Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Epitaxial Growth of BSCCO Films by Leyer-by-Layer Deposition

순차 증착에 의한 BSCCO 박막의 에피택셜 성장

  • Published : 2001.10.01
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Abstract

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin film were fabricated by atomic layer-by -layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.t.

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References

  1. Journal of KIEEME v.10 no.5 Characteristics of Co-deposition for Bi-superconductor Thin Film Using Ion Beam Sputtering Method Y. P. Park;J. U. Lee
  2. Journal of KIEEME v.11 no.4 Layer-by-layer Deposition of BSCO Thin Film Using Ion Beam Sputtering Method Y. P. Park;J. U. Lee
  3. J. Crystal Growth v.102 Molecular Beam Epitaxial Growth of Layered Bi-Sr-Ca-Cu-O Compounds D. G. Schlom;A. F. Marchall;J. T. Sizemore;Z. J. Chen;J. N. Eckstein;I. Bozovic;K. E. von Dessonneck;J. S. Harris Jr;J. C. Bravman
  4. J. Crystal Growth v.115 In-situ Growth of Bi-Sr-Ca-Cu Oxide Superconducting Thin Films by Molecular Beam Epitaxy with a Pure Ozone Source Y. Kasai;S. Sakai
  5. Physica C v.217 Phase Stability and Structural Properties of $Bi_{2-x}Sr_{2-y}Cu_{1}O_{6+\gamma+E}$ Solid Solutions D. Sedmidubsky;E. Pollert