• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.243-247
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• 2005

This paper describes an on-going national R&D program for the development of a gas turbine/fuel cell hybrid power generation system and related R&D activities. The final goal of this program is to develop a 200kW-c1ass gas turbine/fuel cell hybrid power generation system and achieve high efficiency over $60\%$ (AC/LHV). In the first phase of the development, a sub-scaled 60kW-class hybrid system based on the 50kW-class microturbine and the 5kW SOFC will be developed for the purpose of concept proof of the hybrid system. Core components such as the microturbine and the SOFC system are being developed and parallel preparation for system integration is being carried out. Before the core components are assembled in the final system. operating characteristics of a hybrid system are investigated from a simulated system where a turbocharger (microturbine simulator) and a modified fuel cell burner test facility (fuel cell simulator) are employed. The 60kW demonstration unit will be built up and operated to provide the valuable information for the preparation of the final full scale 200kW hybrid system.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.4
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• pp.386-394
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• 2012

Recent trends in the flexible manufacturing systems are morphing cell control for the shop-wide production operation system and providing the integrated operation and execution system together with vendor-specific FMC/FMS platform. In these requirements, the shop-floor level operation system plays a role of coordinating the control activity of each cell, and has to provide flexibility for the complexity of mixed operations of various cells. This paper suggests a system architecture for the mixed environments of multi-cells and job shop, its corresponding enabling technologies based on comparative studies with other related studies and commercialized systems. This approach includes a process definition model considering the integration with upper BOM-BOP and external service modules, and reconfigurable device-level interface which provides dynamic interconnections with machine tools and cell controllers. The function modules and their implementation results are also described to provide the feasibility of the proposed approaches as the flexible shop-floor operation system for the multi-cell environments.

• Journal of Biomedical Engineering Research
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• v.34 no.4
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• pp.218-225
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• 2013

In this paper hair bundle feature model and integration method for hair cell models were proposed. The proposed hair bundle feature model was based on spring-damper-mass model. Input of integrated vestibular hair cell model was frequency and output was interspike interval of hair cell that was reflected the feature of hair bundles. Irregular afferents that had a great gain variation showed reduction of negative stiffness section. Regular afferents that had a small gain variation, however, showed same feature with base negative stiffness feature. As a result, integrated vestibular hair cell model showed almost the same modeling data with experimental data in the modeled eleven frequency bands. It is verified that the proposed model is a good model for hair bundle feature modeling.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.5
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• pp.405-412
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• 2012

A flow control on airfoil installed a vortex cell for high efficiency wind turbine blade in stationary and dynamic stall conditions have been numerically investigated by solving the compressible Navier-Stokes equations. The numerical scheme is based on a node-based finite-volume method with Roe's flux-difference splitting and an implicit time-integration method coupled with dual time step sub-iteration. The computed result for the airfoil in the stationary showed that lift-drag ratio increases due to low pressure by the vortex cell. The oscillating airfoil with the vortex cell showed that the magnitude of hysteresis loop is reduced due to the enhanced vortex in the cell.

• Journal of IKEEE
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• v.21 no.3
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• pp.272-275
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• 2017

Recently, semiconductor integration density enormously increases and its interconnection width is significantly narrowed, which leads to EMI (electromagnetic interference) problems on chip level. Chip manufacturer exploits TEM cell (transverse electromagnetic cell) to measure EMI on chip level, which requires PCB (printed circuit board) for measurement purpose. However, it is often neglected to consider that PCB patterns and other factors can affect on EMI measurement. In this paper, several test patterns are designed for different PCB design variables, and effects of PCB patterns on EMI measurement in TEM cell are analyzed. Based on these analyses, PCB design guidelines are also proposed to minimize the effects on EMI measurements.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.314-321
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• 2006

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Journal of Magnetics
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• v.7 no.3
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• pp.101-105
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• 2002

MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• v.y2005m4
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• pp.343-346
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• 2005

Three dimensional structures of detonation wave propagating through a square-shaped duct were investigated using computational method and parallel processing. Inviscid fluid dynamics equations coupled with $variable-{\gamma}$ formulation and simplified one-step Arrhenius chemical reaction model were analysed by MUSCL-type TVD scheme and four stage Runge-Kutta time integration. The unsteady computational results in three dimension show the detailed mechanism of transverse mode and diagonal mode of detonation wave instabilities resulting same cell length but different cell width in smoked-foil record.

• 한국전산유체공학회:학술대회논문집
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• 2005.10a
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• pp.151-155
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• 2005

Three-dimensional structures of unsteady detonation wave propagating through a square-shaped tube is studied using computational method and parallel processing. Inviscid fluid dynamics equations coupled with variable-${\gamma}$ formulation and simplified one-step Arrhenius chemical reaction model were analysed by a MUSCL-type TVD scheme and four stage Runge-Kutta time integration. Results in three dimension show the two unsteady detonation wave propagating mode, the Rectangular and diagonal mode of detonation wave instabilities. Two different modes of instability showed the same cell length but different cell width and the geometric similarities in smoked-foil record.