• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.94-100
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• 2013

The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.585-586
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• 2005

BSCCO thin films were fabricated by an ion beam sputtering method with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi2O3. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.6-9
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• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.26-26
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• 2000

High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.

• Bulletin of the Korean Chemical Society
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• v.17 no.11
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• pp.1004-1009
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• 1996

The interactions between a rod-coil liquid crystalline oligomer, ethyl 4-[4'-oxy-4-biphenylcarbonyloxy]-4'-biphenylcarboxylate with poly(ethylene oxide) (DP=12) (12-4) and LiCF3SO3 have been characterized by using Raman spectroscopy. Band assignments were made comparing the spectrum of 12-4 with those of the poly(ethylene glycol) monomethyl ether(PEGME) (Mw=550) and the ethyl-4'-hydroxybiphenyl-4-carboxylate (EHBPC), which are the coil and mesogen analogues, respectively. Analyzing characteristic bands of the 12-4-salt complex, we have found that the bands belonging to the coil and mesogenic units are changed in both intensities and frequencies. The spectral changes were interpreted from the viewpoint of the complexation between 12-4 and the Li+ ion. However, the possibility that the spectral changes in the mesogenic unit are not due to the complexation with the Li+ ion, but due to the conformational changes by the intercalation of nondissociated LiCF3SO3, is not ruled out.

• Bulletin of the Korean Chemical Society
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• v.22 no.5
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• pp.481-487
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• 2001

Surface films formed prior to bulk reduction of lithium have been studied at gold, platinum, and copper electrodes in rigorously dried propylene carbonate solutions using electrochemical quartz crystal microbalance (EQCM) and secondary ion mass spectrometry experiments. The results indicate that the passive film formation takes place at a potential as positive as about 2.0 V vs. Li/Li+ , and the passive film thus formed in this potential region is thicker than a monolayer. Quantitative analysis of the EQCM results indicates that electrogenerated lithium reacts with solvent molecules to produce a passive film consisting of lithium carbonate and other compounds of larger molecular weights. The presence of lithium carbonate is verified by SIMS, whereas the lithium compounds of low molecular weights, including lithium hydroxide and oxide, are not detected. Further lithium reduction takes place underneath the passive film at potentials lower than 1.2 V with a voltammetric current peak at about 0.6 V.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.37-41
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• 2021

We report on the formation of anodic aluminum oxide (AAO) film using sulfuric acid containing cerium salt. When the temperature of the sulfuric acid containing cerium salt changes from 5 ℃ to 20 ℃, the current density and the thickness growth rate increase. The surface morphology of the AAO film change according to the temperature of the electrolytes. And that affected the breakdown voltage and the plasma etch rate. The breakdown voltage per unit thickness was the highest at 15 ℃, and the plasma etch rate was the lowest at 10 ℃ at 2.80 ㎛/h.

• International Journal of Korean Welding Society
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• v.3 no.2
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• pp.29-39
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• 2003

The durability and reliability of thermal barrier coatings (TBCs) play an important role in the service reliability, availability and maintainability (RAM) of hot­section components in advanced turbine engines for aero and utility applications. Photostimulated luminescence spectroscopy (PSLS) and electrochemical impedance spectroscopy (EIS) are being concurrently developed as complimentary non­destructive evaluation (NDE) techniques for quality control and life­remain assessment of TBCs. This paper overviews the governing principles and applications of the luminescence and the impedance examined in the light of residual stress, phase constituents and resistance (or capacitance) in TBC constituents including the thermally grown oxide (TGO) scale. Results from NDE by PSLS and EIS are discussed and related to the microstructural development during high temperature thermal cycling, examined by using a variety of microscopic techniques including focused ion beam (FIB) in­situ lift­out (INLO), transmission and scanning transmission electron microscopy (TEM and STEM).

• Membrane and Water Treatment
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• v.14 no.2
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• pp.55-63
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• 2023

In this study, the influence of different IEMs (ion exchange membranes) to performance of the hypochlorite electrolysis unit with Cl₂ recovery stream was investigated. More specifically, Nafion 117-a representative cation exchange membrane (CEM)-and aminated polypheylene oxide (APPO)-an anion exchange membrane (AEM)-were installed in the hypochlorite electrolysis unit, and the performance and the energy efficiency of the units were evaluated and compared. Regardless of whether CEM (Nafion 117) or AEM (APPO) was installed, the rate of hypochlorite generation was increased (by up to 24.3% and 22.2% for Nafion 117 and APPO, respectively) compared with the unit without an IEM. On the other hand, the power efficiency and the optimum operation condition of hypochlorite production units seem to depend on the conductivity and stability of the installed IEM. As the result, between Nafion 117 and APPO, higher performance and efficiency were achieved with Nafion 117, due to excellent conductivity and stability of the membrane.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.33 no.1
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• pp.73-79
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• 2001

Stricter environmental demands have increased the need to replace conventional C/D bleaching sequence by chlorine-free sequence. Permanganate is well known as a powerful oxidant and have been used industrially in variable fields. However, it has considered to be difficult to use permanganate as a bleaching reagent because of its strong oxidative effect decreasing the viscosity of pulps extremely. We have tried to use permanganate as a bleaching reagent for KP under the mild condition and it was clear that pernanganate oxidized lignin remained in pulps selectively and increased pulp brightness decreasing K number of pulps with small degradation of cellulose. We have employed the neutral condition in the permanganate bleaching process in this study. In this case, permanganate was converted to manganese dioxide after bleaching reaction. The manganese dioxide is remained in the treated pulp fibers because of its insolublity in water. So it was required to reduction the manganese oxide to manganese ion by using reductants with acid. In this paper, we proposed to use oxalic acid as a reducing reagent converting manganese oxide to manganese ion after bleaching reaction. Oxalic acid plays the role as a reductant and a acid, so post-treatment after bleaching became to be easy by using oxalic acid. On the study using lignin model compounds, it was clear that permaganate react with phenols firstly, after that oxalic acid reduce the manganese oxide to manganese ion in the mixture of permanganate, phenols and oxalic acid. Several lignin model compounds ($\textit{p}$-hydroxybenzaldehyde, vanillin, syringaldehyde, veratraldehyde) are selected to elucidate the effect of substituents on reaction rate and its mechanism with permanganate including oxalic acid in this study. Except for veratraldehyde, the rate of oxidative degradation of phenolic compounds by permanganate with oxalic acid are higher than neutral condition. Especially, the degradation rate of $\textit{p}$-hydroxybenzaldehyde are strongly dependent on pH of reaction mixture. On the other hand, the degradation rate of veratraldehyde are decreased with decreasing pH and main degradation product is veratric acid. This result indicate that pH of bleaching liquor should be kept over 2 to degrade of non-phenolic lignin in the pulps effectively in permanganate bleaching.