• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.585-586
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• 2005

BSCCO thin films were fabricated by an ion beam sputtering method with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi2O3. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.2
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• pp.70-77
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• 2007

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.209-215
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• 1997

Aluminum nitride(AIN) thin films were deposited by reactive single ion beam sputtering using N2 or NH3 as reactive gas. The structural, compositional and optical properties of AIN thin films were characterized by XRD, GAXRD, TEM, SEM, XPS UV/VIS spectrophotometer, and FT-IR. All the deposited AIN thin films were amorphous by the analysis fo XRD and GAXRD. However, TEM analysis showed that AIN nano-crystallites were uniformly distributed in the films. The presence of Al-N bonds were also confirmed by FT-IR and XPS analyses. The optical bandgap of AIN films increased up to 6.2 eV and the transmittance was a-bout 100% in visible range with approaching the stoichimetric composition. Irrespective of using N2 or NH3 as reactive gas, the deposited AIN thin films had very smooth surface morphologies. Their refractive index ranged from 1.6 to 1.7.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.11-11
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• 2004

나노기술은 크게 2가지 접근방법을 가진다. 하나는 위에서 아래로(Top-Down)라는 관점으로 벌크물질로부터 이온빔 등을 이용해 이를 작게 잘라가는 방식이며, 다른 하나는 아래에서 위로(Bottom-Up) 방식으로 재질을 구성하는 분자를 재구성해 원하는 물성 및 특성을 가지도록 만드는 방법이다. 이 두 가지 접근 방법은 원하는 결과를 얻기 위해 상호 보완적으로 사용되기도 한다. Top-Down방식의 대표적인 기기로는 접속이온빔 장치(FIB, Focused Ion Beam)를 등 수 있으며, Bottom-Up방식의 대표적인 기기로는 SPM(Scanning Probe Microscope)을 들 수 있다.(중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.361-364
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• 2000

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by reactive ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to 1500 $\AA$ or 2000$\AA$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from 40$0^{\circ}C$ to 80$0^{\circ}C$ in flowing $O_2$or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.52-52
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.181-181
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• 2006

• Journal of the Korean Society for Precision Engineering
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• v.24 no.8 s.197
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• pp.108-115
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• 2007

3D nano-scale manufacturing is an important aspect of advanced manufacturing technology. A key element in ability to view, fabricate, and in some cases operate micro-devices is the availability of tightly focused particle beams, particularly of photons, electrons, and ions. The use of ions is the only way to fabricate directly micro-/ nano-scale structures. It has been utilized as a direct-write method for lithography, implantation, and milling of functional devices. The simulation of ion beam induced physical and chemical phenomena based on sound mathematical models associated with simulation methods is presented for 3D micro-/nanofabrication. The results obtained from experimental investigation and characteristics of ion beam induced direct fabrication will be discussed.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.2
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• pp.38-42
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• 2001

We investigated physical properties of ion-beam mixed Fe/si multilayerd films(MLF) prepared by rf sputtering onto glass substrates at room temperature. Such an ion-beam treatment has led to noticeable changes in the structural and physical properties of the MLF: the formation of a new phase which is characterized by a crystalline silicide with a low coercivity and Tc = 550 K. In contrast to the as-prepared state, the ion-beam mixed MLF contains two magnetic phases. One of them is a very soft (Hc < 2 Oe), but microscopically homogeneous one with M$\sub$eff/=6.7 kG.

• Current Optics and Photonics
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• v.5 no.5
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• pp.576-582
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• 2021

Dichroic beam-splitter (DBS) with polarization-maintaining took an important role in the free space quantum telecommunication tests on the Micius satellite of China. In this presentation, we designed and prepared a 50 layer polarization-maintaining DBS coating by a dual ion beam sputtering deposition (Dual-IBS) method. In order to solve a stress problem, an 18 layer special anti-reflection (AR) coating with similar physical thickness ratio was deposited on the backside. By stress compensation, the surface flatness RMS value of the DBS sample decreased from 0.341 λ (@632.8 nm) to 0.103 λ while beam splitting and polarization maintaining properties were almost kept unchanged. Further, we discussed the mechanism of film stress and stress compensation by equation deduction and found that total stress had a strong relationship with the total physical thickness and the ratio of layer materials.