• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.41-47
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• 1999

In this paper, we report 3D-simulations of a plasma etching process by employing cell-removal algorithm takes into account the mask shadow effect os well as spillover errors. The developed simulator haas an input interface to take not only an analytic form but a Monte Carlo distribution of the ions. The graphic user interface(GUI) was also built into the simulator for UNIX environment. To demonstrate the capability of 3D-SURFILER(SURface proFILER), we have simulated for a typical contact hole structure with 36,000($30{\times}40{\times}30$) cells, which takes about 20 minutes with 10 Mbytes memory on sun ultra sparc 1. as an exemplary case, we calculated the etch profile during the reactive ion etching(RIE) of a contact hole wherein the aspect ratio is 1.57. Furthermore, we also simulated the dependence of a damage parameter and the evolution of topography as a function of the chamber pressure and the incident ion flux.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.29-33
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• 2011

Research about the geometry design of lead pin was carried based on the normal or shear stress of the interface between a lead pin and a PCB in terms of delamination failure. The taguchi method with four design factors of three levels and FEA(Finite element Analysis) are carried under $20^{\circ}$ bending and 50 ${\mu}m$ tension of lead pin. The contact width, d2, between head round and copper pad in PCB is the highest affection factor among design factors by analysis of contribution analysis. Equivalent von Mises stress of 18.7% reduction design is obtained by the parameter design of the taguchi method. Maximum normal stress occurred at contact position between solder outer surface and a Cu pad in PCB. Also, maximum shear stress happened at contact position between solder outer surface and SR layer of PCB. From these calculated results, delamination of the PGA package may be occurred from outer interface of solder to inner interface of solder.

• The KIPS Transactions:PartA
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• v.17A no.6
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• pp.281-288
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• 2010

In this paper, we describe the development of a system for generating a 3-dimensional human face using 3D scanned facial data and photo images, and morphing animation. The system comprises a facial feature input tool, a 3-dimensional texture mapping interface, and a 3-dimensional facial morphing interface. The facial feature input tool supports texture mapping and morphing animation - facial morphing areas between two facial models are defined by inputting facial feature points interactively. The texture mapping is done first by means of three photo images - a front and two side images - of a face model. The morphing interface allows for the generation of a morphing animation between corresponding areas of two facial models after texture mapping. This system allows users to interactively generate morphing animations between two facial models, without programming, using 3D scanned facial data and photo images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.1-8
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• 2004

Experimental results are presented for gate oxide degradation, such as SILC and soft breakdown, and its effect on device parameters under negative and positive bias stress conditions using n-MOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both interface and oxide bulk traps are found to dominate the reliability of gate oxide. However, for positive gate voltage, the degradation becomes dominated mainly by interface trap. It was also found the trap generation in the gate oxide film is related to the breakage of Si-H bonds through the deuterium anneal and additional hydrogen anneal experiments. Statistical parameter variations as well as the “OFF” leakage current depend on both electron- and hole-trapping. Our results therefore show that Si or O bond breakage by tunneling electron and hole can be another origin of the investigated gate oxide degradation. This plausible physical explanation is based on both Anode-Hole Injection and Hydrogen-Released model.

• Journal of the Korean Geotechnical Society
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• v.19 no.2
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• pp.247-254
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• 2003

While the interests in the environmental problem during the construction are increasing, the use of low noise-vibration auger-drilled pilling is increasing to solve noise and vibration problem in pilling. Therefore, in Korea, SIP (Soil-Cement Injected Precast Pile) method is mainly used as auger-drilled pilling. However, there is no proper design criteria compatible with the ground condition of Korea, so which is most wanted. To improve and supplement this situation, direct shear tests for the friction between SIP pile skin interface and soil were executed on various conditions. Through the analysis of test results, skin friction characteristics of SIP were investigated thoroughly Also, hyperbolic model parameter fomulas which describe the friction behavior and the new non-linear unit skin friction capacity model with SM, SC soil were suggested.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.10
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• pp.1229-1235
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• 2011

Fatigue tests were conducted on the aluminum alloy, A7075-T6 to determine the most reliable fretting fatigue damage parameter. Specimens with grooves were used, so that either fretting fatigue crack at the pad/specimen interface or plain fatigue crack at the groove could be nucleated, depending on the pad pressure. Both the crack nucleation location and initial crack orientation were examined using optical microscopy, and the results were used to assess the reliability of the various fretting fatigue damage parameters that have been most commonly used in the literature. Finite element analysis was employed to obtain the stress and strain data of the specimen, which were needed to estimate the parameter values and the orientation of the critical plane. It was revealed that both the Fatemi.Socie and McDiarmid parameters, which assume shear-mode fatigue cracking, are the most reliable.

• Journal of the Korean Electrochemical Society
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• v.4 no.4
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• pp.146-151
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• 2001

The Frumkin adsorption isotherm of the over-potentially deposited hydrogen (OPD H) for the cathodic $H_2$ evolution reaction (HER) at the poly-Ni|0.05M KOH aqueous electrolyte interface has been studied using the phase-shift method. The behavior of the phase shift $(0^{\circ}\leq{\phi}\leq90^{\circ})$ for the optimum intermediate frequency corresponds well to that of the fractional surface coverage $(1\geq{\theta}\geq0)$ at the interface. The phase-shift method, i.e., the Phase-shift profile $(-{\phi}\;vs.\;E)$ for the optimum intermediate frequency, can be used as a new method to estimate the Frumkin adsorption isotherm $(\theta\;vs.\;E)$ of the OPD H for the cathodic HER at the interface. At the poly-Ni|0.05M KOH aqueous electrolyte interface, the rate (r) of change of the standard free energy of the OPD H with $\theta$, the interaction parameter (g) for the Frumkin adsorption isotherm, the equilibrium constant (K) for the OPD H with $\theta$, and the standard free energy $({\Delta}G_{\theta})$ of the OPD H with ${\theta}$ are $24.8kJ mol^{-1},\;10,\;5.9\times10^{-6}{\leq}K{\leq}0.13,\;and\;5.1\leq{\Delta}G_{\theta}\leq29.8kJ\;mol^{-1}$. The electrode kinetic parameters $(r,\;g,\;K,\;{\Delta}G_{\theta})$ depend strongly on ${\theta} (0{\leq}{\theta}{\leq}1)$.

• Publications of The Korean Astronomical Society
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• v.12 no.1
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• pp.185-196
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• 1997

We present a code which identifies individual clouds in crowded region using IMFORT interface within Image Reduction and Analysis Facility (IRAF). We define a cloud as an object composed of all pixels in longitude, latitude, and velocity that are simply connected and that lie above some threshold temperature. The code searches the whole pixels of the data cube in efficient way to isolate individual clouds. Along with identification of clouds it is designed to estimate their mean values of longitudes, latitudes, and velocities. In addition, a function of generating individual images (or cube data) of identified clouds is added up. We also present identified individual clouds using a $^{12}CO$ survey data cube of Galactic Anticenter Region (Lee et al. 1997) as a test example. We used a threshold temperature of $5\sigma$ rms noise level of the data With a higher threshold temperature, we isolated subclouds of a huge cloud identified originally. As the most important parameter to identify clouds is the threshold value, its effect to the size and velocity dispersion is discussed rigorously.

• Journal of applied mathematics & informatics
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• v.30 no.3_4
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• pp.499-510
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• 2012

Here we consider the inertial effect in a horizontal mushy layer during solidification of a binary alloy. Using perturbation technique, we obtain two systems, one of zero order and the other of first order. We consider a mushy layer with an impermeable mush-liquid interface and of constant permeability. The analysis reveals that the effect of inertial parameter is stabilizing in the sense that the critical Rayleigh number at the onset of motion increases by the inertial effect.