• Journal of the Korea Organic Resources Recycling Association
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• v.30 no.4
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• pp.15-25
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• 2022

In this study, the efficiency of treatment of moisture and organic matter in food waste was analyzed according to the air blast volume and preheating using the bio-drying method. Te mount of air blast volume and preheating were determined by the evaluation of temperature and CO2 during food waste treatment using the bio-drying method. As a results, the increase in the air blast volume increased the moisture removal efficiency and removal rate, but, lowered the temperature inside the bio-drying by the decease in microbial activity. In order to maintain the activity of microorganisms, it was estimated that it was necessary to inject an appropriate air blast rate according th the properties of the food waste. In this study, the injection of air blast volume at 15L/min was optimal. It was evaluated that the organic matter and water removal rates according to the presence or absence of air preheating, the organic matter removal rate and water removal rate increased by 3-5% when air preheating was not performed. Also, there was no internal aggregation caused by the generation of condensate inside the bio-drying. Therefore, for effective bio-drying of food waste, it is necessary to maintain an appropriate air blast volume to maintain microbial activity, and it is considered that injection through preheating of air is required.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.