• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.48-53
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• 2008

In this paper, we developed the MMIC low noise amplifier using 100 nm metamorphic HEMTs technology in combination with coplanar circuit topology for 94 GHz applications. The $100nm\times60{\mu}m$ MHEMT devices for the MMIC LNA exhibited DC characteristics with a drain current density of 655 mA/mm, an extrinsic transconductance of 720 mS/mm. The current gain cutoff frequency $(f_T)$ and maximum oscillation frequency $(f_{max})$ were 195 GHz and 305 GHz, respectively. The realized MMIC LNA represented $S_{21}$ gain of 14.8 dB and noise figure of 4.6 dB at 94 GHz with an over-all chip size of $1.8mm\times1.48mm$.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.1
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• pp.143-149
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• 2018

This paper presents an implementation of a streaming system which can forward live video stream to multiple users from a Phantom4, which is a drone made by DJI. We constructed the streaming server on Raspberry Pi 3 board for high mobility. Also We implemented the system so that the video stream can be played on any devices if the HTML5 standard web browser is utilized. We compiled C codes of FFmpeg open sources and installed in the Raspberry Pi3 as the streaming server and developed a Java application to execute as the integrated server that controls the other softwares on the streaming server. Also we developed an Android application which receives the live video stream from the drone and sends the streaming server continuously. The implemented system in this paper can successfully stream the live video on 24 frames per second at the resolution of 148x112 in considering the low hardware throughput of the streaming server.

• Journal of Information Display
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• v.10 no.1
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.34-38
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• 2000

This paper describes design, fabrication, and performance of an ultra-high-speed and low-noise MMIC (Monolithic Microwave Integrated Circuit) preamplifier for a 10 Gb/s optical receiver. The transimpedance type 3-stage MMIC preamplifier for ultra-high-speed and low-noise was designed using an AlGaAs/InGaAs/GaAs P-HEMTs(Pseudomorphic High Electron Mobility Transistors) with 0.15${\mu}{\textrm}{m}$ length T-shaped gate. To obtain broadband characteristics, we used the inductor peaking technique, and the gate width was optimized for low noise performance. Measurements reveal that the fabricated preamplifier has the high transimpedance gain of 60 ㏈Ω and 9.15 ㎓ bandwidth with the noise figure of less than 3.9 ㏈.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.27-32
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• 1999

Metal-ferroelectric-semiconductor devices by susing rapid thermal annealed $LiNbO_3/Si$(100) structures were fabricated and demonstrated nonvolatile memory operations. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were about $600cm^2/V{\cdot}s$ and 0.16mS/mm, respectively. The ID-VG characteristics of MFSFET's showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3 films. The drain current of the on state was more than 4 orders of magnitude larger than the off state current at the same read gate voltage of 0.5V, which means the memory operation of the MFSFET. A write voltage as low as ${\pm}3V$, which is applicable to low power integrated circuits, was used for polarization reversal. The ferroelectric capacitors showed no polarization degradation up to $10^{10}$ switching cycles with the application of symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) of 500kHz.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.3
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• pp.15-20
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• 2015

After the US government declared 3D printing technology a next-generation manufacturing technology, there have been many practical studies conducted to expand 3D printing technology to manufacturing technologies, called AMERICA MAKES. In particular, the Keck Center, located at the University of Texas at El Paso, has studied techniques for easily combing the 3D stacking process with space mobility and expanded these techniques to simultaneous staking techniques for multiple materials. Additionally, it developed convergence manufacturing techniques, such as direct inking techniques, in order to produce a module structure that combines electronic circuits and components, such as CUBESET. However, in these studies, it is impossible to develop a unified system using traditional independent through simple sequencing connections. This is because there are many problems in the integration between the stacking modeling of 3D printers and post-machining, such as thermal deformations, the precision accuracy of 3D printers, and independently driven coordinate problems among process systems. Therefore, in this paper, the integration method is suggested, which combines these 3D printers and subsequent machining process systems through an Internet-based cloud. Additionally, the sequential integrated system of a 3D printer, an NC milling machine, machine vision, and direct inking are realized.

• The Journal of the Convergence on Culture Technology
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• v.6 no.3
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• pp.167-174
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• 2020

The aim of this study is to find out how the mathematics activities linked to outdoor movement activities affect children's motor abilities. S kindergarten located in Gyeonggido do conducted a fifteen week program for young children aged five years. In this study, young children's motor perfromenace test scale of Ji Sungae(2007) was conducted. Each area consists of a five-point scale. There were a total of thirty-three questions. pre-tests and post-tests were performed for young children's motor performance. t-test was used. As a result of this study, it was found that mathematics activities in connection with outdoor movement activities had a positive effect on the improvement of overall exercise ability, non-movement exercise ability, and mobility exercise ability of young children. Based on the results of this study, it is expected that various programs for young children integrated with outdoor motor activities will be developed and applied to the site.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.89-95
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• 2003

In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.1-8
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• 2009

In this paper, a temperature variation-insensitive power-up detector for use in analog and digital integrated systems has been proposed. To provide temperature-insensitive characteristic, nMOS and pMOS voltage dividers in the proposed power-up detector are made to have zero temperature coefficient by exploiting the fact that the effective gate-source voltage of a MOS transistor can result in mutual compensation of mobility and threshold voltage for temperature independency. Comparison results using a 68-nm CMOS process indicate that the proposed power-up detector achieves as small as 4 mV voltage variation at 1.0 V power-up voltage over a temperature range of $-30^{\circ}C$ to $90^{\circ}C$, resulting in 92.6% reduction on power-up voltage variations over conventional power-up detectors.

• Korean Membrane Journal
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• v.7 no.1
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• pp.28-33
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• 2005

The feasibility of producing sulfuric acid and ammonia water from ammonium sulfate was investigated by an integrated process including ammonia stripping (AS) and electrodialysis with bipolar membrane (EDBM). It was suggested that the production of sulfuric acid using ammonia stripping-electrodialysis with bipolar membrane (ASEDBM) was effective in obtaining high concentration of sulfuric acid compared with EDBM alone. AS was carried out over pH 11 and within the range of temperatures, $20^{\circ}C{\~}60^{\circ}C$. Sodium sulfate obtained using AS was used as the feed solution of EDBM. The recovery of ammonia increased from $40\%$ to $80\%$ at $60^{\circ}C$ due to the increased mobility of ammonium ion. A pilot-scale EDBM system, which is composed of two compartments and 10 cell pairs with an effective membrane area of $200 cm^2$ per cell, was used for the recovery of sulfuric acid. The performance was examined in the range of 0.1 M${\~}$1.0 M concentration of concentrate compartment and of $25 mA/cm^2{\~}62.5 mA/cm^2$ of current density. The maximum current efficiency of $64.9\%$ was obtained at 0.1 M sulfuric acid because the diffusion rate at the anion exchange membrane decreased as the sulfuric acid of the concentrate compartment decreased. It was possible to obtain the 2.5 M of sulfuric acid in the $62.5 mA/cm^2$ with a power consumption of 13.0 kWh/ton, while the concentration of sulfuric acid was proportional to the current density below the limiting current density (LCD). Thus, the integrating process of AS-EDBM enables to recover sulfuric acid from the wastewaters containing ammonium sulfate.