• Title/Summary/Keyword: Inorganic film

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A Study on the Separation of Cesium Cations by Using Electrochemical Ion Exchanger of KNiFe(CN)6 (KNiFe(CN)6 전기화학적 이온교환체를 이용한 세슘 양이온의 분리에 관한 연구)

  • Hwang, Young Gi
    • Journal of the Korean Electrochemical Society
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    • v.15 no.4
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    • pp.256-263
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    • 2012
  • This study was performed to investigate the separation of cesium cations by using an electrochemical ion exchanger of nickel hexacyanoferrate($KNiFe(CN)_6$) film electrode. Potential, current, and charge passing through the cyclic voltammograms were measured in singular and binary solutions of 1.0M $NaNO_3$ and 1.0M $CsNO_3$. Before and after each experiment, the structural morphology and atomic composition of $KNiFe(CN)_6$ were analyzed by SEM and EDS, respectively. The ion selectivity of $KNiFe(CN)_6$ was also observed by the voltammograms and atomic compositions measured in the solution alternated between sodium and cesium. As the result of this study, it was found that the electrically switched $KNiFe(CN)_6$ ion exchanger had the significant advantage of 40 times or longer durability than conventional organic or inorganic ion exchanger. It was also shown that the $KNiFe(CN)_6$ ion exchanger had high selectivity for cesium over sodium.

Phase Distribution and Interface Chemistry by Solid State SiC/Ni Reaction

  • Lim, Chang-Sung;Shim, Kwang-Bo;Shin, Dong-Woo;Auh, Keun-Ho
    • The Korean Journal of Ceramics
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    • v.2 no.1
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    • pp.19-24
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    • 1996
  • The phase distribution and interface chemistry by the solid-state reaction between SiC and nickel were studied at temperatures between $550 \;and\; 1250^{\circ}C$ for 0.5-100 h. The reaction with the formation of silicides and carbon was first observed above $650^{\circ}C$. At $750^{\circ}C$, as the reaction proceeded, the initially, formed $Ni_3Si_2$ layer was converted to $Ni_2$Si. The thin nickel film reacted completely with SiC after annealing at $950^{\circ}C$ for 2 h. The thermodynamically stable $Ni_2$Si is the only obsrved silicide in the reaction zone up to $1050^{\circ}C$. The formation of $Ni_2$Si layers with carbon precipitates alternated periodically with the carbon free layers. At temperatures between $950^{\circ}C$ and $1050^{\circ}C$, the typical layer sequences in the reaction zone is determined by quantitative microanalysis to be $SiC/Ni_2$$Si+C/Ni_2$$Si/Ni_2$$Si+C/…Ni_2$Si/Ni(Si)/Ni. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was discussed in terms of reaction kinetics and thermodynamic considerations. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic growth of the reaction zone.

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Fabrication and Inertia Dynamic Friction Properties of Pitch-based Carbon-Carbon Composites

  • Lee, Jinyong;Suhr, Dong-Soo;Lim, Yun-Soo;Lee, Seung-Goo;Park, Jong-Kyoo
    • The Korean Journal of Ceramics
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    • v.4 no.3
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    • pp.193-198
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    • 1998
  • This paper presents the effects of an initial braking velocity, a braking pressure, and the number of braking stop on the tribological behaviors for the three different C-C composites using an inertia dynamic-friction tester. The C-C composites were prepared through the processes of several cycles of pitch impregnation/carbonization with different friction surface texture such as continuous 8-harness satin fabric (ADD-1), chopped fiber (ADD-2) and chopped fiber (ADD-3) having higher fiber volume fraction on friction than ADD-2 by about 10%. ADD-1 exhibited a higher fraction coefficient (0.41~0.33) than those of ADD-2 and ADD-3 (0.32~0.26) under the various initial braking velocities and braking pressures. The fraction coefficients decreased with increasing the initial velocity and the braking pressures. Wear rate by the thickness change after every 25 stop indicated that ADD-2 and ADD-3 having 1.7~2.7 $\mu\textrm{m}$/stop/pair were much lower than that of ADD-1 showing 5.0~6.5 $\mu\textrm{m}$/stop/pair. All specimens showed a little bit lower wear rate during the middle stage than the initial and latter stages among 100 braking stops. ADD-1 showed higher friction coefficient and wear rate due to the active pull-out of the fibers, evidenced by thicker were film and wear debrises.

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Changes of Chemical Properties and Correlation under No-tillage Silt Loam Soil with Ridge Cultivation of Plastics Film Greenhouse Condition

  • Yang, Seung-Koo;Shin, Gil-Ho;Kim, Hee-Kon;Kim, Hyun-Woo;Choi, Kyung-Ju;Jung, Woo-Jin
    • Korean Journal of Soil Science and Fertilizer
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    • v.48 no.3
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    • pp.170-179
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    • 2015
  • This study was carried out to investigate the sustainable agriculture of no-tillage technique to minimize tillage problems under rain interception green house condition including recycling of the ridge and the furrow for following cultivation in Korea. Chemical properties in soils were investigated at 3-years after cultivation at conventional tillage [CT; 2-years no-tillage (2009-2010) and 1-year (2011) tillage] and no-tillage [NT; 2009-2011] field. Soil pH maintained between 5.8 and 6.0 irrespectively tillage and no-tillage. Salinity (EC), contents of total nitrogen (TN), cation exchange capacity (CEC), and exchangeable cations (K, Ca and Mg) in soil were remarkably higher in CT than in NT treatment. Salinity (EC), contents of OM, TN, CEC, and exchangeable cations in top soil and subsoil indicated higher deviation in CT than NT treatment. Organic matters and inorganic matters in soil were positive (+) correlation. Suppression of pepper growth and increase of yield were observed in no-tillage soil compared with tillage soil. These results indicated that no-tillage technique in crop culture could play an important role with respect to chemical properties in silt loam soil.

Photo-induced Electrical Properties of Metal-oxide Nanocrystal Memory Devices

  • Lee, Dong-Uk;Cho, Seong-Gook;Kim, Eun-Kyu;Kim, Young-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.254-254
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    • 2011
  • The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

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Technical Tasks and Development Current Status of Organic Solar Cells (유기 태양전지의 개발 현황과 기술 과제)

  • Jang, Ji Geun;Park, Byung Min;Lim, Sungkyoo;Chang, Ho Jung
    • Korean Journal of Materials Research
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    • v.24 no.8
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    • pp.434-442
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    • 2014
  • Serious environmental problems have been caused by the greenhouse effect due to carbon dioxide($CO_2$) or nitrogen oxides($NO_x$) generated by the use of fossil fuels, including oil and liquefied natural gas. Many countries, including our own, the United States, those of the European Union and other developed countries around the world; have shown growing interest in clean energy, and have been concentrating on the development of new energy-saving materials and devices. Typical non-fossil-fuel sources include solar cells, wind power, tidal power, nuclear power, and fuel cells. In particular, organic solar cells(OSCs) have relatively low power-conversion efficiency(PCE) in comparison with inorganic(silicon) based solar cells, compound semiconductor solar cells and the CIGS [$Cu(In_{1-x}Ga_x)Se_2$] thin film solar cells. Recently, organic cell efficiencies greater than 10 % have been obtained by means of the development of new organic semiconducting materials, which feature improvements in crystalline properties, as well as in the quantum-dot nano-structure of the active layers. In this paper, a brief overview of solar cells in general is presented. In particular, the current development status of the next-generation OSCs including their operation principle, device-manufacturing processes, and improvements in the PCE are described.

Synthesis of Microporous Zeolitic Membranes and Application in Alcohol/water Separation (다공성 제올라이트 멤브레인의 합성 및 알코올 /물 분리에의 응용)

  • 김건중;남세종
    • Membrane Journal
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    • v.9 no.2
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    • pp.97-106
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    • 1999
  • A and 2SM-5 type zeoli tic crystal films were synthesized on porous supports from the reaction mixture of 1.9 ${SiO}_2$1.5 $Na_20-Al_2O_3-40$ $H_20$ and $Si0_2$-0.l3 $Na_2O$-52 $H_20$-O.l2 TPAOH composition, respectively. The zeolite films were characterized by XRD and SEM. The 2SM -5 crystals grown on the porous matrix were very closely bound together. It was so difficult to obtain the perfectly intergrown crystals in the case of A-type zeolite and this crystal was transformed into P-type zeolite membrane with a prolonged reaction time. The densely intergrown A type zeolite crystal membrane could be also synthesized by the hydrothermal treatment at 100$^{\cirt}C$ after pressing the reaction mixture without addition of water. The pervaporation performance of the synthesized porous inorganic membranes was investigated for alcohol and water mixtures. A-type zeolite membrane crystallized as a thin film showed the selective \'Jermeability of water from the mixtures through the molecular sieving activity of micropores.

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SiOC Anode Material Derived from Poly(phenyl carbosilane) for Lithium Ion Batteries

  • Lee, Yoon Joo;Ryu, Ji Yeon;Roh, Kwang Chul;Kim, Soo Ryong;Kwon, Woo Teck;Shin, Dong-Geun;Kim, Younghee
    • Journal of the Korean Ceramic Society
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    • v.50 no.6
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    • pp.480-484
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    • 2013
  • Since SiOC was introduced as an anode material for lithium ion batteries, it has been studied with different chemical compositions and microstructures using various silicon based inorganic polymers. Poly(phenyl carbosilane) is a SiOC precursor with a high carbon supply in the form of the phenyl unit, and it has been investigated for film applications. Unlike any other siloxane-based polymers, oxygen atoms must be utilized in an oxidation process, and the amount of oxygen is controllable. In this study, SiOC anodes were prepared using poly(phenyl carbosilane) with different heat treatment conditions, and their electrochemical properties as an anode material for lithium ion batteries were studied. In detail, cyclic voltammetry and charge-discharge cycling behavior were evaluated using a half-cell. A SiOC anode which was prepared under a heat treatment condition at $1200^{\circ}C$ after an oxidation step showed stable cyclic performance with a reversible capacity of 360 mAh/g.

Fabrication and Characterization Nano Porous Anodic ZrO2 Membranes by Two-Step Anodizing (2 단계 양극 산화를 이용한 ZrO2 나노 다공성 산화막의 제조와 특성에 관한 연구)

  • Seo, Eui-Young;Choi, Se-Kyeong;Shin, Ik-Soo;Kang, Wee-Kyung
    • Journal of the Korean Chemical Society
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    • v.57 no.5
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    • pp.547-553
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    • 2013
  • Zirconium oxide ($ZrO_2$) nano porous membranes were fabricated by electrochemical two-step anodization with an electropolished zirconium substrate in inorganic water-based and organic electrolyte systems containing small amounts of fluoride. Using two-step anodization and organic electrolytes, highly regular and ordered nanotubular $ZrO_2$ oxide layers can be compared with aqueous electrolytes. The morphology and size of the nano porous layers were characterized by FE-SEM (field emission scanning electron microscopy), XRD (X-ray diffraction), and EDS (energy dispersive spectroscopy). Luminescence properties were investigated by photoluminescence measurements.

FLIP CHIP ON ORGANIC BOARD TECHNOLOGY USING MODIFIED ANISOTROPIC CONDUCTIVE FILMS AND ELECTROLESS NICKEL/GOLD BUMP

  • Yim, Myung-Jin;Jeon, Young-Doo;Paik, Kyung-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.2
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    • pp.13-21
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    • 1999
  • Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.

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