• Title/Summary/Keyword: Interface Conductance

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Development of an Analysis System for Biosignal and Driving Performance Measurements (운전 생체신호 및 운전 수행도 분석 System 개발)

  • Lee, Won-Sup;Park, Jang-Woon;Kim, Su-Jin;Yoon, Sung-Hye;Yang, Xiaopeng;Lee, Yong-Tae;Son, Joon-Woo;Kim, Man-Ho;You, Hee-Cheon
    • Journal of the Ergonomics Society of Korea
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    • v.29 no.1
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    • pp.47-53
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    • 2010
  • An analysis of biosignal and performance data collected during driving has increasingly employed in research to explore a human-vehicle interface design for better safety and comfort. The present study developed a protocol and a system to effectively analyze biosignal and driving performance measurements in various driving conditions. Electrocardiogram (ECG), respiration rate (RR), and skin conductance level (SCL) were selected for biosignal analysis in the study. A data processing and analysis protocol was established based on a comprehensive review of related literature. Then, the established analysis protocol was implemented to a computerized system so that immense data of biosignal and driving performance can be analyzed with ease, efficiency, and effectiveness for an individual and/or a group of individuals of interest. The developed analysis system would be of use to examine the effects of driving conditions to cognitive workload and driving performance.

Comparison of Passivation Property on Hydrogenated Silicon Nitrides whose Antireflection Properties are Identical (반사방지 특성을 통일시킨 실리콘 질화막 간의 패시베이션 특성 비교)

  • Kim, Jae Eun;Lee, Kyung Dong;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Korean Journal of Materials Research
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    • v.26 no.1
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    • pp.47-53
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    • 2016
  • Silicon nitride ($SiN_x:H$) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride ($SiN_x:H$) films made by PECVD. The passivation properties of $SiN_x:H$ are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane ($SiH_4$) and ammonia ($NH_3$) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.

Effect of Al2O3 Surface Passivation by Thermal Oxidation of Aluminum for AlGaN/GaN Structure (Al의 열산화 방법을 이용한 AlGaN/GaN 구조의 표면 Al2O3 패시베이션 효과)

  • Kim, Jeong-Jin;Ahn, Ho-Kyun;Bae, Seong-Bum;Pak, Young-Rak;Lim, Jong-Won;Moon, Jae-Kyung;Ko, Sang-Chun;Shim, Kyu-Hwan;Yang, Jeon-Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.11
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    • pp.862-866
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    • 2012
  • Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

Analysis of wet chemical tunnel oxide layer characteristics capped with phosphorous doped amorphous silicon for high efficiency crystalline Si solar cell application

  • Kang, Ji-yoon;Jeon, Minhan;Oh, Donghyun;Shim, Gyeongbae;Park, Cheolmin;Ahn, Shihyun;Balaji, Nagarajan;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.406-406
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    • 2016
  • To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

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DENTIN PERMEABILITY CHANCE ACCORDING TO THE PROCESS OF COMPOMER RESTORATION (컴포머 충전과정에 따른 상아질 투과도의 변화)

  • Cho, Hye-Jin;Lee, Kyung-Ha;Lee, Se-Joon;Lee, Kwang-Won
    • Restorative Dentistry and Endodontics
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    • v.27 no.4
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    • pp.382-388
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    • 2002
  • Compomer is composed of matrix and filler : matrix is made of the combination of resins and polycarboxylic molecules that are light-cured, and a filler is a glass component which is capable of ion-release. The resin content of compomers produces polymerization shrinkage which can adversely affect marginal adaptation. Pretreatment is a fundamental step which is treated with conditioner or primer in the use of these materials. Microleakage of restorative materials has been investigated mostly by dye penetration method. Dye penetration method was not quantitative and not measured repeatedly. Fluid filtration method, introduced and developed by Pashley's group, has been extensively used for 20 years for research purpose to understand the physiology of dentin, as well as the effects of various restorative treatments on dentin permeability. It permits quantitative, nondestructive measurment of microleakage in a longitudinal manner. The purpose of this study was to evaluate the change of dentin permeability according to the process of compomer restoration. In this study. Cl V cavities were prepared on buccal surface of thirty extracted human molars. The prepared cavities were etched by 37% phosphoric acid. The experimental teeth were randomly divided into three groups. Each group was treated with following materials Group 1 : Prime & Bond NT/Dyract AP, Group2: Single Bond/F2000 compomer, Group 3 : Syntac Single Component/Compoglass. The bonding agent and compomer were applied for each group following manufacturers information. Dentin permeability of each group was measured at each process by fluid filtration method; Step 1 : preparation(smear layer). Step 2 : etching(smear layer removal), Step 3 : applying the bonding agent, Step 4 : filling the compomer. Dentin permeability was expressed by hydraulic conductance ($\mu\textrm{l}$ min$^{-1}$cm$H_2O$$^{-1}$). The data were analysed statistically using One-way ANOVA and Sheffe's method. The results were as follows : 1. Dentin permeability differences between each process were significant except between step 1 and step 2(p<0.01). 2. Dentin permeability after removal of smear layer was highly increased(p<0.01). 3. In most case, decrease of dentin permeability was obtained by applying bonding agent(p<0.01). 4. Dentin permeability differences among the experimental groups were not significant(p>0.05). 5. None of compomers used in this study showed perfect seal at the interface.