• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.109-112
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• 2016

We demonstrated an alternative electrically controlled birefringence liquid crystal (ECB-LC) system with ion beam (IB)-irradiated yttrium gallium oxide (YGaO) alignment films using a sol-gel process. The surface roughness of the films was dependent on the annealing temperature; aggregated particles on surface were observed at lower annealing temperatures, whereas a smooth surface could be obtained with higher annealing temperatures. Higher transmittance in the visible region was observed at higher annealing temperatures. The film had an amorphous crystallographic state irrespective of the annealing temperature. Furthermore, ECB-LC cell with our IB-irradiated YGaO film yielded faster response time when compared to ECB-LC cell with rubbed polyimide. Considering the fast response time and high transmittance, the IB-irradiated YGaO-base LC system is a powerful alternative application for the liquid crystal display industry.

• Journal of the Optical Society of Korea
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• 제16권1호
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• pp.80-84
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• 2012

A high reflectance mirror, which has very low absorption and scattering loss, was coated onto a crystalline substrate by ion beam sputtering and then annealed at $450^{\circ}C$. We carefully selected the mirror coating material, and designed the high reflectance mirror, in order to avoid UV degradation which comes from the He-Ne plasma. We measured the surface roughness of the Zerodur substrate using phase shift interferometry and atomic force microscopy, and compared it with the TIS scattering of the mirror. The cavity ring-down method was used to measure the absorption of the mirror, and the thin film structure was correlated to its results. We also compared the optical properties of coated mirrors before and after annealing.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.969-975
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• 2002

Thin film transistors(TFT) were made based on the polycrystalline Si (poly-Si) crystallized by sequential lateral solidification(SLS) method. The electrical characteristics of the devices were analyzed. n-type TFTs did not show a superior characteristics compared to p-type TFTs. We analyzed the causes of the failure by focused ion beam(FIB) analysis and automatic spreading resistance(ASR) measurement, to study the structural integrity and the doping distribution, respectively. FIB showed no structural problems but it revealed a non-intermixed layer in the contact holes between the polysilicon and the aluminum electrode. ASR analyses on poly-Si layer with various doping concentrations and activation temperatures showed that the inadequately doped areas were partially responsible for the inferior behavior of the whole device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.97-100
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• 2000

Bi$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/. Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.57-62
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• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.469-472
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• 2003

The nematic liquid crystal (NLC) aligning capabilities using a-C:H thin film deposited at the three kinds of rf bias condition were investigated. A high pretilt angle of about $11^{\circ}$ by the ion beam alignment method was observed on the a-C:H thin film (polymer-like carbon) deposited at 1W rf bias condition, and the low pretilt angle of the NLC was observed on the a-C:H thin film(diamond-like carbon) deposited at rf 30W and 60W bias condition. Consequently, the high NLC pretilt angle and the good aligning capabilities of LC alignment by the IB alignment method on the a-C:H thin film deposited at 1W rf bisa condition can be achieved.

• Applied Microscopy
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• 제46권1호
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• pp.14-19
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• 2016

Currently, focused ion beams (FIB) are widely used for specimen preparation in atom probe tomography (APT), which is a three-dimensional and atomic-scale compositional analysis tool. Specimen preparation, in which a specific region of interest is identified and a sharp needle shape created, is the first step towards successful APT analysis. The FIB technique is a powerful tool for site-specific specimen preparation because it provides a lift-out technique and a controllable manipulation function. In this paper, we demonstrate a general procedure containing the crucial points of FIB-based specimen preparation. We introduce aluminum holders with moveable pin and an axial rotation manipulator for specimen handling, which are useful for flipping and rotating the specimen to present the backside and the perpendicular direction. We also describe specimen preparation methods for nanowires and nanopowders, using a pick-up method and an embedding method by epoxy resin, respectively.

• 전자공학회논문지D
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• 제35D권7호
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• pp.102-108
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• 1998

A new 1*4 optical waveguide power divider is proposed and fabricated. It consists of a 1*4 multi-branch structure with a beam separator and two beam expanders that can control the splitting ratios between the output ports. The proposed optical waveguide power divider is designed by employing the two dimensional finite difference beam propagation method and is fabricated by a reactive ion etching method. The splitting ratio of fabricatd device is 25.0 : 25.7 : 25.3 : 24.0 for TE mode and 25.7 : 25.2 : 24.1 : 25.0 for TM mode. Comapred with the conventional Y-branch structure, the proposed structure shortens the length of a 1*N divider by the factor 3. Thus it reduces the total propagation loss and the total radiation loss at the branch points. furthermore, the splitting ratios between the output ports may be controlled in this structure for some special applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.317-317
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• 2011

Enhanced ICRF (Ion Cyclotron Range of Frequency) ion heating of H-mode D(H) plasma will be tried in 2011 KSTAR experimental campaign. Minority heating is a main ion heating scheme in the ICRF. Its efficiency increases as the hydrogen minority ratio increases in deuterium plasmas. And it should be sustained at a lower level than the critical minority ratio. Consequently, it is important to elevate the critical ratio to maximize ion heating and it is possible by increasing the ion temperature or parallel wave number (k${\parallel}$) of the antenna. Increasing the k${\parallel}$ is not a good approach since the coupling efficiency decreases exponentially with regard to k${\parallel}$ as well. So the remaining method is to increase ion temperature by using NB (Neutral Beam). Ion heating fraction of NB increases as the electron temperature increases. Therefore, we will try to heat electron by using ECH together with NB ion heating before ICRF power injection. The ICRF heating efficiency will be compared with respect to several NB+ECH+ICRF heating combinations through several diagnostics such as XICS (Xray Imaging Crystal Spectroscopy), CES (Charge Exchange Spectroscopy) and neutron measurement. The theoretical background and the experimental results will be presented in more detail in the conference.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.116-116
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• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$ film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer.