• Title/Summary/Keyword: Isolation Circuit

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RF MEMS Switches and Integrated Switching Circuits

  • Liu, A.Q.;Yu, A.B.;Karim, M.F.;Tang, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.3
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    • pp.166-176
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    • 2007
  • Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

Fast Component Placement with Optimized Long-Stroke Passive Gravity Compensation Integrated in a Cylindrical/Tubular PM Actuator

  • Paulides, J.J.H.;Encica, L.;Meessen, K.J.;Lomonova, E.A.
    • Journal of international Conference on Electrical Machines and Systems
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    • v.2 no.3
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    • pp.275-282
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    • 2013
  • Applications such as vibration isolation, gravity compensation, pick-and-place machines, etc., would benefit from (long-stroke) cylindrical/tubular permanent magnet (PM) actuators with integrated passive gravity compensation to minimize the power consumption. As an example, in component placing (pick-and-place) machines on printed circuit boards, passive devices allow the powerless counteraction of translator including nozzles or tooling bits. In these applications, an increasing demand is arising for high-speed actuation with high precision and bandwidth capability mainly due to the placement head being at the foundation of the motion chain, hence, a large mass of this device will result in high force/power requirements for the driving mechanism (i.e. an H-bridge with three linear permanent magnet motors placed in an H-configuration). This paper investigates a tubular actuator topology combined with passive gravity compensation. These two functionalities are separately introduced, where the combination is verified using comprehensive three dimensional (3D) finite element analyses.

High Performance MMIC Star Mixer for Millimeter-wave Applications (밀리미터파 응용을 위한 우수한 성능의 MMIC Star 혼합기)

  • Ryu, Keun-Kwan;Yom, In-Bok;Kim, Sung-Chan
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.36 no.10A
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    • pp.847-851
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    • 2011
  • In this paper, we reported on a high performance MMIC star mixer for millimeter-wave applications. The star mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process on 2 mil thick GaAs substrate. The average conversion loss of 13 dB was measured in the RF frequency range of 81 GHz to 86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-LO isolation characteristics are greater than 30 dB and the input 1-dB compression are approximately 4 dBm. The total chip size is 0.8 mm ${\times}$ 0.8 mm.

Analysis and Implementation of a New ZVS DC Converter for Medium Power Application

  • Lin, Bor-Ren;Shiau, Tung-Yuan
    • Journal of Electrical Engineering and Technology
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    • v.9 no.4
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    • pp.1296-1308
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    • 2014
  • This paper presents a new zero voltage switching (ZVS) converter for medium power and high input voltage applications. Three three-level pulse-width modulation (PWM) circuits with the same power switches are adopted to clamp the voltage stress of MOSFETs at $V_{in}/2$ and to achieve load current sharing. Thus, the current stresses and power ratings of transformers and power semiconductors at the secondary side are reduced. The resonant inductance and resonant capacitance are resonant at the transition interval such that active switches are turned on at ZVS within a wide range of input voltage and load condition. The series-connected transformers are adopted in each three-level circuit. Each transformer can work as an inductor to smooth the output current or a transformer to achieve the electric isolation and power transfer. Thus, no output inductor is needed at the secondary side. Three center-tapped rectifiers connected in parallel are used at the secondary side to achieve load current sharing. Compared with the conventional parallel three-level converters, the proposed converter has less switch counts. Finally, experiments based on a 1.44kW prototype are provided to verify the operation principle of proposed converter.

A Secondary Resonance Soft Switching Half Bridge DC-DC Converter with an Inductive Output Filter

  • Chen, Zhang-yong;Chen, Yong
    • Journal of Power Electronics
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    • v.17 no.6
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    • pp.1391-1401
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    • 2017
  • In this paper, a secondary resonance half-bridge dc-dc converter with an inductive output filter is presented. The primary side of such a converter utilizes asymmetric pulse width modulation (APWM) to achieve zero-voltage switching (ZVS) of the switches, and clamps the voltage of the switch to the input voltage. In addition, zero current switching (ZCS) of the output diode is achieved by a half-wave rectifier circuit with a filter inductor and a resonant branch in the secondary side of the proposed converter. Thus, the switching losses and diode reverse-recovery losses are eliminated, and the performance of the converter can be improved. Furthermore, an inductive output filter exists in the converter reduce the output current ripple. The operational principle, performance analysis and design equation of this converter are given in this paper. The analysis results show that the output diode voltage stress is independent of the duty cycle, and that the voltage gain is almost linear, similar to that of the isolation Buck-type converter. Finally, a 200V~380V input, 24V/2A output experimental prototype is built to verify the theoretical analysis.

Bidirectional Flyback Converter Design Methodology for Differential Power Processing Modules in PV Applications (PV 시스템의 차동 전력 조절기 모듈용 양방향 플라이백 컨버터 설계 방법)

  • Park, Seungbin;Kim, Mina;Jeong, Hoejeong;Kim, Taewon;Kim, Katherine A.;Jung, Jee-Hoon
    • The Transactions of the Korean Institute of Power Electronics
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    • v.24 no.5
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    • pp.379-387
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    • 2019
  • A bidirectional flyback converter is a suitable topology for use in a PV-to-bus differential power processing (DPP) module for PV applications due to its electrical isolation capability, bidirectional power transfer, high step-up ratio, and simple circuit structure. However, the bidirectional flyback converter design should consider the effect of the output-side power switch utilized for bidirectional operation compared with that of the conventional flyback converter. This study presents the structure and design methodology of the bidirectional flyback converter for a PV DPP module. Magnetizing inductance is designed by calculating the power loss of converter components within the rated load range under the discontinuous conduction mode, which is unaffected by the reverse recovery characteristics of the anti-parallel diode of the output-side power switch. The validity of the proposed design methodology is verified using a 25 W bidirectional flyback converter prototype. The operational principles and the performance of the DPP operation are verified using practical DPP modules consisting of bidirectional flyback converters implemented according to the proposed design methodology.

A Study on the New Microstrip Magic Tee (새로운 형의 마이크로스트립 매직티에 관한 연구)

  • Chang, IK Soo;Kim, Jin Hun
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.17 no.3
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    • pp.36-44
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    • 1980
  • A new coplanar Magic Tee has been formed, The H_arm Is made to have a parallel connection on the plane by using a microstrip and the I_arm is serially coupled by a cavity on the circuit mount and also by a gap formed on the microstrip ground plane. Open and shorted stubs are made to have maximum coupling at the gap of the I-arm, and 2 to 1 impedance matching trinsformers in the I and H-arms are designed to obtain 2nd order Chevyshev characteristics. The impedance matching characteristic on each arm is satisfactory : with VSWR less than 1.25, and the isolation between I and H arms less than -40 dB. These results are in good agreement with theoretical prediction.

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The low conversion loss and low LO power V-band MIMIC Up-mixer (낮은 LO 입력 및 변환손실 특성을 갖는 V-band MIMIC Up-mixer)

  • Lee Sang Jin;Ko Du Hyun;Jin Jin Man;An Dan;Lee Mun Kyo;Cho Chang Shik;Lim Byeong Ok;Chae Yeon Sik;Park Hyung Moo;Rhee Jin Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.12
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    • pp.103-108
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    • 2004
  • In this paper, we present MIMIC(Millimeter-wave Monolithic Integrated Circuit) up-mixer with low conversion loss and low LO power for the V-band transmitter applications. The up-mixer was successfully integrated by using 0.1 ㎛ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide (CPW) structures. The circuit is designed to operate at RF frequencies of 60.4 GHz, IF frequencies of 2.4 GHz, and LO frequencies of 58 GHz. The fabricated MIMIC up-mixer size is 2.3 mmxl.6 mm. The measured results show that the low conversion loss of 1.25 dB when input signal is -10.25 dBm at LO power of 5.4 dBm. The LO to RF isolation is 13.2 dB at 58 GHz. The fabricated V-band up-mixer represents lower LO input power and conversion loss characteristics than previous reported millimeter-wave up-mixers.

Compact and Wideband Coupled-Line 3-dB Ring Hybrids (Coupled Line으로 구성된 작고 넓은 대역폭을 가지는 3-dB Ring Hybrids)

  • Ahn, Hee-Ran;Kim, Jung-Joon;Kim, Bum-Man
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.8
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    • pp.862-877
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    • 2008
  • In this paper, two types of wideband 3-dB ring hybrids are compared and discussed to show the ring hybrid with a set of coupled-line sections better. However, the better one still has a realization problem that perfect matching can be achieved only with -3 dB coupling power. To solve the problem, a set of coupled-line sections with two shorts is synthesized using one- and two-port equivalent circuits and design equations are derived to have perfect matching, regardless of the coupling power. Based on the design equations, a modified ${\Pi}-type$ of transmission-line equivalent circuit is newly suggested. It consists of coupled-line sections with two shorts and two open stubs and can be used to reduce a transmission-line section, especially when its electrical length is greater than ${\pi}$. Therefore, the $3\;{\lambda}/4$ transmission-line section of a conventional ring hybrid can be reduced to less than ${\pi}/2$. To verify the modified ${\Pi}-type$ of transmission- line equivalent circuit, two kinds of simulations are carried out; one is fixing the electrical length of the coupled-line sections and the other fixing its coupling coefficient. The simulation results show that the bandwidths of resulting small transmission lines are strongly dependent on the coupling power. Using modified and conventional ${\Pi}-types$ of transmission-line equivalent circuits, a small ring hybrid is built and named a compact wideband coupled-line ring hybrid, due to the fact that a set of coupled-line sections is included. One of compact ring hybrids is compared with a conventional ring hybrid and the compared results demonstrate that the bandwidth of a proposed compact ring hybrid is much wider, in spite of being more than three times smaller in size. To test the compact ring hybrids, a microstrip compact ring hybrid, whose total transmission-line length is $220^{\circ}$, is fabricated and measured. The measured power divisions($S_{21}$, $S_{41}$, $S_{23}$ and $S_{43}$) are -2.78 dB, -3.34 dB, -2.8 dB and -3.2 dB, respectively at a design center frequency of 2 GHz, matching and isolation less than -20 dB in more than 20 % fractional bandwidth.

High LO-RF Isolation W-band MIMIC Single-balanced Mixer (높은 LO-RF 격리 특성의 W-band MIMIC Single-balanced 믹서)

  • An Dan;Lee Bok-Hyung;Lim Byeong-Ok;Lee Mun-Kyo;Lee Sang-Jin;Jin Jin-Min;Go Du-Hyun;Kim Sung-Chan;Shin Dong-Hoon;Park Hyung-Moo;Park Hyim-Chang;Kim Sam-Dong;Rhee Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.6 s.336
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    • pp.67-74
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    • 2005
  • In this paper, high LO-RF isolation W-band MIMIC single-balanced mixer was designed and fabricated using a branch line coupler and a $\lambda$/4 transmission line. The simulation results of the designed 94 GHz balun show return loss of -27.9 dB, coupling of -4.26 dB, and thru of -3.77 dB at 94 GHz, respectively. The isolation and phase difference were 23.5 dB and $180.2^{\circ}$ at 94 GHz. The W-band MIMIC single-balanced mixer was designed using the 0.1 $\mu$m InGaAs/InAlAs/GaAs Metamorphic HEMT diode. The fabricated MHEMT was obtained the cut-off frequency(fT) of 189 GHz and the maximum oscillation frequency(fmax) of 334 GHz. The designed MIMIC single-balanced mixer was fabricated using 0.1 $\mu$m MHEMT MIMIC Process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. Pl dB(1 dB compression point) of input and output were 10 dBm and -13.9 dBm respectively. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.