• Journal of IKEEE
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• v.19 no.1
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• pp.41-44
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• 2015

Silicon trench process for bulk fin field effect transistor (finFET) is suggested without using chemical mechanical polishing (CMP) that cause contamination problems with chemical stuff. This process uses thickness difference of photo resistor spin coating and silicon nitride sacrificial layer. Planarization of silicon oxide and silicon trench formation can be performed with etching processes. In this work 50 nm silicon trench is fabricated with AZ 1512 photo resistor and process results are introduced.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.641-649
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• 2016

In this paper, a novel time-domain measurement technique on a high parallelism probe card with protection resistors installed is proposed. The measured signal amplitude decreases when the measurement is performed by Needle Auto Calibration (NAC) probing on a high parallelism probe card with installed resistors. Therefore, the original signals must be carefully reconstructed, and the compensation coefficient, which is related to the number of channel branches and the value of protection resistors, must be introduced. The accuracy of the reconstructed signals is analyzed based on the varying number of channel branches and various protection resistances. The results demonstrate that the proposed technique is appropriate for evaluating the overall signal performance of probe cards with Automatic Test Equipment (ATE), which enhances the efficiency of probe card performance test dramatically.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1829-1831
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• 2001

A novel multi-section power divider configuration is proposed to obtain wide-band frequency performance up to microwave frequency region. Design procedures for the proposed microwave broadband power divider are composed of a planar multi-section three-ports hybrid and a waveguide transformer design procedures. The multi-section power divider is based on design theory of the optimum quarter-wave transformer. Furthermore, in order to obtain the broadband isolation performance between the two adjacent output ports, the odd mode equivalent circuit should be matched by using the lossy element such as resistor. The derived design formula for calculating these odd mode matching elements is based on the singly terminated filter design theory. The waveguide transformer section is designed to suppress the propagation of the higher order modes such as waveguide modes due to employing the metallic electric wall. Simulation and experiment show excellent performance of multi section power divider.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.543-544
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• 2008

Nowadays, the research on the system integration using various technologies, like MCM-C, MCM-L and MCM-D. Especially, MCM-D technology is suitable for mmwave application due to its high resolution of patterning and thermal property similar to that of semiconductor devices. In this work, integrated passive devices like inductor, capacitor and resistor are evaluated on the GaAs substrate and their characteristics are examined. And finally, the Wilkinson power divider using lumped IPD are evaluated on GaAs substrate and it shows low insertion loss below 0.5 dB and the isolation over 15 dB.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.273-277
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• 2003

This paper presents a structure of the Wilkinson power divider that can suppress the 9ea harmonic output. The power divider consists of ${\lambda}/4n$ open stubs, which are located at the $3{\lambda}/4$ branches and parallel connection of resistor which shunts the output ports. Experimental results show that this power divider suppresses from 1st to 9th harmonic components to less than -37dB, while maintaining the characteristics of a conventional Wilkinson power divider; featuring an equal power split, a simultaneous impedance matching at all ports and a good isolation between output ports. these results agree quite well with the simulation results.

• Journal of electromagnetic engineering and science
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• v.19 no.1
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• pp.42-47
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• 2019

This paper introduces a modified Wilkinson power divider that uses uniform transmission lines for various terminated impedances and an arbitrary power ratio. For the designed power ratio, the proposed divider changes only the electrical lengths of the transmission lines between the input and output ports, and those between the output ports and the isolation resistor. In this case, even when various termination impedances of the ports exist, the divider characteristics are satisfied. To verify the feasibility of the proposed divider, two circuits were designed to operate at a frequency of 2 GHz with 2:1 and 4:1 power splitting ratios and various terminated impedances of 40, 70, and $60{\Omega}$ for one circuit, and 50, 70, and $60{\Omega}$ for the other. The measurement and simulation results were in good agreement.

• Journal of electromagnetic engineering and science
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• v.10 no.1
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• pp.28-34
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• 2010

This paper introduces a new U.S. ultra-wideband(UWB: 3.1~10.6 GHz) 1:2 power divider based on a single section Wilkinson type configuration. The divider provides very flat in-band power splitting, high isolation, low insertion loss, sharp roll-off bandpass filtering, and DC blocking characteristics. The circuit consists of a $\lambda$/4 Y resonator, three capacitively coupled $\lambda$/2 short-circuited lines, and a resistor between the two output ports. The circuit structure was simulated with ADS and HFSS, and realized with low-temperature co-fired ceramic(LTCC) green tape, which has a dielectric constant of 7.8. $|S_{11}|$ better than 10 dB, $|S_{21}|$ and $|S_{31}|$ less than 3.2 dB, with both $|S_{22}|$ and $|S_{32}|$ measured as better than 12 dB for the whole UWB band. Measurement results agree closely with HFSS simulation results. The power divider has a compact size of $4\times9\times0.6mm^3$.

• Journal of electromagnetic engineering and science
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• v.8 no.3
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• pp.129-133
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• 2008

An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.

• Journal of Sensor Science and Technology
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• v.3 no.1
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• pp.12-18
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• 1994

In this study, we fabricated and characterized a calorimetric-type flow sensing element using a micromachined silicon substrate. The cooling and heating effects resulted from the gas flow were measured by two temperature sensors located at both sides of the heating resistor, and the insulator diaphragm was employed as a substrate in order to improve thermal isolation. The sensor generated $0{\sim}378.4mV$ output signal under 10V bridge-applied voltage when the nitrogen gas was passed on the sensor surface having a mass flow rate of $0{\sim}0.25grs/min$, and reached to the stable operating condition within 10 seconds.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.113-120
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• 1994

Silicon flow sensor that can detect the velocity and direction of air flow was designed and fabricated by integrated circuit process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm, a heater at the center of the diaphragm, and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity of the sensor due to excellent thermal isolation property of dielectric materials and their tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the proposed structure. The sensor is fabricated using CMOS compatible process followed by the anisotropic etching of silicon in KOH and EDP solutions to form I$\mu$ m thick dielectric diaphragm as the last step. TCR(Temperature Coefficient of Resistance) of the heater of the fabricated sensors was measured to calculate the operating temperature of the heater and the output voltage of the sensor with respect to flow velocity was also measured. The TCR of the polysilicon heater resistor is 697ppm/K, and the operating temperature of the heater is 331$^{\circ}C$ when the applied voltage is 5V. Measured sensitivity of the sensor is 18.7mV/(m/s)$^{1/2}$ for the flow velocity of smaller than 10m/s.