• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.95-98
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• 2003

Power semiconductors are being currently used as a application of intelligent power inverters to a refrigerator, a washing machine and a vacuum cleaner as well as core parts of industrial system. The rating of semiconductor devices is an important factor in decision on the field of application and the forward blocking voltage is one of factors in decision of the rating. The Power MOS device has a merit of high input impedance, short switching time, and stability in temperature as well known. Power MOS devices are mainly used as switches in the field of power electronics, especially the on-state resistance and breakdown voltage are regarded as the most important parameters. Power MOS devices that enable a small size, a light weight, high-integration and relatively high voltage are required these days. In this paper, we proposed the new lateral power MOS which has forward blocking voltage of 250V and contains trench electrodes and verified manufactural possibility by using TSUPREM-4 that is process simulator.

• Journal of the Semiconductor & Display Technology
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• v.3 no.4
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• pp.33-37
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• 2004

As the high speed and high integration of semiconductor devices and the generation of heat increases resulted in the effective heat dissipation influences on the performance and lifetime of semiconductor devices. The heat resistance or heat spread function of EMC(epoxy molding compound) which protects these devices became one of very important factors in the evaluation of semiconductor chips. Recently, silica, alumina, AlN(aluminum nitride) powders are widely used as the fillers of EMC. The filler loading in encapsulants was high up to about 80 vol%. A high loading of filler was improved low water absorption, low stress, high strength, better flowability and high thermal conductivity. In this study, the thermal properties were investigated through thermal, mechanical and microstructure. Thermophysical properties were investigated by laser flash and differential scanning calorimeter(DSC). For detailed inspection of materials, the samples were examined by SEM.

• Electronics and Telecommunications Trends
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• v.34 no.2
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• pp.10-18
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• 2019

Since the introduction of CRT(Cathode Ray Tube) in the 1950s, display technologies have been developed continuously. Flat panel displays such as PDP(Plasma Display Panel) and LCD(Liquid Crystal Display) were commercialized in the late 1990s, and OLED(Organic Light Emitting Diodes) and Micro-LED(Micro-Light Emitting Diodes) are now being developed and are becoming widespread. In the future, we expect to develop ultra-realistic, flexible, embedded sensor displays. Ultra-realistic display can be applied to AR/VR(Augmented Reality/Virtual Reality) devices and spatial light modulators for holography. The sensor-embedded display can be applied to robots; electronic skin; and security devices, including iris recognition sensors, fingerprint recognition sensors, and tactile sensors. AR/VR technology must be developed to meet technical requirements such as viewing angle, resolution, and refresh rate. Holography requires optical modulation technology that can significantly improve resolution, viewing angle, and modulation method to enable wide-view and high-quality hologram stereoscopic images. For electronic skin, stable mass production technology, large-area arrays, and system integration technologies should be developed.

• International journal of advanced smart convergence
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• v.13 no.2
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• pp.7-15
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• 2024

6G network technology represents the next generation of communications, supporting high-speed connectivity, ultra-low latency, and integration with cutting-edge technologies, such as the Internet of Things (IoT), virtual reality, and autonomous vehicles. These advancements promise to drive transformative changes in digital society. However, as technology progresses, the demand for efficient data transmission and energy management between smart devices and network equipment also intensifies. A significant challenge within 6G networks is the optimization of interactions between satellites and smart devices. This study addresses this issue by introducing a new game theory-based technique aimed at minimizing system-wide energy consumption and latency. The proposed technique reduces the processing load on smart devices and optimizes the offloading decision ratio to effectively utilize the resources of Low-Earth Orbit (LEO) satellites. Simulation results demonstrate that the proposed technique achieves a 30% reduction in energy consumption and a 40% improvement in latency compared to existing methods, thereby significantly enhancing performance.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.93-105
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• 2010

Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliability and yield, increase in manufacturing cost, and etc. To sustain the historical improvements, various innovations in CMOS materials and device structures have been researched and introduced. In parallel with those researches, various new nanoelectronic devices, so called "Beyond CMOS Devices," are actively being investigated and researched to supplement or possibly replace ultimately scaled conventional CMOS devices. While those nanoelectronic devices offer ultra-high density system integration, they are still in a premature stage having many critical issues such as high variations and deteriorated reliability. The practical realization of those promising technologies requires extensive researches from device to system architecture level. In this paper, the current researches and challenges on nanoelectronics are reviewed and critical tasks are summarized from device level to circuit design/CAD domain to better prepare for the forthcoming technologies.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Journal of the Korean Institute of Intelligent Systems
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• v.17 no.3
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• pp.304-309
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• 2007

What is important in ubiquitous computing is collecting users' context information from various sensors and providing services suitable for use's current situation. Particularly in mobile environment, each area has different context awareness structure and this makes it difficult to share information with other areas. As a result, context resources for recognizing users' context ate insufficient. Moreover, because mobile devices have a limited processing capacity, there are difficulties in the real time analysis of users' context. This paper proposed a context awareness and integration model for analyzing users' context actively and providing adaptive services using mobile devices. The proposed model distinguishes users' context between dynamic and static structure to analyze the context, and obtains context resources by sharing context information of users within an area.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.361.1-361.1
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• 2016

Due to their high sensitivity, fast response, small energy consumption and ease of integration, nanoelectromechanical systems (NEMS) have attracted much interest in various applications such as high speed memory devices, energy harvesting devices, frequency tunable RF receivers, and ultra sensitive mass sensors. Since the device performance of NEMS is closely related with the mechanical and flexural properties of the material in NEMS, analysis of the mechanical and flexural properties such as intrinsic tensile stress and Young's modulus is a crucial factor for designing the NEMS structures. In the present work, the intrinsic mechanical properties of highly stressed silicon nitride (SiN) beams are investigated as a function of the beam length using two different techniques: (i) dynamic flexural measurement using optical interferometry and (ii) quasi-static flexural measurement using atomic force microscopy. The reliability of the results is analysed by comparing the results from the two different measurement techniques. In addition, the mass density, Young's modulus and internal stress of the SiN beams are estimated by combining the techniques, and the prospect of SiN based NEMS for application in high sensitive mass sensors is discussed.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 1994.11a
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• pp.21-26
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• 1994

Conventional electroexplosive devices (EED) commonly use a very small metal bridgewire to ignite explosive materials i.e. pyrotechnics, primary and secondary explosives. The use of semiconductor devices to replace “hot-wire” resistance heating elements in automotive safety systems pyrotechnic devices has been under development for several years. In a typical 1 amp/1 watt electroexplosive devices, ignition takes place a few milliseconds after a current pulse of at least 25 mJ is applied to the bridgewire. In contrast, as for a SCB devices, ignition takes place in a few tens of microseconds and only require approximately one-tenth the input energy of a conventional electroexplosive devices. Typically, when SCB device is driven by a short (20 $\mu\textrm{s}$), low energy pulse (less than 5 mJ), the SCB produces a hot plasma that ignites explosive materials. The advantages and disadvantages of this technology are strongly dependent upon the particular technology selected. To date, three distinct technologies have evolved, each of which utilizes a hot, silicon plasma as the pyrotechnic initiation element. These technologies are 1.) Heavily doped silicon as the resistive heating initiation mechanism, 2.) Tungsten enhanced silicon which utilizes a chemically vapor deposited layer of tungsten as the initiation element, and 3.) a junction diode, fabricated with standard CMOS processes, which creates the initial thermal environment by avalanche breakdown of the diode. This paper describes the three technologies, discusses the advantages and disadvantages of each as they apply to electroexplosive devises, and recommends a methodology for selection of the best device for a particular system environment. The important parameters in this analysis are: All-Fire energy, All-Fire voltage, response time, ease of integration with other semiconductor devices, cost (overall system cost), and reliability. The potential for significant cost savings by integrating several safety functions into the initiator makes this technology worthy of attention by the safety system designer.

• ETRI Journal
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• v.28 no.1
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• pp.103-106
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• 2006

We have fabricated a planar lightwave circuit (PLC) hybrid-integrated optical sub-assembly of a triplexer using a thin film filter (TFF)-attached wavelength division multiplexer (WDM) and photodiode (PD) carriers. Two types of TFFs were attached to a diced side of a silica-terraced PLC platform, and the PD carriers with a $45^{\circ}$ mirror on which pin-PDs were bonded were assembled with the platform. A clear transmitter eye-pattern and minimum receiver sensitivity of -24.5 dBm were obtained under 1.25 Gb/s operation for digital applications, and a second-order inter-modulation distortion (IMD2) of -70 dBc was achieved for an analog receiver.