• 접착 및 계면
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• 제4권3호
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• pp.14-20
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• 2003

UV 경화에 사용되는 poly(ethylene glycol 400) dimethacrylate(PEGA400DMA)와 ethylene glycol dimethacrylate(EGDMA)를 사용하여 모노머(monomer)의 종류에 따른 경화거동과 광개시제의 양과 온도에 따른 경화 거동을 photo-DSC를 사용하여 살펴보았다. Ethylene glycol의 단위길이가 늘어날수록, 광개시제의 양이 증가할수록, 반응 온도가 높을수록 경화속도가 빠르게 일어났다. 또한 PEG400DMA의 반응속도가 EGDMA보다 느리게 나타났지만 전환률은 높게 나타남을 알 수 있었다.

• 한국수소및신에너지학회논문집
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• 제32권6호
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• pp.656-662
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• 2021

For the high efficiencies of quantum dot-sensitized solar cells (QDSCs), it is important to control the severe electron recombination at the interface of photoanode/electrolyte. In this work, we optimize the surface passivation process of ZnS/SiO₂ double overlayers for the enhanced photovoltaic performances of QDSCs. The overlayers of zinc sulfide (ZnS) and SiO₂ are coated on the surface of QD-sensitized photoanode by successive ionic layer adsorption and reaction (SILAR) method, and sol-gel reaction, respectively. In particular, for the sol-gel reaction of SiO₂, the influences of temperature of precursor solution are investigated. By application of SiO₂ overlayers on the ZnS-coated photoanode, the conversion efficiency of QDSCs is increased from 5.04% to 7.35%. The impedance analysis reveals that the electron recombination at the interface of photoanode/electrolyte is obviously reduced by the SiO₂ overlayers.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 추계학술발표강연 및 논문개요집
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• pp.78-79
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• 1992

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 추계학술발표강연 및 논문개요집
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• pp.82-83
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• 1992

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.52-52
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• 1996

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.86-86
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• 2001

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.258-258
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 1992년도 제3회 학술발표회 논문개요집
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• pp.89-90
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• 1992

• Journal of Welding and Joining
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• 제21권2호
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• pp.35-41
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• 2003

Sintered alumina ceramics were joined by 2 kinds of SiO$_2$-CaO-A1$_2$O$_3$ glass solders having a similar expansivity as alumina. Wetting of glass/alumina was examined by sessile drop method. The observation of interface and bending strength related to alumina/glass/alumina systems were investigated by means of SEM/EDX and 4-point bending test. the result are summarized as follow: (1) Wetting of glass solders on alumina was good at temperatures higher than 145$0^{\circ}C$. (2) When the joining temperature wan high, diffusion and/or reactions between solder md alumina took place at the interface. These diffusions and reactions occurring at the interface greatly affected the bending strength of joining body. (3) Highest strength corresponding to 80% that of alumina was obtained by the solder of 35SiO$_2$-35CaO-30A1$_2$O$_3$(wt%) glass.