-dimensional profiles. Also we applied these data to models that indicate the change of depletion each on linearly-graded and abrupt juction as the forward and revers bias. After applied depletion changes to electric characteristics of JBS rectifiers, we calculated the forward I-V, the reverse leakage current and temperatures vs. power dissipations according to each junction. When we compared the rectifier with calculated and measured data, from the calculated results, forward votage drop with linearly graded junction is lower than that of abrupt junction and reverse leakage current with linearly graded junction is lower(≒1$\times$10\ulcorner times) than that of abrupt junction. Also, the power dissipations according to different juction depth(1[${\mu}{\textrm}{m}$], 2[${\mu}{\textrm}{m}$]) of device are calculated. Seeing the calculated results, we confirmed it from analytic model that the rectifier with linearly graded junction retained a low power dissipation up to 600[$^{\circ}C$] in comparison with the rectifier with abrupt junction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.389.1-389.1
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• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• Journal of Magnetics
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• 제10권2호
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• pp.66-70
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• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.413-413
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• 2012

Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.