• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.313-320
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• 1995

We investigated the preferred orientation, electrical and magnetic properties of the Mn-Zn ferrite thin films deposited on SiO2/Si(100) by ion beam sputtering. The Cu-added Mn-Zn ferrite thin films had a preferred orientation of (111) with a weak orientation, (311). While the Zn-added one had a strong (111) preferred orientation. The saturation magnetization of the Cu- or Zn-doped Mn-Zn ferrite films increased with increasing substrate temperature (Ts) due to the increase of grain size and the enhancement of crystallinity. For the same reason the coercivity of Cu- or Zn-doped Mn-Zn ferrite films deposited at low Ts increased with increasing Ts, but those of the films deposited at high Ts slightly decreased not only because the defect density of the films decreases but because more grains have multi-domains with increasing Ts. The resistivity of Cu- or Zn-added Mn-Zn ferrite thin fims measured by complex impedance method decreased with increasing Ts due to the ehhancement of crystallinity as well as due to the increase of grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.94-97
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• 2004

In this paper, we investigate fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C:H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film An excellent voltage-transmittance (V-T) and response time curve of the IB-aligned FFS-LCD was observed with oblique IB exposure on the DLC thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IB exposure on the DLC thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.16-19
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• 2009

We have studied the liquid crystal alignment properties for various alignment methods on the homogeneous polyimide surface. Suitable liquid crystal alignment for one-side alignment cell on the polyimide surface by all alignment method was observed. Highly pre-tilt angle of the NLC for both-side rubbing cell was measured. But, low pre-tilt angle of the NLC for one-side ion beam and UV irradiation cell was observed. We consider that the pre-tilt angle of NLC for one-side ion beam and UV irradiation on the PI surface is lower than that of the PI surface with rubbing. Also, the suitable transmittance-voltage curves for the one-side rubbing TN-LCD on the PI surface with one-side UV irradiation were measured. Also, good response time characteristics of the one-side rubbing TN-LCD on the polyimide surface with one-side UV irradiation can be measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.346-349
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• 2001

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of diamond like carbon (DLC) thin film. A high pretilt angle of about $4^{\circ}$ was measured by ion beam(IB) exposure on the DLC thin film surface. A good LC alignment was observed by the IB alignment method on the DLC thin film surface at annealing temperature of $200^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of $220^{\circ}C$. Consequently, the high NLC pretilt angle and the good thermal stability of LC alignment can be achieved by the IB alignment method on the DLC thin film surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1019-1022
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• 2003

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film as working gas at 30W rf bias condition. A high pretilt angle of about 5$^{\circ}$ by ion beam(IB) exposure on the a-C:H thin film surface was measured. A good LC alignment by the IB alignment method on the a-C:H thin film surface was observed at annealing temperature of 250$^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of 300$^{\circ}C$. Consequently, the high LC pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C:H thin film surface as working gas at 30W rf bias condition can be achieved.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.154-157
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• 2007

The austenite phase observed in low carbon HSLA steels is well known to be decomposed to various bainitic microstructures, such as granular bainite, acicular ferrite and bainitic ferrite during continuous cooling process. These bainitic microstructures have been usually identified by using either scanning electron microscope (SEM) or transmission electron microscope (TEM). However, SEM and TEM images do no exactly coincide, because of the quite different sample preparation method in SEM and TEM observations. These conventional analysis method is, thus, not suitable for characterization of the complex bainitic microstructure. In this study, focused ion beam (FIB) technique was applied to make site-specific TEM specimens and to identify the 3-dimensional grain morphologies of the bainitic microstructure. The morphological feature and grain boundary characteristics of each bainitic microstructure were exactly identified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.346-349
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• 2001

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of diamond like carbon (DLC) thin film. A high pretilt angle of about 4$^{\circ}$ was measured by ion beam(IB) exposure on the DLC thin film surface. A good LC alignment was observed by the IB alignment method on the DLC thin film surface at annealing temperature of 200$^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of 220$^{\circ}C$ . Consequently, the high NLC pretilt angle and the good thermal stability of LC alignment can be achieved by the IB alignment method on the DLC thin film surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.419-422
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• 2002

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a diamond like carbon (DLC) thin film. A high pretilt angle of about $3.5^{\circ}$ by ion beam(IB) exposure on the DLC thin film surface was measured. A good LC alignment by the IB alignment method on the DLC thin film surface was observed at annealing temperature of $200^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of $220^{\circ}C$. Consequently, the high NLC pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the DLC thin film surface can be achieved.

• Journal of the Korean institute of surface engineering
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• v.27 no.4
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.236-243
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• 2009

Proton Engineering Frontier Project (PEFP) has supplied the metal ions to users by using an installed metal ion implanter of 120 keV. At present a feasibility study is being performed for a cobalt ion implantation. For a cobalt ion extraction we studied to sustain the high temperature($648^{\circ}C$) for metal ions vaporization from a cobalt chloride powder by using an alumina crucible in the ion source. The temperature condition of the crucible was satisfied with the plasma generation at the arc current of 120V and EHC power of 250W. The extracted beam current of $Co^+$ ions was dependent on the arc current in the plasma. The maximum beam current was $100{\mu}A$ at 0.18A of the arc current. The 3 peak currents of the extracted ions such as $Co^+$, $CoCl^+$ and $Cl^+$ were obtained by adjusting a mass analyzing magnet and the $Co^+$ ion beam peak current fraction as around 70% in the sum of the peak currents. The fluence of the implanted cobalt ions at the $10{\mu}A$ of the beam current and 90 minutes of the implantation time into an aluminum sample as measured around $1.74{\times}10^{17}#/cm^2$ by a quantitative analysis method of RBS (Rutherford Backscattering Spectrometry).