• Korean Membrane Journal
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• 제9권1호
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• pp.34-42
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• 2007

A perovskite-type ($La_{0.6}Sr_{0.4}Ti_{0.2}Fe_{0.8}O_{3-{\delta}}$) dense ceramic membrane was prepared by polymerized complex method, using citric acid as a chelating agent and ethylene glycol as an organic stabilizer. Effect of Ti addition on lanthanum-strontium ferrite mixed conductor was investigated by evaluating the thermal expansion coefficient, the oxygen flux, the electrical conductivity, and the phase stability. The thermal expansion coefficient in air was $21.19\;{\times}\;10^{-6}/K$ at 473 to 1,223 K. At the oxygen partial pressure of 0.21 atm ($20%\;O_2$), the electrical conductivity increased with temperature and then decreased after 973 K. The decrement in electrical conductivity at high temperatures was explained by a loss of the lattice oxygen. The oxygen flux increased with temperature and was $0.17\;mL/cm^2{\cdot}min$ at 1,223 K. From the temperature-dependent oxygen flux data, the activation energy of oxygen ion conduction was calculated and was 80.5 kJ/mol at 1,073 to 1,223 K. Also, the Ti-added lanthanum-strontium ferrite mixed conductor was structurally and chemically stable after 450 hours long-term test at 1,173 K.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.125-128
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• 2007

The influence of Co substitution in B-site at perovskite PSCF($Pr_{0.3}Sr_{0.7}CO_{x}Fe_{(1-x)}O_{3}$) was investigated in this study. The PSCF series exhibits excellent MIEC(mixed ionic electronic conductor) properties. ASR(area specific resistance) of PSCF3737 was 0.137 ${\Omega}{\cdot}cm^{2}$ at $700^{\circ}C$. The activation energy of PSCF3737 was also lower than other compositions of PSCF. ASR of PSCF3737 was analysed as two parts at different part of frequency region. Responses at middle frequency part (${\sim}10^2$ Hz) were concerned with oxygen reduction reaction and those at low frequency part (${\sim}10^{-1}$ Hz) were related with oxygen diffusion.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.133-136
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• 2007

Perovskite-structured samarium strontium cobaltite (SSC), which is mixed ionic electronic conductor (MIEC), is considered as a promising cathode material for intermediate temperature-operating solid oxide fuel cell (SOFC) due to its high electrocatalytic property. Cathode material containing cobalt (Co) is unstable at high temperature and has a relatively high thermal expansion property. In this paper, Sm-Sr-(Co,Fe,Ni)-O system with perovskite and spinel structures was investigated in terms of electrochemical property and thermal expansion property, respectively. Area specific resistance (ASR) was measured by ac impedance spectroscopy to investigate the electrochemical property of cathode, and thermal expansion coefficient (TEC) was measured by using dilatometer. Micro structure of cathode was observed by scanning electron microscopy. Perovskite-structured $Sm_{0.5}Sr_{0.5}CoO_{3-\delta}$ showed the ASR of $0.87{\Omega}/cm^{2}$, and $Sm_{0.5}Sr_{0.5}NiO_{3-\delta}$, which actually has a spinel structure, showed the lowest TEC value of $13.3{\times}10^{-6}/K$.

• 한국세라믹학회지
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• 제44권4호
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• pp.214-218
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• 2007

The decrease of polarization resistance in cathode is the key point for operating at intermediate temperature SOFC (solid oxide fuel cell). In this study, the influence of Co substitution in B-site at complex perovskite on the electronic conductivity of PSCM ($Pr_{0.3}Sr_{0.7}Co_xMn_{(1-x)}$) was investigated. The PSCM series exhibits excellent MIEC (mixed ionic electronic conductor) properties. The ASR (area specific resistance) of PSCM3773 was $0.174{\Omega}{\cdot}cm^2\;at\;700^{\circ}C$. The activation energy of PSCM3773 was also lower than other compositions of PSCM. The TEC(thermal expansion coefficient) was decreased by addition of Mn. The ASR values were increased gradually during the thermal cycling test of PSCM37773 due to the delamination between electrolyte and cathode materials. The delamination was caused by the difference of TEC.

• 한국세라믹학회지
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• 제45권11호
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• pp.694-700
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• 2008

Proton conducting oxides based on the $BaCe_{0.9}M_{0.1}O_{3-{\delta}}$ (M = La, AL) were tested for the alternative electrolyte materials of fuel cell. The power density for single cell of Air |Pt| $BaCe_{0.9}M_{0.1}O_{3-{\delta}}$ |Pt| $H_2(3%H_2O)$ system was maximum $0.04W/cm^2$ at $1000^{\circ}C$. In this system, proton transport number was proved to depend on the lattice parameters and the distortion of $CeO_6$ octahedral as a function of the ionic radii of acceptor ions. This proton conducting oxide system requires developing the new electrode materials for application.

• 한국세라믹학회지
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• 제53권6호
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• pp.635-640
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• 2016

Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.

• 한국세라믹학회지
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• 제39권10호
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• pp.994-1000
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• 2002

고상 반응법을 통해 $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ 페롭스카이트계 산소투과 분리막을 제조하였으며, 미세구조에 따른 산소투과 특성 및 기계적 특성을 고찰하였다. 분리막의 미세구조는 소결온도 및 소결 유지시간을 달리함으로써 조절하였으며, 미세구조에 따른 평균 입경 및 상대밀도의 변화를 평가하였다. 입계 분율의 감소에 따라 산소투과유속이 증가하는 경향을 나타내었으며, 본 연구에서 고찰한 소결조건 중에서는 1300${\circ}C$에서 10시간 유지하여 제조한, 상대밀도가 높고 비교적 입경이 조대한 분리막 시편의 경우, 최대 0.37 ml/$cm^2$${\cdot}$min의 산소투과유속이 특정되었다. 파괴강도는 소결체의 상대밀도에 의존적이었으며, 파괴인성은 결정립의 크기에 따라 증가하는 경향을 나타내었다.

• 한국산학기술학회논문지
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• 제19권6호
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• pp.709-714
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• 2018

반도체소자의 접합특성에 따라서 분극의 특성이 달라지는 원인을 조사하였다. 반도체소자의 접합특성은 최종적인 반도체소자의 효율과 관련되기 때문에 중요한 요소이며, 효율을 높이기 위해서는 반도체접합 특성을 이해하는 것은 매우 중요하다. 다양한 성질의 접합을 얻기위하여 n형의 실리콘 위에 절연물질인 carbon doped silicon oxide (SiOC) 박막을 증착하였으며, 아르곤 (Ar) 유량에 따라서 반도체기판의 특성이 달라지는 것을 확인하였다. 전도체인 tin doped zinc oxide (ZTO) 박막을 절연체인 SiOC 위에 증착하여 소자의 전도성을 살펴보았다. SiOC 박막의 특성은 플라즈마에 의하여 이온화현상이 일어날 때 Ar 유량에 따라서 이온화되는 경향이 달라지면서 반도체 계면에서의 공핍현상이 달라졌으며, 공핍층 형성이 많이 일어나는 곳에서 쇼키접합 특성이 잘 형성되는 것을 확인하였다. 아르곤 가스의 유량이 많은 경우 이온화 반응이 많이 일어나고 따라서 접합면에서 전자 홀쌍의 재결합반응에 의하여 전하들이 없어지게 되면 절연특성이 좋아지고 공핍층의 전위장벽이 증가되며, 쇼키접합의 형성이 유리해졌다. 쇼키접합이 잘 이루어지는 SiOC 박막에서 ZTO를 증착하였을 때 SiOC와 ZTO 사이의 계면에서 전하들이 재결합되면서 전기적으로 안정된 ZTO 박막을 형성하고, ZTO의 전도성이 증가되었다. 두께가 얇은 반도체소자에서 흐르는 낮은 전류를 감지하기 위해서는 쇼키접합이 이루어져야 하며, 낮은 전류만으로도 전기신호의 품질이 우수해지고 또한 채널층인 ZTO 박막에서의 전류의 발생도 많아지는 것을 확인하였다.

• 공업화학
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• 제16권5호
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• pp.648-652
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• 2005

대기압하에서 소결이 어렵다고 알려진 초이온 전도체인 $K^+$-beta-aluminas를 attrition mill을 이용하여 약 350 nm의 평균 입도를 가지는 분말로 분쇄한 후, 시편을 일축가압 성형하여 상압 하에서 동일조성의 분위기 분말을 이용하여 소결하였다. 소결온도는 $1400^{\circ}C{\sim}1650^{\circ}C$까지 $50^{\circ}C$ 간격으로 소결하였으며, 각 소결온도에서 시간에 따른 소결특성을 살펴보았다. 또한 고온에서 입자 성장 속도를 조절하기 위하여 $1600^{\circ}C$에서 zone sintering을 실시하였다. $1600^{\circ}C$와 $1650^{\circ}C$에서 소결한 경우와 $1600^{\circ}C$에서 zone sintering한 시편의 경우, 각각 약 93%와 95%의 소결 밀도를 나타내었다. $1600^{\circ}C$ 이상의 온도에서 2 h 이상 장시간 소결할 경우, 입자의 거대성장으로 인하여 소결밀도가 90% 미만으로 감소하였다.