• Journal of Electrochemical Science and Technology
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• 제14권2호
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• pp.184-193
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• 2023

This study investigates the effects of a carbon fiber layer formed on the surface of an etched aluminum current collector on the electrochemical properties of the activated carbon electrodes for an electric double layer capacitor. A particle size analyzer, field-emission SEM, and nitrogen adsorption/desorption isotherm analyzer are employed to analyze the structure of the carbon fiber layer. The electric and electrochemical properties of the activated carbon electrodes using a carbon fiber layer are evaluated using an electrode resistance meter and a charge-discharge tester, respectively. To uniformly coat the surface with carbon fiber, we applied a planetary mill process, adjusted the particle size, and prepared the carbon paste by dispersing in a binder. Subsequently, the carbon paste was coated on the surface of the etched aluminum current collector to form the carbon under layer, after which an activated carbon slurry was coated to form the electrodes. Based on the results, the interface resistance of the EDLC cell made of the current collector with the carbon fiber layer was reduced compared to the cell using the pristine current collector. The interfacial resistance decreased from 0.0143 Ω·cm² to a maximum of 0.0077 Ω·cm². And degradation reactions of the activated carbon electrodes are suppressed in the 3.3 V floating test. We infer that it is because the improved electric network of the carbon fiber layer coated on the current collector surface enhanced the electron collection and interfacial diffusion while protecting the surface of the cathode etched aluminum; thereby suppressing the formation of Al-F compounds.

• 한국주조공학회지
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• 제17권3호
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• pp.245-251
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• 1997

Solderability, interfacial reaction and mechanical properties of joint between Sn-Bi-Ag base solder and Cu-substrate were studied. Solders were subjected to aging treatments to see the change of mechanical properties for up to 30 days at $100^{\circ}C$, and then also examined the changes of microstructure and morphology of interfacial compound. Sn-Bi-Ag base solder showed about double tensile strength comparing to Pb-Sn eutectic solder. Addition of 0.7wt%Al in the Sn-Bi-Ag alloy increase spread area on Cu substrate under R-flux and helps to reduce the growth of intermetallic compound during heat-treatment. According to the aging experiments of Cu/solder joint, interfacial intermetallic compound layer was exhibited a parabolic growth to aging time. The result of EDS, it is supposed that the soldered interfacial zone was composed of $Cu_6Sn_5$.

• Elastomers and Composites
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• 제34권1호
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• pp.31-44
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• 1999

4종류의 고무(NR, SBR, EPDM, BIMS)에 대해 완전가교 고무층과 부분가교 고무층간 계면 결합의 변화에 따른 계면 접착강도를 $30{\sim}120^{\circ}C$ 조건에서 조사하였고, 전자현미경을 이용하여 접착파단면을 조사하였다. 두 개의 완전가교 고무층간 계면에서는 물리적 결합이 계면 접착강도에 주도적인 역할을 하였고, 완전가교 고무층과 부분가교 고무층간 계면에는 물리적 결합과 화학적 결합이 공존하여 계면 접착강도에 영향을 미쳤다. 접착강도가 응집 인열강도와 유사한 수준으로 높을 때 NR은 "계면 노티인열" 형태를, EPDM은 "cross-hatched" 형태를 보였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.317-319
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• 2008

Photo-alignment layer which contains cinnamate is difficult to generate pretilt angle of liquid crystals. In order to enhance pretilt angle, blending poly (amic acid) between containing fluorine poly (amic acid) and 1,2,3,4-cyclobutanetetracaroxylic dianhydride (CBDA) / 3,5-diaminobenzyl alcohol (DBA) were used. For photoreaction, cinnamate was conjugated by interfacial reaction with blending polyimide.

• 대한전자공학회논문지
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• 제26권9호
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• pp.1369-1374
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• 1989

Electrical characteristics at the p-GaP semiconductor/CsNO3 electrolyte interfaces were investigated. It is found that such interfacial phenomena are well analyzed by semiconductor-semiconductor pn junction diode models and image charge effects of semiconductor-vacuum interfaces. The formation processes of electrical double layers and their potential variations are verified using cyclic voltammetric methods. The interfacial current are influenced by Cs+ ion coverage onto the semiconductor electrode surface and structure of electrical double layer.

• 대한기계학회논문집A
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• 제27권7호
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• pp.1132-1137
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• 2003

This study dealt with the suppression of interfacial reaction between Nb and MoSi$_2$ for the fabrication of high toughness Nb/MoSi$_2$ laminate composites, based on the results of a thermodynamical estimation. Especially, the effect of ZrO$_2$ particle on the interfacial reaction of Nb/MoSi$_2$ bonding materials has been examined. Nb/MoSi$_2$ bonding materials have been successfully fabricated by alternatively stacking matrix mixtures and Nb sheets and hot pressing in the graphite mould. The addition of ZrO$_2$ particle to MoSi$_2$ matrix is obviously effective for promoting both the interfacial reaction suppression and the sintered density of Nb/MoSi$_2$ bonding materials, since it is caused by the formation of ZrSiO$_4$ in the MoSi$_2$-ZrO$_2$ matrix mixture. The interfacial shear strength of Nb/MoSi$_2$ bonding materials also decreases with the reduction of interfacial reaction layer associated with the content of ZrO$_2$ particle and the fabrication temperature.

• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.328-332
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• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년도 춘계 학술대회 개요집
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• pp.30-32
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• 2006

The interfacial reaction and reliability of eutectic Sn-Pb and Pb-free eutectic Sn-Ag ball-grid-array (BGA) solders with an immersion Ag-plated Cu substrate were evaluated following isothermal aging at $150^{\circ}C$. During reflowing, the topmost Ag layer was dissolved completely into the molten solder, leaving the Cu layer exposed to the molten solder for both solder systems. A typical scallop-type Cu-Sn intermetallic compound (IMC) layer was formed at both of the solder/Cu interfaces during reflowing. The thickness of the Cu-Sn IMCs for both solders was found to increase linearly with the square root of isothermal aging time. The growth of the $Cu_3Sn$ layer for the Sn-37Pb solder was faster than that for the Sn-3.5Ag solder, In the case of the Sn-37Pb solder, the formation of the Pb-rich layer on the Cu-Sn IMC layer retarded the growth of the $Cu_6Sn_5$ IMC layer, and thereby increased the growth rate of the $Cu_3Sn$ IMC layer. In the ball shear test conducted on the Sn-37Pb/Ag-plated Cu joint after aging for 500h, fracturing occurred at the solder/$Cu_6Sn_5$ interface. The shear failure was significantly related to the interfacial adhesion strength between the Pb-rich and $Cu_6Sn_5$ IMC layers. On the other hand, all fracturing occurred in the bulk solder for the Sn-3.5Ag/Ag-plated Cu joint, which confirmed its desirable joint reliability.

• 대한조선학회논문집
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• 제47권3호
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• pp.359-368
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• 2010

This paper describes the generation and propagation of internal solitary wave in a two-layer fluid system by numerical analysis. Characteristics of interfacial soliton such as wave type, wave height, wave celerity are investigated numerically with respect to an extent of initial disturbance, fluid thicknesses of the two fluids and etc. The difference between the internal wave propagation on sloping beach and flat bottom was also examined. Laboratory experiments were conducted in the wave flume and compared with the results of numerical computation for verification.