• Proceedings of the KOSOMBE Conference
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• v.1997 no.11
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• pp.484-488
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• 1997

Three-dimensional finite element analyses were used to compare the stress distribution and the stability of the fixation among seven different tibial components and to investigate the effect due to implant materials in total knee arthroplasty. The components included an intact tibia(Type I), Cemented Cobalt-Chromium tibial tray implanted with a PMMA cemented Co-Cr stem(Type II), Cemented Co-Cr tibial tray with a uncemented Co-Cr stem(Type III), Cemented Ultra High Molecular Weight Polyethylene (UHMWPE) tibial tray with a cemented UHMWPE stem (Type IV), Cemented UHMWPE tray with a uncemented UHMWPE stem(Type V), Cemented Co-Cr tray without a stem(Type VI), and Cemented UHMWPE tray without a stem(Type VII). Uncemented components were assumed to have complete bony in growth and a rigid state of fixation between component and bone. The interface between bone/cement/component of cemented components was also assumed to be fully bonded. Bi-condylar forces were applied. The results indicated that Uncemented stem components provided lower bone stress shielding and stress concentration. The UHMWPE tray and stem component showed better agreement with the intact tibia than the Co-Cr Alloy tray and stem components. If the implant tray can be fixed firmed without a stem, Cemented PE tray without a stem(Type VII) may be recommended to give the best characteristics in the sense of stress distribution and stability.

• Transactions of Materials Processing
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• v.16 no.8
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• pp.603-613
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• 2007

This paper is concerned with joining of thin metal sheets by single stroke clinching process. This method has been used in sheet metal work as it is a simple process and offers the possibility of joining similar-dissimilar thin sheet metals. Clinching generates a joint by overlapping metal sheets deforming plastically by punching and squeezing sequence. AA 5754 aluminum alloy of 0.5 mm thick sheets have been selected as a modal material and the process has been simulated under different process conditions and the results have been analyzed in terms of the quality of clinch joints which are influenced mainly by tool geometries. The rigid-plastic finite element method is applied to analyses in this paper. Analysis is focused mainly on investigation of deformation and material flow patterns influenced by major geometrical parameters such as die diameter, die depth, groove width, and groove corner radius, respectively. To evaluate the quality of clinch joints, four controlling or evaluation parameters have been chosen and they are bottom, neck thickness of bottom and top sheets, and undercut thickness, respectively. It has been concluded from the simulation results that the die geometries such as die depth and diameters are the most decisive process parameters influencing on the quality of clinch joints, and the bottom thickness is the most important evaluation parameter to determine if the quality of clinch joints satisfies the demand for industrial application.

• Journal of Powder Materials
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• v.22 no.6
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• pp.396-402
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• 2015

The organic binder-free paste for dye-sensitized solar cell (DSSC) has been investigated using peroxo titanium complex. The crystal structure of $TiO_2$ nanoparticles, morphology of $TiO_2$ film and electrical properties are analyzed by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Electrochemical Impedance Spectra (EIS), and solar simulator. The synthesized $TiO_2$ nanopowders by the peroxo titanium complex at 150, 300, $400^{\circ}C$, and $450^{\circ}C$ have anatase phase and average crystal sizes are calculated to be 4.2, 13.7, 16.9, and 20.9 nm, respectively. The DSSC prepared by the peroxo titanium complex binder have higher $V_{oc}$ and lower $J_{sc}$ values than that of the organic binder. It can be attributed to improvement of sintering properties of $TCO/TiO_2$ and $TiO_2/TiO_2$ interface and to formation of agglomerate by the nanoparticles. As a result, we have investigated the organic binder-free paste and 3.178% conversion efficiency of the DSSC at $450^{\circ}C$.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.2005-2012
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• 2019

This work investigated the radiation attenuation characteristics of three series of tellurite glass systems with the following compositions: 30PbO-10ZnO-xTeO₂-(60-x)B₂O₃ where x = 10, 30, 40, 50 and 60 mol%, xBaO-xB₂O₃-(100-2x)TeO₂ with x = 15-40 mol% and 50ZnO-(50-x)P₂O₅-xTeO₂, where x = 0, 10, .40 mol%. The results revealed that the attenuation parameters in all the samples decrease with increase in the energy, which implied that all the samples have better interaction with gamma photons at low energies and thus higher photon attenuating efficiency. From the three systems, the samples coded as PbZnBTe60, BaBTe70 and ZnPTe40 have the lowest half value layer values and accordingly have superior photon attenuation efficacy. The maximum effective atomic number values were found for energy less than 0.1 MeV particularly near the K-edges absorption of the heavy atomic number elements such as Te, Ba and Pb. At the lowest energy, the Z_eff values are found in the range of 62.33-66.25, 49.43-50.81 and 24.99-35.83 for series 1-3 respectively. Also, we found that the density of the glass remarkably affects the photon attenuation ability of the selected glasses. The mean free path results showed that the PbO-ZnO-TeO₂-B₂O₃ glass system has better radiation shielding efficiency than the glass samples in series 2 and 3.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.241-245
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• 2006

EEFL(External Electrode Fluorescent Lamp) for LCD displays are analyzed on electrical and optical characteristics by various electrode length. The electrodes of EEFL are coated at the outside of the glass tube. Brightness and efficiency of the EEFL are affected on lamp impedance characteristic. So, the experimental models are proposed for analysis and measurements of the brightness and efficiency of the lamps according to the electrode length. The sample of LCD backlight unit is used for these experiments, EEFL arrayed BLU of 32' for commercial TV display. The parameters of the experiments were quantised for simple result reading as the length of electrodes as 15, 23 and 30 mm. The inverter was designed and manufactured in the laboratory as the Full-Bridge switching inverter. The feature of the output were measured on voltages about 1000 - 1400V at the currents of 11 - 29 mA and the brightness $15,000\;cd/m^2-40,000\;cd/m^2$. The experiments have shown that the brightness are increased by increasing of the electrode lengths which have the lamp currents increased. But at an certain conditions, the brightness and efficiency were decreased because of unmatched between the inverter output and lamp impedance. The optimum applications of the EEFL BLU of 32' in this experiments have been shown to choose the parameters for driving frequencies of 100 kHz - 150 kHz, the brightness of $18,000-19,000\;cd/m^2$ and efficiencies of 40 - 45 lm/w.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.16-18
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• 2002

We attempted to fabricate a dendrimer Langmuir-Blodgett(LB) films containing 48 pyridinepropanol functional end group. As the pyridinepropanol functional group could form a complex structure with metal ions. In this study the samples for electrical measurement were fabricated to two types metal complexes with $Pt^{4+}$ and $Fe^{2+}$ ions by LB method. And we have investigated the surface activity at the air-water interface as well as the electrical properties for the monolayers of pure G4-48PyP dendrimer and its complex with metal ions($Pt^{4+}$ and $Fe^{2+}$ ions). In the surface pressure-area($\pi-A$) isotherms of the dendrimers, the stable condensed films formed at the air-water interface and the metal ions effect showed the difference on molecular behavior. We have studied the electrical properties of the ultra thin dendrimer LB films investigated by the current-voltage(I-V) characteristics of metal/dendrimer LB films/metal(MIM) structure. In conclusion, it is demonstrated that the metal ion around G4-48PyP dendrimer can contribute to make formation of network structure among dendrimers and it result from the change of electrical properties.

• Nuclear Engineering and Technology
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• v.50 no.3
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• pp.470-477
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• 2018

With a highly functional methyl vinyl silicone rubber (VMQ) matrix and filler materials of $B_4C$, PbO, and benzophenone (BP) and through powder surface modification, silicone rubber mixing, and vulcanized molding, a flexible radiation shielding and resistant composite was prepared in the study. The dispersion property of the powder in the matrix filler was improved by powder surface modification. BP was added into the matrix to enhance the radiation resistance performance of the composites. After irradiation, the tensile strength, elongation, and tear strength of the composites decreased, while the Shore hardness of the composites and the crosslinking density of the VMQ matrix increased. Moreover, the composites with BP showed better mechanical properties and smaller crosslinking density than those without BP after irradiation. The initial degradation temperatures of the composites containing BP before and after irradiation were $323.6^{\circ}C$ and $335.3^{\circ}C$, respectively. The transmission of neutrons for a 2-mm thick sample was only 0.12 for an Am-Be neutron source. The transmission of ${\gamma}$-rays with energies of 0.662, 1.173, and 1.332 MeV for 2-cm thick samples were 0.7, 0.782, and 0.795, respectively.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.73-77
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• 2000

Single crystal and polycrystalline Si thin films were doped with phosphorus by a 2-zone diffusion method to develop the low-resistivity polycrystalline Si electrode for a hemispherical grain. Solid phosphorus source was used in order to achieve uniformly and highly doped surface region of polycrystalline Si films having rough surface morphology. In case of 2-zone diffusion method, it is proved that the heavy doping near the surface area can be achieved even at a relatively low temperature. SIMS analysis revealed that phosphorus doping concentration in case of using solid P as a doping source was about 50 times as that of phosphine source at 750$^{\circ}C$. Also, ASR analysis revealed that the carrier concentration was about 50 times as that of phosphine. In order to evaluate the electrical characteristics of doped polycrystalline Si films for semiconductor devices, MOS capacitors were fabricated to measure capacitance of polycrystalline Si films. In ${\pm}$2 V measuring condition, Si films, doped with solid source, have 8% higher $C_{min}$ than that of unadditional doped Si films and 3% higher $C_{min}$ than that of Si films doped with $PH_3$ source. The leakage current of these films was a few fA/${\mu}m^2$. As a result, a 2-zone diffusion method is suggested as an effective method to achieve highly doped polycrystalline Si films even at low temperature.

• Progress in Superconductivity
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• v.4 no.1
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• pp.1-9
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• 2002

Transferring single flux quanta across a Josephson junction at an exactly determined rate has made highly precise voltage measurements possible. Making use of self-shunted Nb-based SINIS junctions, programmable fast-switching DC voltage standards with output voltages of up to 10 V were produced. This development is now extended from fundamental DC measurements to the precise determination of AC voltages with arbitrary waveforms. Integrated RSFQ circuits will help to replace expensive semiconductor devices for frequency control and signal coding. Easy-to-handle AC and inexpensive quantum voltmeters of fundamental accuracy would be of interest to industry. In analogy to the development in the flux regime, metallic nanocircuits comprising small-area tunnel junctions and providing the coherent transport of single electrons might play an important role in quantum current metrology. By precise counting of single charges these circuits allow prototypes of quantum standards for electric current and capacitance to be realised. Replacing single electron devices by single Cooper pair circuits, the charge transfer rates and thus the quantum currents could be significantly increased. Recently, the principles of the gate-controlled transfer of individual Cooper pairs in superconducting A1 devices in different electromagnetic environments were demonstrated. The characteristics of these quantum coherent circuits can be improved by replacing the small aluminum tunnel Junctions by niobium junctions. Due to the higher value of the superconducting energy gap ($\Delta_{Nb}$ ＝ $7\Delta_{Al}$), the characteristic energy and the frequency scales for Nb devices are substantially extended as compared to A1 devices. Although the fabrication of small Nb junctions presents a real challenge, the Nb-based metrological devices will be faster and more accurate in operation. Moreover, the Nb-based Cooper pair electrometer could be coupled to an Nb single Cooper pair qubit which can be beneficial for both, the stability of the qubit and its readout with a large signal-to-noise ratio..