• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.9
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• pp.21-30
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• 1999

Halo pocket implantation in MOSFETs, which is known to be an efficient method to provent the punchthrough and threshold voltage roll-off phenomena, decreases the drain current of MOSFET devices. Although the decrease of the drain current in halo structure MOSFET is usually explained in terms of the increase of the threshold voltage, more decrease in the drain current than is predicted by the increased threshold voltage has experimentally been observed. In this work, the effect of halo doping profile on the drain current degradation is investigated in terms of the field distribution along the channel. Effective mobility model of the halo MOSFETs due to pocket implantation is presented and the degradation of the mobility is shown to be effective in the further decrease of the drain current. Present model is shown to be in good agreement with experimental results.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.10
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• pp.1019-1023
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• 2012

In this research, a novel direct-aluminum-heating-induced crystallization method was developed for the purpose of application to solar cells. By applying a constant current of 3 A to an aluminum thin film, a 200-nm-thick amorphous silicon (a-Si) thin film with a size of $1cm{\times}1cm$ can be crystallized into a polycrystalline silicon (poly-Si) thin film within a few tens of seconds. The Raman spectrum analysis shows a peak of 520 $cm^{-1}$, which verifies the presence of poly-Si. After removing the aluminum layer, the poly-Si thin film was found to be porous. SIMS analysis showed that the porous poly-Si thin film was heavily p-doped with a doping concentration of $10^{21}cm^{-3}$. Thermal imaging shows that the crystallization from a-Si to poly-Si occurred at a temperature of around 820 K.

• Korean Journal of Materials Research
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• v.26 no.5
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• pp.258-265
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• 2016

Fluorine-doped tin oxide (FTO) nanoparticles have been successfully synthesized using ultrasonic spray pyrolysis. The morphologies, crystal structures, chemical bonding states, and electrochemical properties of the nanoparticles are investigated. The FTO nanoparticles show uniform morphology and size distribution in the range of 6-10 nm. The FTO nanoparticles exhibit excellent electrochemical performance with high discharge specific capacity and good cycling stability ($620mAhg^{-1}$ capacity retention up to 50 cycles), as well as excellent high-rate performance ($250mAhg^{-1}$ at $700mAg^{-1}$) compared to that of commercial $SnO_2$. The improved electrochemical performance can be explained by two main effects. First, the excellent cycling stability with high discharge capacity is attributed to the nano-sized FTO particles, which are related to the increased electrochemical active area between the electrode and electrolyte. Second, the superb high-rate performance and the excellent cycling stability are ascribed to the increased electrical conductivity, which results from the introduction of fluorine doping in $SnO_2$. This noble electrode structure can provide powerful potential anode materials for high-performance lithiumion batteries.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.135-135
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• 2003

The fast evolution in the fold of optical communication systems demands powerful optical information treatment. These functions can be performed by integrated optical systems. A key component of such systems is erbium doped waveguide amplifier(EDWA). The intra 4f radiative transition of Er at 1.5 $\mu\textrm{m}$ is particularly interesting because this wavelength is standard in optical telecommunications. The fabrication of waveguide amplifier for integrated optics using sol-gel process has received an increasing attention. Potential advantage of lower cost by less capital equipment and easy processing makes this process an attractive alternatives to conventional technologies like flame hydrolysis deposition, ion exchange and chemical vapor deposition, etc. In addition, sol-gel process has been found to be extremely suitable for the control of composition and refractive index related directly with optical properties. The main drawback of such an amplifier with respect to the EDWA is the need for a much higher Er3+ concentration to compensate for the smaller interaction length. However, the high doping of Er might be resulted in the non-radiative relaxation by clustering of Er ions End co-operative upconversion. In order to solve this problem, we investigate the possibility of avoiding short Er-Er distances by encapsulation of Er3+ ions in hosts such as organic-inorganic hybrid materials. For inorganic-organic hybrid sols, methacryloxypropyltrimethoxysilane (MPTS), zirconyl chloride octahydrate and erbium(III) chloride hexahydrate were used as starting materials, followed by conventional sol-gel process. It was observed by TEM that nano sols having core/shell toplology were formed, depending on the mole ratio of Zr/Er. The surface roughness for the coatings on Si substrate was investigated by AFM as a function of Zr/Er ratio. The local environment and vibrational Properties of Er3+ ions were studied using Near-IR, FT-IR, and UV/Vis spectroscopy. Nano hybrid coatings derived from polymer and Er doped encapsulation Eave the good luminescence at 1.55$\mu\textrm{m}$.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3609-3614
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• 2013

Orthorhombic and hexagonal lanthanum(III) hydroxycarbonate ($LaCO_3OH$) and $Ln^{3+}$-doped $LaCO_3OH$ ($LaCO_3OH:Ln^{3+}$, where Ln = Ce, Eu, Tb, and Ho) powders were prepared by a hydrothermal reaction under ambient pressure and characterized by thermogravimetry, powder X-ray diffraction, infrared and luminescence spectroscopy, and field-emission scanning electron microscopy. The polymorph of $LaCO_3OH$ depended on the reaction temperature, inorganic salt additive, species of $Ln^{3+}$ dopant, and solvent. The calcination of orthorhombic $LaCO_3OH:Ln^{3+}$ (2 mol %) powers at $600^{\circ}C$ yielded a mixture of hexagonal and monoclinic $La_2O_2CO_3:Ln^{3+}$ powders. The relative quantity of the latter increased with decreasing ionic radius of the $Ln^{3+}$ dopant ion and increasing doping concentrations. On the other hand, the calcination of hexagonal $LaCO_3OH:Ln^{3+}$ (2 mol %) powders at $600^{\circ}C$ resulted in a pure hexagonal $La_2O_2CO_3:Ln^{3+}$ powder, regardless of the species of $Ln^{3+}$ ions (Ln = Ce, Eu, and Tb). The luminescence spectra of $LaCO_3OH:Ln^{3+}$ and $La_2O_2CO_3:Ln^{3+}$ were measured to examine the effect of their polymorph on the spectra.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.422-448
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• 1996

Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

• Journal of Information Display
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• v.10 no.1
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.91-91
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• 1999

광소자 기술은 정보 전달 및 저장 기술의 지속적인 증가 요구에 따라 발전을 거듭하여 왔다. 특히 광통신 및 저장 기술에서 광원으로 사용되는 레이저 다이오드는 안정되면서 쉽게 제작할 수 있어야 한다. 이온 주입 방법은 반도체 공정에서 광범위하게 사용되는 공정이며 이미 소자측면에서 안정성이 확보되었다고 볼 수 있으나 대부분 메모리 등의 실리콘 반도체에서 이용되어 왔다. 최근에는 화합물 반도체 분야에서도 적용하는 예가 증가되고 있으나 광원으로 사용되는 레이저 다이오드의 경우는 우수한 품질의 반도체 층이 요구되며 따라서 damage가 큰 이온 주입 방법을 이용한 연구는 아직 많이 이루어져 있지 않다. 본 연구에서는 레이저 다이오드 구조의 성장측에 국부적으로 Fe 이온을 주입하여 도파로를 형성하여 광을 구속하여 도파시키는 동시에 전기적으로도 도파로 부분으로만 다이오드가 형성되도록 하고자 한다. 먼저 p층의 전기적 절연에 필요한 조건을 확보하기 위하여 CBE를 사용하여 Fe가 doping 된 SI-InP wafer 위에 p-InP (Be:5x1017 cm-3)층을 1.2$mu extrm{m}$ 성장한 후 ohmic 층으로 p-InGaAs (Be:1x1019 cm-3)을 0.1$\mu\textrm{m}$ 성장한 시료에 고에너지 이온 주입 장치를 사용하여 Fe 이온을 1MeV, 1.6meV의 에너지에 각각 1x1014cm-2, 2x1014cm-2 의 dose로 전면에 implant 하였다. 이 시료를 tube furnace에서 500, 600, $700^{\circ}C$각각 10분씩 annealing 한 후 재성장을 확인하기 위하여 DCXRD을 측정하였다. 그림 1은 DCXRD rocking curve로 annealing 하기 전 후의 In rich에서 side peak의 감소를 확인 할 수 있었는데 이는 damage가 어느 정도 복구되었음을 의미한다. 또한 절연 특성을 확인하기 위하여 ohmic metal을 증착하여 Hall 효과를 측정하였다. 그림 2에 보이는 것과 같이 annealing 온도가 증가함에 따라 면저항이 크게 증가함을 볼 수 있으며 이온 주입하기 전의 시료에 비해 104 이상의 저항을 갖을 수 있다. 향후 이러한 결과를 바탕으로 1.55$\mu\textrm{m}$ LD 구조에서 발진 특성을 관찰할 계획이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.298-303
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• 2012

$Y_{1-x}VO_4:Eu_x^{3+}$ red phosphors were synthesized with changing the mol ratios of $Eu^{3+}$ ions by using the solid-state reaction method. The crystalline structure of phosphors was found to be a tetragonal system with the maximum diffraction intensity at $25.02^{\circ}$. The grain particles showed the truncated hexagonal patterns with a very homogeneous size distribution at 0.05 mol of $Eu^{3+}$ ion. The excitation spectra of the phosphor ceramics were composed of a broad band centered at 303 nm and weak narrow multilines peaked in the range of 360-420 nm. The dominant emission spectrum was the strong red emission centered at 619 nm due to the $^5D_0{\rightarrow}^7F_2$ electric dipole transition. The experimental results suggest that the optimum doping mol ratio of $Eu^{3+}$ ions for preparing the red phosphors is 0.10 mol with the asymmetry ratio of 5.21.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.181-187
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• 1993

We have studied the anodic oxidation of silicon in the anisotropic etchant of EPW(Ethylenediamine, Pyrocatechol and Water) solution using the cyclic polarization technique. The samples have been characterized by means of X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The results of cyclic polarization experiments show that the anodic oxides formed on p- and n-type silicon wafers break down at the same potential while breakdown does not occur up to open circuit potential in the case of $p^+$-Si. Strong etch-resistance of $p^+$-XPS. SIMS depth profiles suggest that the critical concentration of boron for etch-stop to occur appears to be much higher than what is widely believed.