Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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V-I characteristics of Bi based HTSC wire

Bi계 고온초전도 선재의 전류 - 전압 특성

  • 장현만 (한국전기연구소 초전도응용연구사업팀, 경상대학교 전기공학과) ;
  • 오상수 (한국전기연구소 초전도응용연구사업팀) ;
  • 하동우 (한국전기연구소 초전도응용연구사업팀) ;
  • 류강식 (한국전기연구소 초전도응용연구사업팀) ;
  • 김상현 (경상대학교 전기공학과)
  • Published : 1996.11.01
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Abstract

In order to investigate the relation between the microstructure and the V-I characteristics of HTSC wire, single and 19 filamentary silver-sheathed Bi2223 tapes were fabricated using the powder-in-tube method. Higher J$\_$c/ at 77.3 K(0 T) and 4.2 K(in magnetic field) can be achieved for the 19 filamentary Bi tape, comparing the single filamentary tape. However, the I$\_$c/ distribution of 19 filamentary Bi2223 tape was found to be wider by analyzing the curve obtained from 2nd differential of V-I data. This was considered to be resulted from worse uniformity of oxide filament due to severe cold working.

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