• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.249-251
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• 1994

We fabricated the sample of M-I-M with the insulating layer SiO. Refractive index of wave length, photon energy, absorption rate of SiO evaporation thin film are experimentally examined by spectroscopic Ellipsometer. The calculated equations of refractive index, absorption rate and permittivity of SiO thin film are induced. Calculated values and experimental values are compared and then mutual validity is proved.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.176-178
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• 2002

Surface states of silicone polymer treated by plasma were investigated by the analysis by x-ray photoelectron spectroscopy(XPS) and surface voltage decay after corona charging. Plasma treatment causes the silica -like oxidative layer, which was confirmed with XPS, and lowers surface resistivity with increasing the plasma treatment time. Using the decay time constant of surface voltage, the calculated surface resistivity was compared with the value directly measured by voltage-current method using three electrodes system. A good agreement between two methods was obtained. In addition, we estimated the thermal activation energy for surface conduction, Based on our results, we could understand the relationship between surface chemical states and surface electrical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.64-68
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• 2002

According to the increasing power demand for the future construction of many underground cables will be required. However, construction of new ducts for power cables will be more difficult. Therefore, research work for realizing the high temperature superconducting(HTS) cable has advanced, where the development of electrical insulating system at cryogenic temperature is one of the major researches. For an electrical insulation design of HTS cable, it is important to understand not only breakdown but also partial discharge and dielectric loss($tan{\delta}$) in liquid nitrogen/paper composite insulation system. In this paper, we investigated breakdown characteristics in liquid nitrogen/paper composite insulation system for the application to HTS cable. And, we studied the breakdown characteristics of the multi-layer and butt gap of the insulation papers in liquid nitrogen. Also, we measured dielectric loss($tan{\delta}$) of the mini-model Cable made of TERLAM IPP.

• Polymer(Korea)
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• v.36 no.1
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• pp.22-28
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• 2012

Functionalized graphene/epoxy composites were prepared to miprove thermal conductivities of epoxy composites and to maintain electrical insulating property. Graphene oxide (GO) was prepared using Hummers method, and then GO was reacted with aluminum isopropoxide to functionalize $Al(OH)_3$ layer onto GO surface by a simple sol-gel method (Al-GO). GO and Al-GO were characterized by X-ray photoelectron spectroscopy, field emission scanning electron microscopy and transmission electron microscopy. The analyses confirm that GO was coated with a large and dense coverage of $Al(OH)_3$. GO and Al-GO (1 and 3 wt%) were embedded in bisphenol A (DGEBA) to investigate the effects of electrical insulating property. Electrical resistivity showed that Al-GO had better insulating property than GO. Further, the thermal conductivity of GO and Al-GO/epoxy composites was higher than that of neat epoxy resins. In particular, the thermal conductivity of Al-GO/bisphenol F (DGEBF) improved by 23.3% and Al-GO/DGEBA enhanced by 21.8% compared with pure epoxy resins.

• Journal of the Korean Chemical Society
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• v.37 no.2
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• pp.183-190
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• 1993

The properties of oxidation reactions of carbon monoxide on ZnO (1010) were studied at the temperature range of 298∼573 K by measuring the capacitance and conductance in the insulating layer of two contacting crystal faces which vary with ZnO-gas interaction mechanisms. Exposure of the sample to CO resulted in an increase in the layer depth at 298∼373 K, while it decreased above 473 K. But the variation of the layer depth was very small in all measurements. When CO was admitted to the sample previously treated with $O_2$ at the same temperature, we observed the different features compared with the case of CO adsorption. From these results we discussed the mechanisms of CO oxidation in connection with the adsorbed oxygen species at each temperature.

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1298-1302
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• 2011

This study describes the development of an electrochemical array immunochip for the detection of IgG. Interdigitated immunochip platforms were fabricated by sputtering gold on a glass wafer by using MEMS process and then were coated with Eudragit S100, an enteric polymer, forming an insulating layer over the working area of immunochips. The breakdown of the polymer layer was exemplified by the catalytic action of urease which, in the presence of urea, caused an alkaline pH change. This subsequently caused an increase of the double layer capacitance of the underlying electrode. Used in conjunction with a competitive immunoassay format, this allowed the ratio of initial to final electrode capacitance to be directly linked with the concentration of analyte, i.e. IgG. Responses to IgG could be detected at IgG concentration as low as $250\;ngmL^{-1}$ and showed good linearity up to IgG concentration as high as $20\;{\mu}gmL^{-1}$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.8
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• pp.5213-5218
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• 2014

Organic memory devices were made using the plasma polymerization method. The memory device consisted of ppMMA(plasma polymerization MMA) thin films as the tunneling and insulating layer, and a Au thin film as the memory layer, which was deposited by thermal evaporation. The organic memory operation theory was developed according to the charging and discharging characteristics of floating gate type memory, which would be measured by the hysteresis voltage and memory voltage with the gate voltage values. The I-V characteristics of the fabricated memory device showed a hysteresis voltage of 26 [V] at 60 ~ -60 [V] double sweep measuring conditions. The programming voltage was applied to the gate electrode in accordance with the result of this theory. A programming voltage of 60[V] equated to a memory voltage of 13[V], and 80[V] equated to a memory voltage of 18[V]. The memory voltage of approximately 40 [%]increased with increasing programming voltage. The charge memory layer charging or discharging according to the theory of the memory was verified experimentally.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.23-29
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• 2020

Electrochromic (EC) device is an element whose transmittance is changed by electrical energy. Coloring and decoloring states can be easily controlled and thus used in buildings and automobiles for energy saving. There exist several types of EC devices; EC using electrolytes, polymer dispersed liquid crystal (PDLC), and suspended particle device (SPD) using polarized molecules. However, these devices involve solutions such as electrolytes and liquid crystals, limiting their applications in high temperature environments. In this study, we have studied all-solid-state EC device based on Tin(IV) oxide (SnO₂). A coloring phase is achieved when electrons are accumulated in the ultraviolet (UV)-treated SnO₂ layer, whereas a decoloring mode is obtained when electrons are empty there. The UV treatment of SnO₂ layer brings in a number of localized states in the bandgap, which traps electrons near the conduction band. The SnO₂-based EC device shows a transmittance of 70.7% in the decoloring mode and 41% in the coloring mode at a voltage of 2.5 V. We have achieved a transmittance change as large as 29.7% at the wavelength of 550 nm. It also exhibits fast and stable driving characteristics, which have been demonstrated by the cyclic experiments of coloration and decoloration. It has also showed the memory effects induced by the insulating layer of titanium dioxide (TiO₂) and silicone (Si).

• Korean Journal of Materials Research
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• v.27 no.6
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• pp.295-300
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• 2017

Aluminum-oxide($Al_2O_3$) thin films were deposited by electron cyclotron resonance plasma-enhanced atomic layer deposition at room temperature using trimethylaluminum(TMA) as the Al source and $O_2$ plasma as the oxidant. In order to compare our results with those obtained using the conventional thermal ALD method, $Al_2O_3$ films were also deposited with TMA and $H_2O$ as reactants at $280^{\circ}C$. The chemical composition and microstructure of the as-deposited $Al_2O_3$ films were characterized by X-ray diffraction(XRD), X-ray photo-electric spectroscopy(XPS), atomic force microscopy(AFM) and transmission electron microscopy(TEM). Optical properties of the $Al_2O_3$ films were characterized using UV-vis and ellipsometry measurements. Electrical properties were characterized by capacitance-frequency and current-voltage measurements. Using the ECR method, a growth rate of 0.18 nm/cycle was achieved, which is much higher than the growth rate of 0.14 nm/cycle obtained using thermal ALD. Excellent dielectric and insulating properties were demonstrated for both $Al_2O_3$ films.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.