Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 36D Issue 11
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- Pages.27-32
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- 1999
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- 1226-5845(pISSN)
Properties of Low Operating Voltage MFS Devices Using Ferroelectric $LiNbO_3$ Film
$LiNbO_3$ 강유전체 박막을 이용한 저전압용 MFS 디바이스의 특징
- Kim, Kwang-Ho (School of Electronic Computer & Communication Semiconductor Engineering, Cheongju University) ;
- Jung, Soon-Won (Dept. of Electronics University) ;
- Kim, Chae-Gyu (Dept. of Electronics University)
- Published : 1999.11.01
Abstract
Metal-ferroelectric-semiconductor devices by susing rapid thermal annealed
고온 열처리 시킨
Keywords