• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.427-428
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• 2008

New high efficiency green light emitting phosphorescent devices with emission layers of [TCTA/TCTA:TAZ/TAZ]:Ir$(ppy)_3$ have been fabricated and evaluated in this paper. Among the devices having different thicknesses of TCTA:TAZ mixed layer in the total 300$\AA$-thick host of TCTA(80$\AA$)/TCTA:TAZ (50~100$\AA$)/TAZ, the device with host of TCTA(80$\AA$)/TCTA:TAZ(90$\AA$)/TAZ(130$\AA$) showed the best electroluminescent characteristics with the current density of 95 mA/$cm^2$ and luminance of 25,000 cd/$m^2$ at an applied voltage of 10V. The maximum current efficiency was 52 cd/A under the luminance of 400 cd/$m^2$.

• International Journal of Naval Architecture and Ocean Engineering
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• v.8 no.4
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• pp.312-319
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• 2016

Measured wave data covering two years simultaneously at 3 locations along the eastern Arabian Sea reveals the presence of long-period (peak wave period > 18 s) low-amplitude waves (significant wave height < 1 m) and the characteristics of these waves are described in this article. In a year, 1.4-3.6% of the time, the low-amplitude long-period swells were observed, and these waves were mainly during the nonmonsoon period. The wave spectra during these long-period swells were multi-peaked with peak wave period around 18.2 s, the secondary peak period around 13.3 s and the wind-sea peak period at 5 s. The ratio of the spectral energy of the wind-sea peak and the primary peak (swell) was slightly higher at the northern location (0.2) than that at the southern location (0.15) due to the higher wind speed present at the northern location.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.62-68
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• 2004

A comprehensive numerical analysis has been carried out for both non-reacting and reacting flows in a scramjet engine combustor with and without a cavity. The theoretical formulation treats the complete conservation equations of chemically reacting flows with finite-rate chemistry of hydrogen-air. Turbulence closure is achieved by means of a k-$\omega$ two-equation model. The governing equations are discretized using a MUSCL-type TVD scheme, and temporally integrated by a second-order accurate implicit scheme. Transverse injection of hydrogen is considered over a broad range of injection pressure. The corresponding equivalence ratio of the overall fuel/air mixture ranges from 0.167 to 0.50. The work features detailed resolution of the flow and flame dynamics in the combustor, which was not typically available in most of the previous studies. In particular, the oscillatory flow characteristics are captured at a scale sufficient to identify the .underlying physical mechanisms. Much of the flow unsteadiness is related not only to the cavity, but also to the intrinsic unsteadiness in the flow-field. The interactions between the unsteady flow and flame evolution may cause a large excursion of flow oscillation. The roles of the cavity, injection pressure, and heat release in determining the flow dynamics are examined systematically.

• Journal of Ginseng Research
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• v.35 no.2
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• pp.155-161
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• 2011

Leaf characteristics of mature 2, 3 and 4-year-old North American ginseng (Panax quinquefolius L.) leaves on fruiting and non-fruiting(NF) plants were studied. Leaflets of the 2-year-old plants had the lowest fresh and dry weight, area, volume and internal gas volume. Inflorescence removal in 3-year-old plants did not affect leaf characteristics or ginsenoside concentration but in 4-year-old plants it increased leaf fresh (38.6%) and dry (43.9%) weight, leaf area (29.1%), specific leaf mass (11.4%), leaf volume (43.1%), and leaf thickness (12.1%), and decreased leaf water content (6.2%). Cultivated ginseng, although an understorey plant, had the specific leaf mass, 35.6 g $m^{-2}$ (range, 36 to 39 g $m^{-2}$) and a chlorophyll a/b ratio of 2.40 to 2.61, both suggesting the ability to perform like a sunny habitat plant. Also, specific leaf mass of 35.6 g $m^{-2}$ is similar to that reported for perennial plants, 36.8 g $m^{-2}$, rather than that for annuals, 30.9 g $m^{-2}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.557-563
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• 2003

SiC has been an useful material for the high voltage, high temperature, and high frequency devices, however, the required high process temperature to activate the implanted p-type dopants has hindered further developments. In this study, we report, for the first time, on the laser activation of implanted Al and non-alloyed Mo ohmic contacts and its application to MOSFET fabrication. The contact and sheet resistance measured from CTLM patterns have decreased by increasing laser power, and the lowest values are 3.9 $K\Omega$/$\square$ and 1.3 $\times$ 10$^{-3}$ $\Omega$-cm$^2$, respectively, at the power density of 1.45 J/cm$^2$ The n-MOSFETs fabricated on laser activated p-well exhibit well-behaved I-V characteristics and threshold voltage reduction by reverse body voltage. These results prove that the laser process for implant activation is an alternative low temperature technology applicable to SiC devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.1005-1009
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• 2008

A noble infrared $\lambda/4$ absorbing structure using metal reflector was studied for uncooled infrared sensors. This paper described the design and the fabrication of IR uncooled detectors which were composed of 21 by 21 elements using the surface micromachining technology. The characteristics of the array were investigated in the spectral region of 4.26 ${\mu}m$. The fabricated detectors exhibited the thermal mass of $9.75\times10^{-9}$ J/K, the thermal conductance of $1.31\times10^{-6}$ W/K, the thermal time constant of 7.4 ms, the responsivity of $1.07\times10^5$ V/W and the detectivity of $1.04\times10^9$ $cmHz^{1/2}/W$, at the chopper frequency of 10 Hz and the bias current of 9.22${\mu}A$. Finally the absorptance efficiency of $\lambda/4$ absorbing structure was about 23.2 % higher than that of absence absorbing structure.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1280-1282
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• 1993

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure, using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers, so that it is better suited to explain experimental results. The structure used is an $Al_{0.5}Ga_{0.5}$As/GaAs/$Al_{0.5}Ga_{0.5}As$ single quantum well. In this work, we estimate the theoretical current-voltage characteristics, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.228-230
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• 1994

A Spotter ion Plating(SIP) system with a r. f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The discharge voltage-discharge characteristics curves of a FTS source could be characterized by the fern of $I{\propto}V^n$ with n in the range of $8{\sim}12$. The energy of ions incident on the substrate depended on the sheath potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of $30{\sim}50N$, and markedly influenced by substrate bias voltage.

• Nuclear Engineering and Technology
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• v.54 no.1
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• pp.301-309
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• 2022

This work aims to establish some X-ray qualities recommended by the International Standard Organization (ISO) using the half-value layer (HVL) and H_p(10) dosimetry approaches. The HVL values of the following qualities N-60, N-80, N-100, N-150 and N-250 were determined using various attenuation layers. The obtained results were compared to those of reference X-ray beam qualities and a good agreement was found (difference less than 5% for all qualities). The GAMOS (Geant4-based Architecture for Medicine-Oriented Simulations) radiation transport Monte Carlo toolkit was employed to simulate the production of X-ray spectra. The characteristics HVLs, mean energy and the spectral resolution of simulated spectra have been calculated and turned out to be conform to the ISO reference ones (difference less than the limit allowed by ISO). Furthermore, the conversion coefficients from air kerma to personal dose equivalent for simulated and measured spectra were fairly similar (the maximum difference less than 4.2%).

• Progress in Superconductivity and Cryogenics
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• v.9 no.3
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• pp.57-61
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• 2007

The current limiting characteristics of hybrid SFCL with additional power electronic devices was investigated in order to improve operation reliabilities. The hybrid SFCL developed consists of a superconducting trigger (S/T) part, a fast switch (F/S) module and a current limiting (C/L) part. Although hybrid SFCL had shown a excellent current limiting characteristics, this device was rather vulnerable to the residual arc currents which could exist during fast switch operation. This undesirable arc should be extinguished as quickly as possible in order to implement perfect fault current commutation. So, in order to eliminate the residual arcs between fast switch contacts, the power electronic devices (IGBT or GTO) were connected in series between the S/T part and the interrupter of the F/S module. According to the fault tests conducting with an input voltage of $270\;V_{rms}$ and a fault current of $5\;kA_{rms}$, The power electronic devices could perfectly remove the arc generated between the contacts of the interrupter within 4 ms after the fault occurred. From the test analysis, it was confirmed that the hybrid SFCL could enhance the operation reliability by adopting additional power electronic devices.