• Title/Summary/Keyword: J-V Characteristics

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Activation energy standardization of White LED Phosphor (White LED 형광체의 활성화 에너지 정형화)

  • Jang, In-Hyeok;Kim, Su-Kyoung;Han, Ji-Hoon;Lee, Chang-Hoon;Lim, Houng-Woo
    • Journal of Applied Reliability
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    • v.13 no.2
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    • pp.117-127
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    • 2013
  • In this paper, we studied the correlation between the activation energy($E_a$) of the raw materials and the structural characteristics of the White LED PKGs. The samples used in the study were composed of low power LED 3type and high power LED 5type. To calculate the activation energy($E_a$) of the White LED PKGs conducted three conditions of high temperature operation test based on the Arrhenius model. The number of samples used in the experiment is 10, respectively. The $T_j$ of Conditions and target specifics expressed $T_{j1}$, $T_{j2}$, $T_{j3}$. The activation energy ($E_a$) of the samples was calculated based on the value of the actually measured lifetime. We investigated the correlation between the activation energy ($E_a$) of the raw materials and the structural characteristics of the White LED PKGs. As a result, White LED PKGs activation energy($E_a$) value was confirmed that the material properties affected more than the structural characteristics of the LED PKGs and we found that activation energy of each LED Model has difference. Normally, The activation energy of phosphor of YAG type was indicated from 0.21 to 0.25[eV] and Silicate type was indicated from 0.12 to 0.16[eV]. According to the results, we confirmed that the activation energy of phosphor of YAG type is higher more than The activation energy of phosphor of Silicate type.

The application of a numerical technique to the current interruption properties of 800kV gas circuit breaker - Characteristics of gas flow (800kV 가스차단기의 차단성능평가를 위한 수치해석 적응 - 유동특성)

  • Choi, Y.K.;Song, K.D.;Park, K.Y.;Shin, Y.J.;Chulkov, V.V.
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1888-1891
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    • 1996
  • Recently, FLIC(Fluid In Cell) method has been widely used for the compressible. flow computation. A program which adopts the FLIC method and can analyze the flow conditions with arc in the interrupter was developed in our team. It was applied to the 800kV class gab circuit breaker for flow conditions with arc, and the results are presented and discussed in this paper.

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Electrical Characteristics of NVM Devices Using SPC Substrate (SPC 기판을 사용한 NVM 소자의 전기적 특성)

  • Hwang, In-Chan;Lee, Jeoung-In;Yi, J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.60-61
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    • 2007
  • In this paper, the p-channel poly Si thin-film transistors (Poly-Si TFT's) using formed by solid phase crystallization (SPC) on glass substrate were fabricated. And we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's to indicate non-volatile memory (NVM) effect. Poly-Si TFT is investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, on/off current ratio. NVM characteristics is showed by measuring the threshold voltage change of TFT through I-V characteristics.

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Study on changes in electrical and switching characteristics of NPT-IGBT devices by fast neutron irradiation

  • Hani Baek;Byung Gun Park;Chaeho Shin;Gwang Min Sun
    • Nuclear Engineering and Technology
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    • v.55 no.9
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    • pp.3334-3341
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    • 2023
  • We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 109 to 1.82 × 1013 n/cm2. Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40%-84.89 ns, showing a faster switching.

A NOTE ON WITT RINGS OF 2-FOLD FULL RINGS

  • Cho, In-Ho;Kim, Jae-Gyeom
    • Bulletin of the Korean Mathematical Society
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    • v.22 no.2
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    • pp.121-126
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    • 1985
  • D.K. Harrison [5] has shown that if R and S are fields of characteristic different from 2, then two Witt rings W(R) and W(S) are isomorphic if and only if W(R)/I(R)$^{3}$ and W(S)/I(S)$^{3}$ are isomorphic where I(R) and I(S) denote the fundamental ideals of W(R) and W(S) respectively. In [1], J.K. Arason and A. Pfister proved a corresponding result when the characteristics of R and S are 2, and, in [9], K.I. Mandelberg proved the result when R and S are commutative semi-local rings having 2 a unit. In this paper, we prove the result when R and S are 2-fold full rings. Throughout this paper, unless otherwise specified, we assume that R is a commutative ring having 2 a unit. A quadratic space (V, B, .phi.) over R is a finitely generated projective R-module V with a symmetric bilinear mapping B: V*V.rarw.R which is nondegenerate (i.e., the natural mapping V.rarw.Ho $m_{R}$ (V, R) induced by B is an isomorphism), and with a quadratic mapping .phi.:V.rarw.R such that B(x,y)=(.phi.(x+y)-.phi.(x)-.phi.(y))/2 and .phi.(rx)= $r^{2}$.phi.(x) for all x, y in V and r in R. We denote the group of multiplicative units of R by U(R). If (V, B, .phi.) is a free rank n quadratic space over R with an orthogonal basis { $x_{1}$, .., $x_{n}$}, we will write < $a_{1}$,.., $a_{n}$> for (V, B, .phi.) where the $a_{i}$=.phi.( $x_{i}$) are in U(R), and denote the space by the table [ $a_{ij}$ ] where $a_{ij}$ =B( $x_{i}$, $x_{j}$). In the case n=2 and B( $x_{1}$, $x_{2}$)=1/2, we reserve the notation [ $a_{11}$, $a_{22}$] for the space.the space.e.e.e.

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An Analysis of Near-infrared Light Curves of δ Scuti Variable BO Lyn (δ Scuti형 변광성 BO Lyn의 근적외선 광도곡선 분석)

  • Lim, Ji-Hye;Sohn, Jungjoo
    • Journal of the Korean earth science society
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    • v.37 no.7
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    • pp.389-397
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    • 2016
  • In order to investigate the light curve difference in visual and infrared wavelength of ${\delta}$ Scuti variable Bo Lyn, observations were performed using BOAO 1.8m reflecting telescope and an infrared detector, KASINICS, with J, H, and Ks filters. Infrared light curves of total 7 nights were obtained between March and April in 2011, and those were compared to the V-filter light curve to examine the differences in period, time of maximum light, amplitude, and shape. From the periodic analysis of infrared light curve, a single frequency of $f_1=10.712cycle/day$, $P=0.09335{\pm}0.00002days$ was obtained, and there was no difference in the period along different wavelengths. In the infrared light curve, a frequency of $2f_1$ was detected. This frequency well explains the asymmetric shape of light curve, one of the characteristics of high-amplitude ${\delta}$ Scuti variables. We compared the locations of the measured infrared maxima and the predicted maxima of V-filter, finding that the times of maxima were delayed about 0.3 phase at infrared wavelengths. Amplitude ratios were adopted to be ${\Delta}J/{\Delta}V=0.328$, ${\Delta}H/{\Delta}V=0.216$, and ${\Delta}Ks/{\Delta}V=0.211$, with the range of variation being smaller at longer wavelengths. It seems that the differences in the times of maxima and amplitude occurred because the changes in brightness of a pulsating variable star are mainly caused by the change in temperature.

Defects and Electrical Properties of ZnO-Bi2O3-Mn3O4-Co3O4 Varistor (ZnO-Bi2O3-Mn3O4-Co3O4 바리스터의 결함과 전기적 특성)

  • Hong, Youn-Woo;Lee, Young-Jin;Kim, Sei-Ki;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.12
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    • pp.961-968
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    • 2012
  • In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

The investigation of As(V) removal mechanism using monosulfate (($Ca_4Al_2O_6(SO_4){\cdot}12H_2O$) and its characteristics (Monosulfate ($Ca_4Al_2O_6(SO_4){\cdot}12H_2O$)의 특성 및 수중 5가 비소 제거기작 규명)

  • Kim, K.B.;Shim, J.H.;Choi, W.H.;Park, J.Y.
    • Journal of Korean Society of Water and Wastewater
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    • v.26 no.1
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    • pp.149-157
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    • 2012
  • Experiments for As(V) removal using synthesized $Ca{\cdot}Al$-monosulfate was performed from the water contaminated with arsenate. Monosulfate is known as LDHs (Layered Double Hydroxides) which is one of the anionic clay minerals. Monosulfate was synthesized mixing $C_3A$ (tricalcium aluminate), gypsum (calcium sulfate), and water with an intercalation method. The product form the synthesis was characterized by FE-SEM, WDXRF, PXRD, and FT-IR. Experiments with different doses of monosulfate were carried out for kinetic. As a result of experiment, the concentration of As(V) was reduced from 0.67 mM to 0.19 mM (0.67mM of monosulfate) and 0.178 mM (1.34 mM of monosulfate). The concentration of sulfate was increased with As(V) decrease. The result of PXRD showed that the d-spacing of inter layer ($d_{003}$ peak) was shifted from 8.927 ${\AA}$ to 8.095 ${\AA}$ because the sulfate in the inter layer of monosulfate was exchanged arsenate with water molecules bonded. From the FT-IR results, a new single band (800 cm-1) was observed after the reaction of monosulfate and As(V). The arsenic removal can be regarded as anion exchange mechanism that is one of the characteristics of LDHs from the results of PXRD and FT-IR analysis.

The mechanical characteristics of 345kV XLPE cable (345kV XLPE 2000$mm^2$ 케이블의 기계적특성 고찰)

  • Nam, S.H.;Baek, J.H.;Heo, H.D.;Lee, S.H.;Kim, C.M.;Lee, S.K.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1688-1690
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    • 2001
  • The mechanical characteristics of XLPE cable is basic to the installation design. Especially, snake and offset design require accurate coefficient of linear expansion($\alpha$), Young's modulus(E) and bending stiffness(El) of the cable. In this paper, $\alpha$, E and El of 345kV XLPE cable was measured by experimental setup, and verified by measuring axial tension and lateral displacement in snake installation.

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V-I characteristics of Bi based HTSC wire (Bi계 고온초전도 선재의 전류 - 전압 특성)

  • 장현만;오상수;하동우;류강식;김상현
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.295-299
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    • 1996
  • In order to investigate the relation between the microstructure and the V-I characteristics of HTSC wire, single and 19 filamentary silver-sheathed Bi2223 tapes were fabricated using the powder-in-tube method. Higher J$\_$c/ at 77.3 K(0 T) and 4.2 K(in magnetic field) can be achieved for the 19 filamentary Bi tape, comparing the single filamentary tape. However, the I$\_$c/ distribution of 19 filamentary Bi2223 tape was found to be wider by analyzing the curve obtained from 2nd differential of V-I data. This was considered to be resulted from worse uniformity of oxide filament due to severe cold working.

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