Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Electrical Characterization of $HfO_2$/Hf/Si(sub) Films Grown by Atomic Layer Deposition

ALD방법으로 성장된 $HfO_2$/Hf/Si 박막의 전기적 특성

  • 이대갑 (경북대학교 전자공학과) ;
  • 도승우 (경북대학교 전자공학과) ;
  • 이재성 (위덕대학교 정보통신공학부) ;
  • 이용현 (경북대학교 전자공학과)
  • Published : 2006.06.21
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Abstract

In this work, We study electrical characterization of $HfO_2$/Hf/Si films grown by Atomic Layer Deposition(ALD). Through AES(Auger Electron Spectroscopy), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf metal layer in our structure effectively suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

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