• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.877-881
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• 2006

We obtained sputtering yields for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found to have less $24^{\sim}^30%$ sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated $Ga^+$ ion beam whose energies ranged from 10 keV to 14 keV. And $MgAl_2O_4$ layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that $MgAl_2O_4/MgO$ and MgO have secondary electron emission $coefficient({\gamma})$ values from 0.09 up to 0.12 for $Ne^+$ ion whose energies ranged from 50 eV to 200 eV.

• 열처리공학회지
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• 제24권2호
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• pp.77-81
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• 2011

Aluminum nitride (AlN) thin films were prepared by using nitrogen ion beam assisted reactive radio frequency (RF) magnetron sputtering on the glass substrates without intentional substrate heating. After deposition, the effect of nitrogen ion beam energy on the structural and optical properties of AlN films were investigated by x-ray diffraction (XRD), atomic force microscope (AFM) and UV-Vis. spectrophotometer, respectively. AlN films deposited with $N^+$ ion irradiation at 100 eV show the higher (002) peak intensity in XRD pattern than other films. It means that $N^+$ ion energy of 100 eV is the favorable condition for low temperature crystallization. AFM images also show that surface average roughness is increased from 1.5 to 9.6 nm with $N^+$ ion energy in this study. In an optical observation, AlN films which deposited by $N^+$ ion beam energy of 100 eV show the higher transmittance than that of the films prepared with the other $N^+$ ion beam conditions.

• 한국공작기계학회논문집
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• 제15권6호
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• pp.58-63
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• 2006

FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\Phi}10nm$ and smaller is available. Since general FIB uses very short wavelength and extremely high energy, it can directly make a micro structure less than $1{\mu}m$. As a result, FIB has been probability in manufacturing high performance micro devices and high precision micro structures. Until now, FIB has been commonly used as a very powerful tool in the semiconductor industry. It is mainly used for mask repair, device correction, failure analysis, IC error correction, etc. In this paper FIB-Sputtering and FIB-CVD characteristic analysis were carried out according to $Ga^+$ ion beam current that is very important parameter for minimizing the pattern size and maximizing the yield. Also, for FIB-Sputtering burr caused by redeposition of the substrate characteristic analysis was carried out.

• 한국진공학회지
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• 제6권S1호
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• pp.16-22
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• 1997

ion beam processing of materials for medical application has gained increasing interest in the last decade and the implantation of nitrogen into TI-6AI-4V to improve corrosive-wear performance is currently used for processing of total hip and knee joints. Oxides and nitrides of Ti, Zr, Al, Cr were deposited on TI-6AI-4V substrates by DC magnetron sputtering dual ion beam sputtering and ion beam assisted deposition. The cytotoxicity of these films were investigated by MTT method and showed comparable to untreated TI-6AI-4V Plasm-sprayed hydroxyapatite(HAp) coatings showed excellent cytotoxicity regardless of heat treatment. intermediate layer coatings of nitrides and oxides increased the bond strength of HAp to substrate by intrdducing chemical bond at interface. Heat treatment of HAp coatings also improved the chemical bond at interfaces and increased the bond strength of untreated TI-6AI-4V to 16.4 kg/$\textrm{cm}^2$ but still lower than 33.1 kg./$\textrm{cm}^2$ of ir oxide as a imtermediate layer caoting.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.75-75
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• 1999

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.779-780
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• 2011

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1518-1521
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• 2005

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its usage in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries This paper focus to apply the sputtering technology accumulated by experiments to 3d structure fabrication with high resolution. Therefore some verifications and discussions of the characteristics of FIB sputtering results according to focal length were described in this paper. And we suggested the definition of rectangular pattern profile and made the verifications of sputtering results based on definition of it.

• 한국정밀공학회지
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• 제29권4호
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• pp.479-486
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• 2012

Two of fundamental approaches that can be used to understand ion-solid interaction are Monte Carlo (MC) and Molecular Dynamic (MD) simulations. For the simplicity of simulation Monte Carlo simulation method is widely preferred. In this paper, basic consideration and algorithm of Monte Carlo simulation will be presented as well as simulation results. Sputtering caused by incident ion beam will be discussed with distribution of sputtered particles and their energy distributions. Redeposition of sputtered particles that are experienced refraction at the substrate-vacuum interface additionally presented. In addition, reflection of incident ions with reflection coefficient will be presented together with spatial and energy distributions. This Monte Carlo simulation will be useful in simulating and describing ion beam related processes such as Ion beam induced deposition/etching process, local nano-scale distribution of focused ion beam implanted ions, and ion microscope imaging process etc.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.679-685
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• 2014

For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk, $Si_3N_4/Si$, and Al/Si samples are used and observed the shapes milled from different sputtering rates, incident angles of $Ga^+$ ions bombardment, beam current, and target material. These conditions also can be influenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions of FIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damaged layers caused by bombarding of $Ga^+$ ions were observed on the surface of target materials. The simulated results were shown a little bit deviation with the experimental data due to relatively small sputtering rate on the sample surface. The simulation results showed about 10.6% tolerance from the measured data at 200 pA. On the other hand, the improved analytical model of damaged layer was matched well with experimental XTEM (cross-sectional transmission electron microscopy) data.

• 태양에너지
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• 제20권2호
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• pp.55-65
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• 2000

이온빔 스퍼터링을 이용하여 Indium tin oxide (ITO)박막을 증착하였다. Ar 가스만을 이용하여 플라즈마를 형성한 경우와 $O_2$를 첨가한 경우에 대해 기판온도를 상온에서 $200^{\circ}C$까지 증가시키면서 온도의 영향을 관찰하였으며 이온빔 에너지의 변화가 박막의 특성에 미치는 영향을 관찰하였다. Ar 이온만으로 증착한 ITO 박막은 domain 구조를 보였으며 Ar+$O_2$ 이온으로 증착한 경우 grain 구조를 나타내었다. Ar 이온만으로 증착된 ITO박막의 전기 비저항의 최소값은 $100^{\circ}C$ 기판온도에서 $1.5\times10^{-4}{\Omega}cm$ 값을 보였으며 산소 첨가의 경우에는 $150^{\circ}C$에서 $4.3\times10^{-4}{\Omega}cm$이었다. 모든 박막이 $100^{\circ}C$이상의 기판 온도에서 가시광 영역에서의 투과도는 80%이상의 값을 보였다.