• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.518-521
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• 2003

Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_{n}$O$_{x}$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of 1~9 $\times$ 10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.grown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.327-330
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• 2001

Phase intergrowth in BSCCO thin films have been investigated. It turned out from XRD analyses of these phases that molar fraction of each constituent phase in the intergrowth thin film can be exhibited as a function of substrate temperature and ozone pressure. Superconducting behavior of the intergrowth thin film is also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.855-860
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• 2001

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin film were fabricated by atomic layer-by -layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.t.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.269-270
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• 2006

이온빔 스퍼터를 사용하여 PC기판위에 $TiO_2$ 박막을 증착한 후 광학적 특성을 고찰하였다. 증착 전 어시스트 이온건을 사용하여 아르곤 플라즈마로 표면처리를 하였으며, Ti 박막을 $300{\AA}$정도로 증착한 다음, 그 위에 산소 반응스퍼터링 기법을 사용함으로써 $TiO_2$박막을 증착하였다. 표면처리에 의한 기판의 표면개질로 TI 버퍼층과의 막부착력을 높이고, 아르곤 산소의 분압비를 1로 고정하였을 때, $TiO_2$박막의 두께에 따라서 박막의 색상이 변화는 것을 관찰할 수 있었다. 또한, 아르곤과 산소의 분압 변화에 대한 의존성은 $TiO_2$박막의 색상과 투과율과 같은 광학적인 성질에 영향을 미치는 것을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.259-260
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• 2006

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method During the deposition, 90 mol% ozone gas of typical pressure of $1{\sim}9{\times}10^{-5}$ T orr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.351-352
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• 2006

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of $Bi_2O_3$. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of $Bi_2O_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.997-1002
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• 2002

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about 730$^{\circ}C$ and decreased linearly over about 730$^{\circ}C$ In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$\sub$2/O$\sub$3/. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of Bi$\sub$2/O$\sub$3/.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1230-1233
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.56.2-56
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• 2001

For the improvement of minimum sensing angular velocity of ring laser gyro, the influence of a low-scattering mirror application to laser resonator was investigated. Super polishing technique was employed for the fine mirror substrates of less than 1-${\AA}$-rms roughness. Mirror coating using ion-beam sputtering coating machine produced low-scattering mirror less than 30-ppm scattering. As a result of the mirror application to ring laser, the minimum sensing angular velocity of the gyro was improved down to about 0.1 deg/sec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.208-211
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• 2002

$Bi_2Sr_2CuO_x$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.