• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.15-22
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• 2011

Interconnect lines with inter-layer vias are experimentally characterized by using high-frequency S-parameter measurements. Test patterns are designed and fabricated using a package process. Then they are measured using Vector Network Analyzer (VNA) up to 25 GHz. Modeling a via as a circuit, its model parameters are determined. It is shown that the circuit model has excellent agreement with the measured S-parameters. The signal integrity of the lines with inter-layer vias is evaluated by using the developed circuit model. Thereby, it is shown that via may have a substantially deteriorative effect on the signal integrity of high-speed integrated circuits.

• Journal of IKEEE
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• v.26 no.3
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• pp.456-461
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• 2022

In this paper, a two-stage single-ended power amplifier (PA) with broadband gain characteristics was presented by utilizing a radio frequency (RF) transformer (TF), which is essential for a differential amplifier. The bandwidth of a PA can be improved by designing TF to have broadband characteristics and then applying it to the inter-stage matching network (IMN) of a PA. For broadband gain characteristics while maintaining the performance and area of the existing PA, an IMN was implemented on an monolithic microwave integrated circuit (MMIC) and a multi-layer printed circuit board (PCB), and the simulation results were compared. As a result of simulating the PA module designed using InGaP/GaAs HBT model, it has been confirmed that the PA employing the proposed design method has an improved fractional bandwidth of 19.8% at a center frequency of 3.3GHz, while the conventional PA showed that of 11.2%.

• Progress in Superconductivity
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• v.3 no.1
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• pp.17-22
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• 2001

Practical implementation of the SFQ technology in most application requires more than single-chip-level circuit complexity. Multiple chips have to be integrated with a technology that is reliable at cryogenic temperatures and supports an inter-chip data transmission speed of tens of GHz. In this work, we have studied two basic issues in building large RSFQ circuits. The first is the reliable inter-chip SFQ pulse transfer technique using Multi-Chip-Module (MCM) technology. By noting that the energy contained in an SFQ pulse is less than an attojoule, it is not very surprising that the direct transmission of a single SFQ pulse through MCM solder bump connectors can be difficult and an innovative technique is needed. The second is the recycling of the bias currents. Since RSFQ circuits are dc current biased the large RSFQ circuits need serial biasing to reduce the total amount of current input to the circuit.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

• Journal of information and communication convergence engineering
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• v.20 no.2
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• pp.137-142
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• 2022

Monolithic three-dimensional (M3D) logics such as M3D-NAND, M3D-NOR, M3D-buffer, M3D 2×1 multiplexer, and M3D D flip-flop, consisting of modularized M3D inverters (M3D-INVs), have been proposed. In the previous M3D logic, each M3D logic had to be designed separately for a standard cell library. The proposed M3D logic is designed by placing modularized M3D-INVs and connecting interconnects such as metal lines or monolithic inter-tier-vias between M3D-INVs. The electrical characteristics of the previous and proposed M3D logics were simulated using the technology computer-aided design and Simulation Program with Integrated Circuit Emphasis with the extracted parameters of the previously developed LETI-UTSOI MOSFET model for n- and p-type MOSFETs and the extracted external capacitances. The area, propagation delay, falling/rising times, and dynamic power consumption of the proposed M3D logic are lower than those of previous versions. Despite the larger space and lower performance of the proposed M3D logic in comparison to the previous versions, it can be easily designed with a single modularized M3D-INV and without having to design all layouts of the logic gates separately.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2012.06a
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• pp.233-233
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• 2012

다수의 서보모터를 효과적으로 제어하기 위하여 I2C(Inter-Integrated Circuit)통신을 이용하는 네트워크기반의 서보모터에 적합한 프로토콜의 시퀀스를 설계하고 이에 대한 성능을 분석 및 실험 하였다. 그 결과 다수의 서보 모터로 구성된 네트워크 통신은 데이터 손실 없이 안정적인 통신이 이루어지고 원활하게 서보모터가 제어되는 것을 확인하였다.

• ETRI Journal
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• v.27 no.6
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• pp.788-797
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• 2005

This paper describes the design and realization of an extra high frequency band $8{\times}8$ microstrip Butler matrix. Operation at 36 GHz is achieved with a frequency bandwidth exceeding 400 MHz. The circuit is implemented on a bi-layer microstrip structure using conventional manufacturing processes. This planar implementation of a Butler matrix is a key component of a switched beam smart antenna with printed antenna elements integrated on-board. Conception details, simulation results, and measurements are also given for the components (hybrid couplers, cross-couplers, and vertical inter-connections) used to implement the matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.30-33
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter-level dielectrics (ILD). Especially, defects like micro-scratch lead to severe circuit failure, and affects yield. CMP slurries can contain particles exceeding $1{\mu}m$ size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particle agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectric(IMD)-CMP. The filter installation in CMP polisher could reduce defect after IMD-CMP. As a result of micro-scratches formation, it shows that slurry filter plays an important role in determining consumable pad lifetime.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38C no.7
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• pp.623-629
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• 2013

This paper presents the implementation result of the EEG(electroencephalogram) signal transmission protocol and its test platform. EEG measured by a dry-type electrode is directly converted into digital signal by ADC(analog-to-digital converter). Thereafter it is transferred DSP(digital signal processor) platform by $I^2C$(inter-integrated circuit) protocol. DSP conducts the pre-processing of EEG and extracts feature vectors of EEG. In this work, we implement the $I^2C$ protocol with 16 channels by using 10 or 12-bit ADC. In the implementation results, the overhead ratio for the 4 bytes data burst transmission measures 2.16 and the total data rates are 345.6 kbps and 414.72 kbps with 10-bit and 12-bit 1 ksps ADC, respectively. Therefore, in order to support a high speed mode of $I^2C$ for 400 kbps, it is required to use 16:1 and $(8:1){\times}2$ ratios for slave:master in 10-bit ADC and 12-bit ADC, respectively.

• Journal of Practical Engineering Education
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• v.10 no.2
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• pp.119-124
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• 2018

Educational equipment that enables the user or device to recognize the indoor position by using the acceleration and angular velocity of the IMU (Inertial Measurement Unit) sensor is introduced. With this educational equipment, various position recognition and tracking algorithms can be learned and creative engineering design works can be realized. The data value of the IMU sensor is transmitted to the MCU (microcontroller unit) through $I^2C$ (Inter-Integrated Circuit), and the indoor position recognition algorithm is applied by processing the data value through the filter and numerical method. It is then designed to use wireless communication to send and receive processed values and to be recognized by the user. As an example using this equipament, the case of "Implementation and recognition of virtual position using computation of moving direction and distance using IMU sensor" is introduced, and various creative engineering design application is discussed.