Effect of temperature and oxygen partial pressure on the growth and development of Cu2O nanorods by radio frequency magnetron sputtering

  • You, Jae-Lok (School of Materials Science and Engineering, Kyung-Pook National University) ;
  • Jo, Kwang-Min (School of Materials Science and Engineering, Kyung-Pook National University) ;
  • Kim, Se-Yoon (School of Materials Science and Engineering, Kyung-Pook National University) ;
  • Lee, Joon-Hyung (School of Materials Science and Engineering, Kyung-Pook National University) ;
  • Kim, Jeong-Joo (School of Materials Science and Engineering, Kyung-Pook National University) ;
  • Heo, Young-Woo (School of Materials Science and Engineering, Kyung-Pook National University)
  • Published : 2013.05.30

Abstract

As an important p-type semiconductor metal oxide with a narrow band gap (1.2 - 2.6eV), copper oxide (Cu2O) has been studied because of its various applications as material for heterogeneous catalysts, gas sensors, optical switch, lithium-ion electrode materials, field emission devices, solar cells. The fundamental properties of oxide-semiconductor can be greatly affected by the surface morphology, size, geometry and spatial orientation.

Keywords