Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1998.11a
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- Pages.13-16
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- 1998
Anomalous Subthreshold Characteristics for Charge Trapping NVSM at memory states.
기억상태에 있는 전하트랩형 비휘발성 반도체 기억소자의 하위문턱이상전류특성
Abstract
An anomalous current characteristics which show the superposition of a low current level and high current level at the subthreshold region when SONOSFETs are in memory states were investigated. We have assumed this phenomena were resulted from the effect of parasitic transistors by LOCOS isolation and were modeled to a parallel equivalent circuit of one memory transistor and two parasitic transistors. Theoretical curves are well fitted in measured log I
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