• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.593-600
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• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• 한국자동차공학회논문집
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• 제16권1호
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• pp.71-77
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• 2008

This paper proposes an Electronic Throttle Body (ETB) model considering a non-linearity of DC motor driver which is integrated with a H-bridge and a gate driver. A propagation delay and reverse recovery time of switching components cause non-linear characteristic of DC motor driver. This non-linearity affects not only the amateur voltage of DC motor, but also entire behaviour and parameters of ETB. In order to analyze the behavior of ETB more accurately, this non-linear effect of DC motor driver is modeled. The developed ETB model is validated by use of the step response and ramp response experiments, and it shows relatively accurate results compared with linear DC motor driver model.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1236-1239
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• 2009

Each LCD TFT panel requires a power supply IC on the panel board. The IC provides the power rails for the timing controller, source and gated driver IC and others. The industry trend moves towards higher integrated devices. The challenge for the panel manufacturer is the development and implementation of such an IC in cooperation with the semiconductor supplier. If not done carefully the solution will not reduce the overall solution cost or can't provide the expected performance and reliability. This paper discusses the key considerations to successfully develop and integrate a highly integrated LCD bias IC into the system.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.970-973
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• 2003

Abstract An idea to redce the direct-path short circuit current of the CMOS digital integrated circuit is present. The sample circuit model of the CMOS digital circuit is the CMOS current-control digital output driver circuit, which are also suitable for the low voltage supply integrated circuits as the simple digital inverter, are present in this title. The circuit consists of active MOS load as the current control source, which construct from the saturated n-channel and p-channel MOSFET and the general CMOS inverter circuits. The saturated MOSFET bias can control the output current and the frequency response of the circuit. The experimental results show that lower short circuit current control can make the lower frequency response of the circuit.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.66-73
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• 1999

In this paper, the design of one-chip FED system integrated with driving circuits in reported on the basis of MOSFET controlled FEA (MCFEA). To integrate a MOSFET with a FEA efficiently, a new fabrication process is proposed. It is confirmed that the MOSFET with threshold voltage of about 2volts controls the FEA emission current up to 20 ${\mu}$A by applying driving voltage of 15 volts, which is enough current level to utilize the MCFEA as a pixel for FED. The drain breakdown voltage of the MOSFET is measured to be 70 volts, which is also high enough for 60 volt operation of FED. The circuits for row and column driver are designed stressing on saving area, reducing malfunction probability and consuming low power to maximize the merit of on-chip driving circuits. Dynamic logic concept and bootstrap capacitors are used to meet these requirements. By integrating the driving circuit with FEA, the number of external I/O lines can be less than 20, irrespectively of the number of pixels.

• ETRI Journal
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• 제28권5호
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• pp.648-651
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• 2006

In this letter we present a right-angle-bent coplanar waveguide (CPW) which we developed for the application of the driver amplifier-integrated (DAI) 40 Gbps traveling wave electroabsorption modulated laser module. The developed CPW realized parallel progression of the radio frequency (RF) and light using a dielectric overlay structure and wedge bonding on the bending section. The measured $S_{11}$ and $S_{21}$ of the developed CPW were kept below-10 dB up to 35 GHz and -3 dB up to 43 GHz, respectively. These measured results of the CPW were in good agreement with the simulation results and demonstrated the applicability of the CPW to the 40 Gbps communication module.

• Journal of Power Electronics
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• 제17권3호
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• pp.621-631
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• 2017

A KY converter integrated with a conventional synchronously rectified (SR) boost converter and a coupled inductor is presented in this paper. This improved KY converter has the following advantages: 1) the two converters use common switches; 2) the voltage gain of the KY converter can be improved due to the integration of a boost converter and a coupled inductor; 3) the leakage inductance of the coupled inductor is utilized to achieve zero voltage switching (ZVS); 4) the current stress on the charge pump capacitors and the decreasing rate of the diode current can be limited due to the use of the coupled inductor; and 5) the output current is non-pulsating. Moreover, the active switches are driven by using one half-bridge gate driver. Thus, no isolated driver is needed. Finally, the operating principle and analysis of the proposed converter are given to verify the effectiveness of the proposed converter.

• 한국통신학회:학술대회논문집
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• 한국통신학회 2004년도 하계종합학술발표회논문초록집
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• pp.340-340
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• 2004

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1029-1032
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• 2005

A 262K-color QVGA LTPS AMLCD was developed. This panel has integrated gate driver and data multiplexer (1:3) by p_Si LTPS TFT process. The commercialized driver IC was adopted to implement this display. Fine image quality, low powerconsumption and cost-efficiency feature make the panel be suitable for mobile application.

• 한국산업정보학회논문지
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• 제19권3호
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• pp.25-30
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• 2014

본 논문에서는 태양광시스템의 분산형 최대 전력점 추적(DMPPT)을 제어하는 게이트 드라이버 회로를 설계하였다. 그림자가 생긴 모듈에서도 최대 전력점을 추적할 수 있는 분산형 방식(DMPPT) 방식을 구현 하였으며, 각각의 모듈 내부에 DC-DC 변환기를 구동하기 위한 고전압 게이트 구동회로를 설계하였다. 태양광 시스템의 내부는 12비트 ADC, PLL, 게이트 드라이버가 내장 되어 있다. 게이트 드라이버의 하이 사이드 레벨 쉬프터에 숏-펄스 발생기를 추가하여 전력소모와 소자가 받는 스트레스를 줄였다. BCDMOS 0.35um 공정을 사용하여 구현하였으며 최대 2A 전류를 감달 할 수 있고, 태양 광 전압 최대 50V까지 받을 수 있도록 설계하였다.