• Journal of the Korean Society for Heat Treatment
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• v.12 no.1
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• pp.47-54
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• 1999

Microstructure of Al-Si coated PWA 1426 alloy was studied. Diffusion coated specimens were heat treated for 4hr at $870{\sim}1087^{\circ}C$ and then were examined the changes of microstructure and interfacial compound by optical microscopy, SEM and EDS. According to the result of EDS, it is supposed that the coated layer was composed of $Ni_2Al_3$. When diffusion treatment was conducted at $1087^{\circ}C$, coated layer varied from $Ni_2Al_3$ to NiAl phase and composed of mixed, denuded and inter-diffusion layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.400.1-400.1
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• 2016

Interfacial engineering approaches as an efficient strategy for improving the power conversion efficiencies (PCEs) of inverted polymer solar cells (iPSCs) has attracted considerable attention. Recently, polymer surface modifiers, such as poly(ethyleneimine) (PEI) and polyethylenimine ethoxylated (PEIE), were introduced to produce low WF electrodes and were reported to have good electron selectivity for inverted polymer solar cells (iPSCs) without an n-type metal oxide layer. To obtain more efficient solar cells, quantum dots (QDs) are used as effective sensitizers across a broad spectral range from visible to near IR. Additionally, they have the ability to efficiently generate multiple excitons from a single photon via a process called carrier multiplication (CM) or multiple exciton generation (MEG). However, in general, it is very difficult to prepare a bilayer structure with an organic layer and a QD interlayer through a solution process, because most solvents can dissolve and destroy the organic layer and QD interlayer. To present a more effective strategy for surpassing the limitations of traditional methods, we studied and fabricated the highly efficient iPSCs with mono-layered QDs as an effective multi-functional layer, to enhance the quantum yield caused by various effects of QDs monolayer. The mono-layered QDs play the multi-functional role as surface modifier, sub-photosensitizer and electron transport layer. Using this effective approach, we achieve the highest conversion efficiency of ~10.3% resulting from improved interfacial properties and efficient charge transfer, which is verified by various analysis tools.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.47-52
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• 2008

As the packing density of IC devices gets ever higher, the thickness of the gate $SiO_2$ layer of the MOS devices is now required to be reduced down to 1 nm. For such a thin $SiO_2$ layer, the MOS device cannot operate properly because of tunneling current and threshold voltage shift. Hence there has been much effort to develop new dielectric materials which have higher dielectric constants than $SiO_2$ and is free from such undesirable effects. In this work, the physical and electrical characteristics of ALD $ZrO_2$ film have been studied. After deposition of a thin ALD $ZrO_2$ film, it went through thermal treatment in the presence of argon gas at $800^{\circ}C$ for 1 hr. The characteristics of morphology, crystallization kinetics, and interfacial layer of $Pt/ZrO_2/Si$ samples have been investigated by using the analyzing instruments like XRD, TEM and C-V plots. It has been found that the characteristics of the $Pt/ZrO_2/Si$ device was enhanced by the thermal treatment.

• Corrosion Science and Technology
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• v.7 no.1
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• pp.40-44
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• 2008

Passive metal forms an interfacial diffuse layer on the surface of passive film by its reaction with $H^+$ or $OH^-$ ions in solution depending on solution pH. There is a critical pH, called pH point of iso-selectivity ($pH_{pis}$) at which the nature of the diffuse layer is changed from the anion-permeable at pH<$pH_{pis}$ to the cation-permeable at pH>$pH_{pis}$. The $pH_{pis}$ for a passivated Fe was determined by examining the effects of pH on the thickness of passive film and on the dissolution reaction occurring on the passive film under a gavanostatic reduction in borate-phosphate buffer solutions at various pH of 7~11. The steady-state thickness of passive film formed on Fe showed the maximum at pH 8.5~9, and further the nature of film dissolution reaction was changed from a reaction producing $Fe^{3+}$ ion at $pH\leq8.5$ to that producing $FeO_2{^-}$ at $pH\geq9$, suggesting that the $pH_{pis}$ of Fe is about pH 8.5~9. In addition, the passive film formed at pH 8.5~9, $pH_{pis}$, was found to be the most protective with the lowest defect density as confirmed by the Mott-Schottky analysis. Pitting potential was decreased with increasing $Cl^-$ concentration at $pH\leq8.5$ due probably to the formation of anion permeable diffuse layer, but it was almost constant at $pH\geq9$ irrespective of $Cl^-$ concentration due primarily to the formation of cation permeable diffuse layer on the film, confirming again that $pH_{pis}$ of Fe is 8.5~9.

• 한국전산유체공학회:학술대회논문집
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• 1995.10a
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• pp.126-131
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• 1995

In this paper we study steady capillary-gravity waves in a two-layer fluid bounded above by a free surface and below by a horizontal rigid boundary with a small obstruction, Two critical speeds for the waves are obtained. Near the smaller critical speed, the derivation of the usual forced KdV equation (FKdV) fails when the coefficient of the nonlinear term in the FKdV vanishes. To overcome this difficulty, a new equation called a forced extended KdV equation (FEKdV) governing interfacial wave forms is obtained by a refined asymptotic method. Various solutions and numerical results of this equation are presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• Proceedings of the Korea Concrete Institute Conference
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• 1998.10a
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• pp.474-479
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• 1998

In this paper, the structural behavior of R.C. multi-layered floor structure including foam concrete layer is numerically analyzed. For the analysis, 3D interface element has been implemented to finite element analysis program to consider the interfacial behavior of multi-layered floor structure which consists of rubber layer, foam concrete layer and mortar layer on RC slab. Based on analysis results on multi-layered structure, its structural behavior is analyzed according to geometrical and material properties of foam concrete. Optimum material property of each layer of the floor structure is proposed to get optimum multi-layered concrete structure.

• Journal of Mechanical Science and Technology
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• v.17 no.11
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• pp.1638-1649
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• 2003

A study is made on the characterization of damage tolerance by spherical indentation in hardly coated layer structure with modest elastic modulus mismatch. A hard silicon nitride is prepared for the coating material and silicon nitride with 5wt% of boron nitride composites for underlayer. Hot pressing to eliminate the effect of interface delamination during the fracture makes strong interfacial bonding. The elastic modulus mismatch between the layers is not only large enough to suppress the surface crack initiation from the coating layer but sufficiently small to prevent the initiation of radial crack from the interface. The strength degradation of the layer structure after sphere contact indentation does not significantly occur, while the degradation of silicon nitride-boron nitride composite is critical at a high load and high number of contacts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.148-151
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• 1995

Excimer laser has been used to fabricate superconducting YBa$_2$Cu$_3$O$\sub$7-x/(YBCO) thin films on various substrates. An XeCl excimer laser with an wavelength of 308 nm was used to deposit both buffer layer and superconducting thin film on sapphire substrate. The characterizations of the interface between thin film and substrate were performed. The interfacial properties of thin films on buffered sapphire and on bare sapphire were compared. With a 20 nm PrBa$_2$Cu$_3$O$\sub$7-x/(PBCO) buffer layer, no diffusion layer was observed between film and substrate while the diffusion layer with about 30 nm thickness was observed between film and sapphire without buffer layer.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.565-566
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• 2006

In this work, We study electrical characterization of $HfO_2$/Hf/Si films grown by Atomic Layer Deposition(ALD). Through AES(Auger Electron Spectroscopy), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf metal layer in our structure effectively suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.