• Journal of Power Electronics
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• v.16 no.1
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• pp.362-373
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• 2016

The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (u_Ee) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.8
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• pp.35-40
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• 2008

This paper proposes a dual-band balun which is based on Wilkinson power divider. By inserting $\lambda/2$ transmission line between port 2 and 3, this balun shows good matching at all ports and improved isolation. We use matamaterial(CRLH, D-CRLH) structure for a miniaturization of the circuit implementation and dual-band operation at TDMB frequency range(195MHz) and DVB-H frequency range(670MHz). The proposed balun is designed with return loss larger than -12.98dB at all port, and isolation larger than -12.4dB, the amplitude imbalance between output signals less than 0.08dB, also phase differences of outputs less than $2.8^{\circ}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.1
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• pp.47-53
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• 2003

In this paper we proposed a novel dual-band compact folded patch antenna with the same linear polarizations and high isolation characteristic between the two frequency range. The antenna is loaded with a high permittivity dielectric material in order to reduce the antenna size and open circuit stubs are used in order to broaden the bandwidth. The fractional bandwidths of the optimized antenna with demensions 4 mm${\times}$3 mm${\times}$5 mm are 3.0 % at 5.6 GHz band and 2.8 % at 5.8 GHz band, respectively. The isolation characteristic between the two ports is less than -26 dB within the operating frequency range.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1684-1685
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• 2011

This paper presents a theoretical and numerical analysis for thermal isolation of silicon micro-structures, especially for a large size with poor thermal conductivity, as well as straightforward solution for such an issue. Additional metal patterns underneath the silicon structures effectively reduces the thermal isolation. Heat transfer mechanism is analyzed using an equivalent circuit of thermal network including plasma, a heat source, heat capacitors, and thermal resistances. The FEM simulation was carried out to investigate the temperature change of silicon micro-structures according to process time. The temperature of silicon micro-structures with 2 ${\mu}m$ thick chrome layer at a steady state is $86^{\circ}C$, an approximately 40% decrease from the silicon microstructure without thin metal ($122^{\circ}C$)

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.15-16
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• 2010

This paper is study on a high efficiency DC-DC converter of discontinuous conduction mode (DCM) added electric isolation. The converters of high efficiency are generally made that the power losses of the used semiconductor switching devices is minimized. To achieve high efficiency system, the proposed converter is constructed by using a quasi resonant circuit. The control switches using in the converter are operated with soft switching by quasi resonant method. The control switches are operated without increasing their voltage and current stresses by the soft switching technology. The result is that the switching loss is very low and the efficiency of the system is high. The proposed converter is also added electric isolation which is used a pulse transformer. When the power conversion system is required electric isolation, the proposed converter is adopted with the converter system development of high efficiency. The soft switching operation and the system efficiency of the proposed converter are verified by digital simulation and experimental results.

• Journal of information and communication convergence engineering
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• v.22 no.1
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• pp.14-22
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• 2024

This study presents the design of a Wilkinson power divider for three-way output ports (WPD3OP), which incorporates a defected ground structure (DGS). An asymmetric power divider is integrated into the output ports of the conventional Wilkinson power divider (WPD), establishing a three-way output port configuration. The DGS introduces periodic or irregular patterns into the ground plane to suppress unwanted electromagnetic wave propagation, and its incorporation can enhance the performance of the power divider, in terms of the power-division ratio, isolation, and bandwidth, by reducing spurious resonances. The proposed design algorithm for an asymmetric power divider for three-way output ports is analyzed via circuit simulations using High-Frequency Simulation Software (HFSS). The results verify the validity of the proposed method. The analysis of the WPD3OP integrated with DGS certifies the achievement of a center frequency of 2 GHz. This confirmation is supported by schematic ideal design simulation results and measurements encompassing insertion losses, return losses, and isolation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.1-7
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• 1997

In ahigh power amplifier design, power combiner/divider is used to connect low power amplifiers in parallel. The raidal structure of the powe combiner/divider has not only a good characteristics of port-to-port isolation but also an advantage of giving a redundancy to the structure itself by using RF switches. The parastics of a power resistor, that would be a problem in design process, are removed by both slot lines and cavity resonators, and the comon node in the circuit is rdesigned as a planar topology, and thus a new type of 4-way radial power combiner/divider is accomplished at 1840 ~ 1870 MH PCS frequency band. The insertion loss, reflection, and isolation characteristics of 40way radial power combiner/divider which can be adaptable to PCS system in this thesis are -0.3dB, -24dB,a dn -27dB respectively.

• Journal of Power Electronics
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• v.15 no.5
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• pp.1402-1408
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• 2015

A MOSFET's gate driver based on magnetic coupling is investigated. The gate driver can meet the demands in applications for wide range of duty cycles and high frequency. Fully galvanic isolation can be realized, and no auxiliary supply is needed. The driver is insensitive to the leakage inductor of the isolated transformer. No gate resistor is needed to damp the oscillation, and thus the peak output current of the gate driver can be improved. Design of the driving transformer can also be made more flexible, which helps to improve the isolation voltage between the power stage and the control electronics, and aids to enhance the electromagnetic compatibility. The driver's operation principle is analyzed, and the design method for its key parameters is presented. The performance analysis is validated via experiment. The disadvantages of the traditional magnetic coupling and optical coupling have been conquered through the investigated circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.13-16
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• 1998

An anomalous current characteristics which show the superposition of a low current level and high current level at the subthreshold region when SONOSFETs are in memory states were investigated. We have assumed this phenomena were resulted from the effect of parasitic transistors by LOCOS isolation and were modeled to a parallel equivalent circuit of one memory transistor and two parasitic transistors. Theoretical curves are well fitted in measured log I$_{D}$-V$_{G}$ curves independent of channel width of memory devices. The difference between low current level and high current level is apparently decreased with decrease of channel width of devices because parasitic devices dominantly contribute to the current conduction with decrease of channel width of memory devices. As a result, we concluded that the LOCOS isolation has to selectively adopt in the design of process for charge-trap type NVSM.VSM.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2240-2246
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• 2007

Optically coupled linear isolation amplifier requires special care to avoid oscillation in actual applications. In this paper methods to analyze the frequency characteristics of the amplifier are proposed to reveal the cause of oscillation and to provide design guidelines. The loop gain of the amplifier obtained through the equivalent circuit model shows that the phase margin is too small to ensure stable operations. Methods to get non-oscillatory response are proposed and the resulting frequency responses are analyzed. The common method adding a small capacitor to the amplifier is shown to degrade the frequency bandwidth. The frequency response of output voltage explains the need of filter capacitor in output stage. The usefulness of the method is verified through experiments.