• Title/Summary/Keyword: Ion oxide

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Conductivity properties of ion conducting polymer electrolyte based on poly(ethylene oxide) (이온전도성 poly(ethylene oxide)고분자전해질의 전도특성)

  • 김종욱;문성인;진봉수;구할본;윤문수
    • Electrical & Electronic Materials
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    • v.8 no.4
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    • pp.487-494
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    • 1995
  • The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li secondary battery. We investigated the effects of lithium salts, plasticizer addition, temperature dependence of conductivity and electrochemical stability window of polyethylene oxide(PEO) electrolytes. PEO electrolyte completed with LiCIO$\_$4/ shows the better conductivity than the others. PEO-LiCIO$\_$4/ electrolyte, when EO/Li$\^$+/ ratio is 8, showed adequate conductivity around room temperature. By adding propylene carbonate and ethylene carbonate to PEO-LiCIO$\_$4/ electrolyte, its conductivity was higher than that of PEO-LiCIO$\_$4/ without those. Also PEO$\_$8/LiCIO$\_$4/ electrolyte remains stable up to 4.5V vs. Li/Li.

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Effect of Concrete Coating Materials for the Improvement of Concrete Durability (콘크리트 표면도장에 의한 내구성증진 효과)

  • 문한영;김성수;안태송;김홍삼
    • Proceedings of the Korea Concrete Institute Conference
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    • 1999.04a
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    • pp.433-436
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    • 1999
  • Long-term durability of the reinforced concrete structures exposed to marine environment deteriorates seriously by the attack of the chloride ion from see water results in corrosion of steel reinforcement in concrete. Their coating effect is aluminum oxide-isocyanate-based coating material, resistance of chloride penetration, carbonation and freezing and thawing resistance were compared to acryl-based coating material and sealer type o waterproofing material. Aluminum oxide-isocyante-based and acryl-based coating material show higher resistance to chloride penetration and carbonation than the sealer type do waterproofing material and aluminum oxide-isocyanate-based coating resist about 99% of chloride penetration. Resultants to the accelerated test for freezing and thawing, coating concrete show higher resistance than non-coating concrete, respectively.

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C-V Characterization of Plasma Etch-damage Effect on (100) SOI (Plasma Etch Damage가 (100) SOI에 미치는 영향의 C-V 특성 분석)

  • Jo, Yeong-Deuk;Kim, Ji-Hong;Cho, Dae-Hyung;Moon, Byung-Moo;Cho, Won-Ju;Chung, Hong-Bay;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.8
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    • pp.711-714
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    • 2008
  • Metal-oxide-semiconductor (MOS) capacitors were fabricated to investigate the plasma damage caused by reactive ion etching (RIE) on (100) oriented silicon-on-insulator (SOI) substrates. The thickness of the top-gate oxide, SOI, and buried oxide layers were 10 nm, 50 nm, and 100 nm, respectively. The MOS/SOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching. The measured C-V curves were compared to the numerical results from corresponding 2-dimensional (2-D) structures by using a Silvaco Atlas simulator.

Durability Improvement of Electrochromic Tungsten Oxides Films

  • Yang, J.Y.;Kim, J.W.;Kang, G.H.;K.D.Ko;Lee, G.D.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.157-157
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    • 1999
  • Electrochromic tungsten oxide films were prepared by the electron beam deposition, and the dependence of the electrochemical stability and the optical properties on the titanium concentration, and on the annealing temperature, that was investigated. coloring and bleaching experiments were repeated by cyclic voltammetry in a propylene carbonate solution of LiClO4. Spectrometry was used to assess the stability of the transmittance in the degraded films. Tungsten oxide films with titanium contents of about 10~15 mol% were found to be most stable, undergoing the least degradation during the repeated for coloring and bleaching cycles. The reason for this small amount of degradation was the reduction of lithium ion trapping sites in the films, which results in an increased durability. Tungsten oxide films with titanium contents of about 20 mol% were annealed at 20$0^{\circ}C$ for 1 hour, and this results showed that durability of films were increased.

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${\gamma}$-FIB를 이용한 산소 유량에 따른 ITO (Indium Tin Oxide)의 Energy Band Structure 측정

  • Lee, Gyeong-Ae;Kim, Dong-Hae;Gwon, Gi-Cheong;Eom, Hwan-Seop;Choe, Eun-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.191-191
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    • 2011
  • 최근 투명전극 연구는 태양전지 및 디스플레이, LED 등 많은 분야에서 응용되며 또한 기술 개발이 활발하다. 그 중 전기 전도도가 우수하면서 밴드갭이 2.5 eV 이상으로 가시광 영역에서 투명하기 때문에 디스플레이의 투명전극으로 ITO (Indium Tin Oxide)가 많이 사용되고 있다. 본 실험에서는 RF magnetron sputtering법을 이용한 ITO의 증착시 산소 유량을 달리하여 제작한 박막의 Energy Band Structure를 ${\gamma}$-FIB system을 이용하여 측정하였다. ITO에 이온화 에너지가 24.5 eV인 He Ion source를 주사하였을 때 Auger self-convolution을 통해 이차전자의 운동 에너지 분포를 구하고, 이를 통해 ITO 내의 Energy Band Structure를 실험적으로 측정하였다.

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Effect of temperature and oxygen partial pressure on the growth and development of Cu2O nanorods by radio frequency magnetron sputtering

  • You, Jae-Lok;Jo, Kwang-Min;Kim, Se-Yoon;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.102-103
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    • 2013
  • As an important p-type semiconductor metal oxide with a narrow band gap (1.2 - 2.6eV), copper oxide (Cu2O) has been studied because of its various applications as material for heterogeneous catalysts, gas sensors, optical switch, lithium-ion electrode materials, field emission devices, solar cells. The fundamental properties of oxide-semiconductor can be greatly affected by the surface morphology, size, geometry and spatial orientation.

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Neural Network Models of Oxide Film Etch Process for Via Contact Formation (Via Contact 형성을 위한 산화막 식각공정의 신경망 모델)

  • 박종문;권성구;박건식;유성욱;배윤구;김병환;권광호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.1
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    • pp.7-14
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    • 2002
  • In this paper, neutral networks are used to build models of oxide film etched In CHF$_3$/CF$_4$ with a magnetically enhanced reactive ion etcher(MERIE). A statistical 2$\^$4-1/ experimental design plus one center point was used to characterize relationships between process factors and etch responses. The factors that were varied include radio frequence(rf) power, pressure, CHF$_3$ and CF$_4$ flow rates. Resultant 9 experiments were used to train neural networks and trained networks were subsequently tested on its appropriateness using additionally conducted 8 experiments. A total of 17 experiments were thus conducted for this modeling. The etch responses modeled are dc bias voltage, etch rate and etch uniformity A qualitative, good agreement was obtained between predicted and observed behaviors.

Evaluation of Oxidation Ozone for Superconductor Thin Film Growth (초전도 박막 제작을 위한 산화 오존의 평가)

  • Lim, Jung-Kwan;Park, Yong-Pil;Lee, Hee-Kab
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.04a
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    • pp.35-38
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    • 2004
  • Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

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산소 플라즈마로 처리한 전도성 투명 BZO(ZnO:B)박막에 대한 전기적 특성

  • Gang, Jeong-Uk;Yu, Ha-Jin;Son, Chang-Gil;Jo, Won-Tae;Park, Sang-Gi;Choe, Eun-Ha;Gwon, Gi-Cheong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.477-477
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    • 2010
  • 태양전지용 TCO(Transfer Conductivity Oxide)는 가시광선 영역에서 높은 광 투과도(optical transmittance), 낮은 저항(resistivity), 우수한 박막 표면 거칠기(roughness) 등의 특성이 요구된다. 현재 가장 많이 사용되는 투명전극은 ITO(Indium Tin Oxide)가 보편적이다. 하지만 ITO에 사용되는 원료 재료인 In이 상대적으로 열적 안정성이 낮아 제조과정에서 필수적으로 수반되는 열처리가 제한적이며, 높은 원료 단가로 인하여 경제적인 측면에서 약점으로 지적되고 있다. 이러한 ITO 투명전극의 대체 재료로서 최근 ZnO 박막의 연구가 활발히 이루어지고 있다. MOCVD(Metal-Organic chemical vapor deposition)로 Soda lime glass 기판위에 약 900nm의 두께로 증착한 BZO(Boron-zinc-oxide)박막을 수소 플라즈마 처리공정을 한 뒤 산소 플라즈마를 이용하여 재처리 하였다. 산소 플라즈마 처리 공정은 RIE(Reactive Ion Etching)방식의 플라즈마 처리 장치를 사용하였고 공정 조건은 13.56 MHz의 RF주파수를 사용하여 RF 전력, 압력, 기판 온도 등을 변화시켜 BZO 박막의 전기적 특성을 측정 및 분석하였다.

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