• 한국전기전자재료학회논문지
• /
• 제26권10호
• /
• pp.754-759
• /
• 2013

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.

• 한국진공학회지
• /
• 제5권3호
• /
• pp.258-262
• /
• 1996

d.c.magnetron sputtering 방법으로 제작된 Fe/[NiFe/Cu] 다층박막을 Fe 기저층의 두께, 적층횟수 및 열처리 온도 변화에 따라 자기저항비가 계면 거칠기 및 우선 배향에 미치는 영향에 대하여 조사하였다. Fe 기저층의 두께가 증가함에 따라 (200) 우선 배향의 세기라 증가하였으며, 자기저항비는 Fe70$\AA$의 두께어서 최대값 4.7%를 보이며 이때 자장감응도도 최대를 나타낸다. Fe 기저층의 두께를 70$\AA$ 으로 고정시키고 적층횟수를 변화시켰을 때 40층에서 최대값 5.3%를 보였다. 열처리 온도에 따른 자기저항비는 $300^{\circ}C$이하에서는 커다란 변화가 없으며, $300^{\circ}C$이상에서는 크게 감소하였는데, 이는 Cu의 확산에 의한 상자성 혼합층의 증가와 반강자성석으로 결함된 자성층간의 배열의 변화가 그 원인이다.

• 한국재료학회지
• /
• 제22권11호
• /
• pp.626-630
• /
• 2012

The properties of SOFC unit cells manufactured using the decalcomania method were investigated. SOFC unit cell manufacturing using the decalcomania method is a very simple process. In order to minimize the ohmic loss of flattened tube type anode supports of solid oxide fuel cells(SOFC), the cells were fabricated by producing an anode function layer, YSZ electrolyte, LSM electrode, etc., on the supports and laminating them. The influence of these materials on the power output characteristics was studied when laminating the components and laminating the anode function layer between the anode and the electrolyte to improve the output characteristics. Regarding the performance of the SOFC unit cell, the output was 246 $mW/cm^2$ at a temperature of $800^{\circ}C$ in the case of not laminating the anode function layer; however, this value was improved by a factor of two to 574 $mW/cm^2$ due to the decrease of the ohmic resistance and polarization resistance of the cell in the case of laminating the anode function layer. The outputs appeared to be as high as 574 and 246 $mW/cm^2$ at a temperature of $800^{\circ}C$ in the case of using decalcomania paper when laminating the electrolyte layer using the in dip-coating method; however, the reason for this is that interfacial adhesion was improved due to the dense structure, which leads to a thin thickness of the electrolyte layer.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.8-9
• /
• 2006

Hafnium oxide ($HfO_2$) thin films were deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$. Prior to the deposition of $HfO_2$ films, a thin Hf ($10\;{\AA}$) metal layer was deposited. Deposition temperature of $HfO_2$ thin film was $350^{\circ}C$ and its thickness was $150\;{\AA}$. Samples were then annealed using furnace heating to temperature ranges from 500 to $900^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Thermally evaporated $3000\;{\AA}$-thick AI was used as top electrode. In this work, We study the interface characterization of $HfO_2$/Hf/Si MOS capacitor depending on annealing temperature. Through AES(Auger Electron Spectroscopy), capacitance-voltage (C-V) and current-voltage (I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf meta1 layer in our structure effective1y suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.281.1-281.1
• /
• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• 멤브레인
• /
• 제11권2호
• /
• pp.83-88
• /
• 2001

본 연구에서 상업용 폴리설폰 한외여과 중공사막을 지지체로 사용하여 저압 정수용 역삼투압막 제조시 막표면에서 feed의 큰 전단응력에 견딜 수 있도록 도포층과 지지층의 결합력을 증가시키는 전처리 방법을 확립하였다. 확립한 전처리 공정에서 지지막과 친화력이 좋으면서 도포층을 이루는 반응물과 반응성이 있는 글루탈알데히드와 촉매역할을 하는 염산 혼합 수용액으로 지지막을 전처리하면 이들 글루탈알데히드는 지지막 표면 및 기공 벽에 균일하게 분포되어 이후 표면중합법에 의해 형성된 도포층을 이루는 일부 반응물과 화학적으로 결합 되어 지지체와 도포층간에 강한 결합력을 제공한다. 전처리공정 없이 제조한 중공사 역삼투압막은 투과 후 5시간 이내에 feed의 큰 전단응력에 의해 도포층의 분리 파괴가 일어났으나 본 연구에서 확립한 방법으로 전처리하여 제조한 중공사막은 장시간 사용에도 우수한 막성능이 지속되었다.

• Journal of Welding and Joining
• /
• 제13권3호
• /
• pp.134-146
• /
• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• 한국진공학회지
• /
• 제9권4호
• /
• pp.335-340
• /
• 2000

코발트실리사이드형성에 있어서 Capping layer로써의 Ti의 역할에 대한 연구를 수행하였다. 실리콘 산화막이 제거된 Si(100)기판과 $H_2SO_4$에 의한 chemical oxide를 형성한 Si(100)기판 위에 Co와 Ti를 증착한 후 열처리 온도 증가에 따른 계면반응과 상변화 등의 미세구조와 면저항 특성의 변화를 four point prove, XRD, TEM, SIMS등의 분석을 통하여 TiN capping, capping layer가 없는 경우에 대하여 비교하였다. 실리콘 산화막이 제거된 Si 기판 상에서 Ti capping의 경우 TiN capping, capping layer가 없는 경우보다 높은 온도에서 $CoSi_2$상이 형성되었으며, chemical oxide가 형성된 Si 기판 상에서는 Ti capping의 경우 코발트 실리사이드 박막을 형성 할 수 있었다. 이것은 capping layer인 Ti가 1차 RTA(Rapid Thermal Annealing)동안 Si 기판 방향으로 확산 침투하여 Co와 Si 사이에 존재하는 실리콘 산화막을 분해하는 역할을 하기 때문이다.

• 센서학회지
• /
• 제33권4호
• /
• pp.224-229
• /
• 2024

Quantum dot light-emitting diodes (QD-LEDs) are emerging as next-generation displays owing to their high color purity, wide color gamut, and solution processability. Enhancing the efficiency of QD-LEDs involves preventing non-radiative recombination mechanisms, such as Auger and interfacial recombination. Generally, ZnO serves as the electron transport layer, which is known for its higher mobility compared to that of organic semiconductors and can lead to excessive electron injection. Some of the injected electrons pass through the quantum dot emissive layer and undergo non-radiative recombination near or within the organic hole transport layer (HTL), resulting in HTL degradation. Therefore, the implementation of electron blocking layers (EBLs) is essential; however, studies on all-solution-processed inverted InP QD-LEDs are limited. In this study, poly(9-vinylcarbazole) (PVK) is introduced as an EBL to mitigate HTL degradation and enhance the emission efficiency of inverted InP QD-LEDs. Using a single-carrier device, PVK was confirmed to effectively inhibit electron overflow into the HTL, even at extremely low thicknesses. The optimization of the PVK thickness also ensured minimal disruption of the hole-injection properties. Consequently, a 1.5-fold increase in the maximum luminance was achieved in the all-solution-processed inverted InP QD-LEDs with the EBL.

• 한국자기학회지
• /
• 제10권2호
• /
• pp.62-66
• /
• 2000

비자성사이층 Cu 두께(30 $\AA$, 35 $\AA$, 40 $\AA$)를 달리한 glass(7059)/N $i_{81}$$Fe_{19}$(70 $\AA$)/Co(10 $\AA$)/Cu(t $\AA$)/Co(15 $\AA$)/N $i_{81}$$Fe_{19}$(35 $\AA$)N $i_{25}$M $n_{75}$(250 $\AA$)Ta(50 $\AA$) 스핀밸브박막(spin valve film; SVF) 을 dc 스퍼터링으로 제작하였다 이 시편을 진공 열처리 한 후 자유자성층의 상호결합세기(interlayer coupling field; $H_{inf}$ )와 보자력(coercivity; $H_{sf}$ )에 대한 열처리 순환횟수 및 비자성층 두께 의존성에 관련한 자기저항특성을 조사했다. Cu 두께가 35 $\AA$인 SVF의 경우에 교환결합세기(exchange coupling field; $H_{ex}$)가 620 Oe, 보자력( $H_{c}$)이 280 Oe 및 자기저항(magnetoresistance; MR)비가 2.5%를 보였다. $H_{inf}$ 와 $H_{cf}$ 는 모든 SVF가 열처리 순환 횟수에 따라 증가하는 경향을 보이다가 일정한 값으로 안정화되며 Cu 35 $\AA$인 경우는 열처리 순환 횟수 15회 이후에 각각 120 Oe 및 75 Oe를 유지한다. $H_{inf}$ 및 $H_{cf}$ 가 열처리 순환횟수 증가에 따라 증가하는 것은 열처리 효과에 의해 Cu층과 Co층의 계면섞임 증대에 의한 유효한 Cu층 두께 감소에 기인한다. Cu가 적정둘레 35 $\AA$ 보다 더 얇아지거나 두꺼워지면 계면섞임에 의한 효과는 각각 더 증대하거나 둔화되는 것으로 분석된다.으로 분석된다..