Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improvement on the Passivation Effect of PA-ALD Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells

결정질 실리콘 태양전지를 위한 PA-ALD Al2O3 막의 패시베이션 효과 향상 연구

  • Song, Se Young (Graduate School of Green Energy Technology, Chungnam National University) ;
  • Kang, Min Gu (Solar Energy Department, Korea Institute of Energy Research) ;
  • Song, Hee-Eun (Solar Energy Department, Korea Institute of Energy Research) ;
  • Chang, Hyo Sik (Graduate School of Green Energy Technology, Chungnam National University)
  • 송세영 (충남대학교 녹색에너지기술전문대학원 녹색에너지기술학과) ;
  • 강민구 (한국에너지기술연구원 태양에너지연구단) ;
  • 송희은 (한국에너지기술연구원 태양에너지연구단) ;
  • 장효식 (충남대학교 녹색에너지기술전문대학원 녹색에너지기술학과)
  • Received : 2013.09.16
  • Accepted : 2013.09.24
  • Published : 2013.10.01
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Abstract

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.

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References

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