• Title/Summary/Keyword: Infrared Absorption Layer

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Improved Device Performance Due to AlxGa1-xAs Barrier in Sub-monolayer Quantum Dot Infrared Photodetector

  • Han, Im Sik;Byun, Young-Jin;Lee, Yong Seok;Noh, Sam Kyu;Kang, Sangwoo;Kim, Jong Su;Kim, Jun Oh;Krishna, Sanjay;Ku, Zahyun;Urbas, Augustine;Lee, Sang Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.298-298
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    • 2014
  • Quantum dot infrared photodetectors (QDIPs) based on Stranski-Krastanov (SK) quantum dots (QDs) have been widely explored for improved device performance using various designs of heterostructures. However, one of the biggest limitations of this approach is the "pancake" shape of the dot, with a base of 20-30 nm and a height of 4-6 nm. This limits the 3D confinement in the quantum dot and reduces the ratio of normal incidence absorption to the off-axis absorption. One of the alternative growth modes to the formation of SK QDs is a sub-monolayer (SML) deposition technique, which can achieve a much higher density, smaller size, better uniformity, and has no wetting layer as compared to the SK growth mode. Due to the advantages of SML-QDs, the SML-QDIP design has attractive features such as increased normal incidence absorption, strong in-plane quantum confinement, and narrow spectral wavelength detection as compared with SK-DWELL. In this study, we report on the improved device performance of InAs/InGaAs SML-QDIP with different composition of $Al_xGa1-_xAs$ barrier. Two SML-QDIPs (x=0.07 for sample A and x=0.20 for sample B) are grown with the 4 stacks 0.3 ML InAs. It is investigated that sample A with a confinement-enhanced (CE) $Al_{0.22}Ga_{0.78}As$ barrier had a single peak at $7.8{\mu}m$ at 77 K. However, sample B with an $Al_{0.20}Ga_{0.80}As$ barrier had three peaks at (${\sim}3.5{\mu}m$, ${\sim}5{\mu}m$, ${\sim}7{\mu}m$) due to various quantum confined transitions. The measured peak responsivities (see Fig) are ~0.45 A/W (sample A, at $7.8{\mu}m$, $V_b=-0.4V$ bias) and ~1.3 A/W (sample B, at $7{\mu}m$, $V_b=-1.5V$ bias). At 77 K, sample A and B had a detectivity of $1.2{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-0.4V$ bias) and $5.4{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-1.5V$ bias), respectively. It is obvious that the higher $D^*$ of sample B (than sample A) is mainly due to the low dark current and high responsivity.

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Fabrication of Schottky Device Using Lead Sulfide Colloidal Quantum Dot

  • Kim, Jun-Kwan;Song, Jung-Hoon;An, Hye-Jin;Choi, Hye-Kyoung;Jeong, So-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.189-189
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    • 2012
  • Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

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Adhesion of Model Molecules to Metallic Surfaces, the Implications for Corrosion Protection

  • de Wit, J.H.W.;van den Brand, J.;de Wit, F.M.;Mol, J.M.C.
    • Corrosion Science and Technology
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    • v.7 no.1
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    • pp.50-60
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    • 2008
  • The majority of the described experimental results deal with relatively pure aluminium. Variations were made in the pretreatment of the aluminum substrates and an investigation was performed on the resulting changes in oxide layer composition and chemistry. Subsequently, the bonding behavior of the surfaces was investigated by using model adhesion molecules. These molecules were chosen to represent the bonding functionality of an organic polymer. They were applied onto the pretreated surfaces as a monolayer and the bonding behavior was studied using infrared reflection absorption spectroscopy. A direct and clear relation was found between the hydroxyl fraction on the oxide surfaces and the amount of molecules that subsequently bonded to the surface. Moreover, it was found that most bonds between the oxide surface and organic functional groups are not stable in the presence of water. The best performance was obtained using molecules, which are capable of chemisorption with the oxide surface. Finally, it was found that freshly prepared relatively pure aluminum substrates, which are left in air, rapidly lose their bonding capacity towards organic functional groups. This can be attributed to the adsorption of contamination and water to the oxide surface. In addition the adhesion of a typical epoxy-coated aluminum system was investigated during exposure to water at different temperatures. The coating was found to quite rapidly lose its adhesion upon exposure to water. This rapid loss of adhesion corresponds well with the data where it was demonstrated that the studied epoxy coating only bonds through physisorptive hydrogen bonding, these bonds not being stable in the presence of water. After the initial loss the adhesion of the coating was however found to recover again and even exceeded the adhesion prior to exposure. The improvement could be ascribed to the growth of a thin oxyhydroxide layer on the aluminum substrate, which forms a new, water-stable and stronger bond with the epoxy coating. Two routes for improvement of adhesion are finally decribed including an interphasial polymeric thin layer and a treatment in boiling water of the substrate before coating takes place. The adhesion properties were finely also studied as a function of the Mg content of the alloys. It was shown that an enrichment of Mg in the oxide could take place when Mg containing alloys are heat-treated. It is expected that for these alloys the (hydr)oxide fraction also depends on the pre-treatment and on the distribution of magnesium as compared to the aluminium hydroxides, with a direct impact on adhesive properties.

Failure Analysis of LV URD Cable based on FMEA (FMEA에 근거한 LV URD 케이블의 고장분석)

  • Shong, Kil-Mok;Han, Woon-Ki;Kim, Young-Seok;Kim, Sun-Gu;Kwak, Hee-Ro
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.21 no.5
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    • pp.90-98
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    • 2007
  • The objective of this investigation was to reveal the cause of the faulted cable(LV URD(low voltage underground) cable). For the analysis, various types or equipments such as external pattern, thermal pattern, surface structure, thermal analysis, and property distribution were deployed. The international standards and the specification provided by the manufacturer of faulted cable were examined whether it fit the standards. The summary is as follows. (1) Discovered as a factor lowering insulation performance of the faulted cable: minimum thickness of the insulation layer specified by IEC 60502-1 and IEC 60811-1-1 was not fit. (2) Infrared absorption peaks measured by FT-IR spectrometer revealed that the measurements made for the same material did not conform and it is an important basis for proving heterogeneous composition of the insulation material. (3) It was found that PVC bedding was thermally fragile and therefore long term exposure at the site could cause similar fault pattern.

Comparison of Passivation Property on Hydrogenated Silicon Nitrides whose Antireflection Properties are Identical (반사방지 특성을 통일시킨 실리콘 질화막 간의 패시베이션 특성 비교)

  • Kim, Jae Eun;Lee, Kyung Dong;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Korean Journal of Materials Research
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    • v.26 no.1
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    • pp.47-53
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    • 2016
  • Silicon nitride ($SiN_x:H$) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride ($SiN_x:H$) films made by PECVD. The passivation properties of $SiN_x:H$ are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane ($SiH_4$) and ammonia ($NH_3$) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.

Structural and Optical Properties of SnS Thin Films Deposited by RF Magnetron Sputtering (RF 마그네트론 스퍼터링법으로 제조한 SnS 박막의 구조적 및 광학적 특성)

  • Hwang, Donghyun
    • Journal of the Korean institute of surface engineering
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    • v.51 no.2
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    • pp.126-132
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    • 2018
  • SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

Synthesis of TiO2-Fe2O3 Nanocomposite Powders for Magnetic Photocatalyst (자성광촉매용 TiO2-Fe2O3 나노복합분말의 합성)

  • Lee Chang-Woo;Kim Soon-Gil;Yun Sung-Hee;Lee Jai-Sung;Choa Yong-Ho
    • Korean Journal of Materials Research
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    • v.15 no.8
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    • pp.508-513
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    • 2005
  • [ $TiO_2-Fe_2O_3$ ] nanocomposite powders for magnetic photocatalyst were synthesized by sol-gel process, in which $TiO_2$ photocatalytic layer was formed on the surface of $\gamma-Fe_2O_3$ magnetic core. Transmission electron microscopy (TEM) observation and X-ray diffractometry (XRD) analysis revealed that$\gamma-Fe_2O_3$ nanoparticles, $10\~20nm$ in diameter, were coated by $TiO_2$ shell of 5nm in thickness and $TiO_2$ was anatase phase. Also hydroxyl group (-OH) used to decompose organic compounds was detected by Fourier transformation infrared spectrometry(FT-IR) analysis. UV-Visible spectrophotometry results showed that light absorption occurred in the wavelength range of $400\~700 nm$, and the band gap energy $(E_g)$ of powder was 1.8 eV. Finally it was found that the coercivity $(H({ci})$ and saturation magnetization $(M_s)$ of the powder were 79 Oe and 14.8 emu/g, respectively as experimental vibrating sample magnetometer (VSM) measurements.

Adsorption Behaviors of Metal Elements onto Illite and Halloysite (일라이트, 할로이사이트에 대한 중금속 원소의 흡착특성)

  • 추창오;김수진;정찬호;김천수
    • Journal of the Mineralogical Society of Korea
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    • v.11 no.1
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    • pp.20-31
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    • 1998
  • Adsorption of metal elements onto illite and halloysite was investigated at $25^{\circ}C$ using pollutant water collected from the gold-bearing metal mine. Incipient solution of pH 3.19 was reacted with clay minerals as a function of time: 10 minute, 30 minute, 1 hour, 12 hour, 24 hour, 1 day, 2 day, 1 week, and 2 week. Twenty-seven cations and six anions from solutions were analyzed by AAs (atomic absorption spectrometer), ICP(induced-coupled plasma), and IC (ion chromatography). Speciation and saturation index of solutions were calculated by WATEQ4F and MINTEQA2 codes, indicating that most of metal ions exist as free ions and that there is little difference in chemical species and relative abundances between initial solution and reacted solutions. The adsorption results showed that the adsorption extent of elements varies depending on mineral types and reaction time. As for illite, adsorption after 1 hour-reaction occurs in the order of As>Pb>Ge>Li>Co, Pb, Cr, Ba>Cs for trace elements and Fe>K>Na>Mn>Al>Ca>Si for major elements, respectively. As for halloysite, adsorption after 1 hour-reaction occurs in the order of Cu>Pb>Li>Ge>Cr>Zn>As>Ba>Ti>Cd>Co for trace elements and Fe>K>Mn>Ca>Al>Na>Si for major elements, respectively. After 2 week-reaction, the adsorption occurs in the order of Cu>As>Zn>Li>Ge>Co>Ti>Ba>Ni>Pb>Cr>Cd>Se for trace elements and Fe>K>Mn>Al, Mg>Ca>Na, Si for major elements, respectively. No significant adsorption as well as selectivity was found for anions. Although halloysite has a 1:1 layer structure, its capacity of adsorption is greater than that of illite with 2:1 structure, probably due to its peculiar mineralogical characteristics. According to FTIR (Fourier transform infrared spectroscopy) results, there was no shift in the OH-stretching bond for illite, but the ν1 bond at 3695 cm-1 for halloysite was found to be stronger. In the viewpoint of adsorption, illite is characterized by an inner-sphere complex, whereas halloysite by an outer-sphere complex, respectively. Initial ion activity and dissociation constant of metal elements are regarded as the main factors that control the adsorption behaviors in a natural system containing multicomponents at the acidic condition.

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Design and Fabrication of SiO2/TiO2 Multi Layer Thin Films on Silicon Encapsulation of LED Deposited by E-beam Evaporation for NIR Narrow Band Pass Filter Application (NIR 협대역 투과 필터 응용을 위한 LED 실리콘 봉지재 위에 직접 E-beam으로 증착 된 SiO2/TiO2 다층 박막 설계 및 제작)

  • Kim, Dong Pyo;Kim, Kyung-Seob;Kim, Goo-Cheol;Jeong, Jung-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.2
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    • pp.165-171
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    • 2022
  • The SiO2/TiO2 multilayer thin films used for narrow band pass filter were fabricated using E-beam evaporation method. The narrow band pass filter was used to enhance the resolution of spectroscopy and sensor applications with near infrared (NIR) light source. The narrow band pass filter with multilayer thin films were designed with Essential Macleod program. The multilayers of SiO2/TiO2 with 32 layers were deposited on the silicon encapsulation of IR with peak wavelength (λp) of 660 nm and NIR LEDs with λp of 830 nm, 880 nm, and 955 nm. After NIR light passed through the narrow band pass filter, the full width of half maximum of 33.4~48.6 nm became narrow to 20~24 nm owing to the absorption of photons with short or long wavelength of designed band of 20 nm. The SiO2/TiO2 band pass filter fabricated in this study can be used for sensor, optoelectronics, and NIR spectroscopy applications.

Retrieval of Nitrogen Dioxide Column Density from Ground-based Pandora Measurement using the Differential Optical Absorption Spectroscopy Method (차등흡수분광기술을 이용한 지상기반 Pandora 관측으로부터의 대기 중 이산화질소 칼럼농도 산출)

  • Yang, Jiwon;Hong, Hyunkee;Choi, Wonei;Park, Junsung;Kim, Daewon;Kang, Hyeongwoo;Lee, Hanlim;Kim, Joon
    • Korean Journal of Remote Sensing
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    • v.33 no.6_1
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    • pp.981-992
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    • 2017
  • We, for the first time, retrieved tropospheric nitrogen dioxide ($Trop.NO_2$) vertical column density (VCD) from ground-based instrument, Pandora, using the optical density fitting based on Differential Optical Absorption Spectroscopy (DOAS)in Seoul for the period from May 2014 to December 2014. The $Trop.NO_2$ VCDs retrieved from Pandora were compared with those obtained from Ozone Monitoring Instrument (OMI). A correlation coefficient (R) between those retrieved from Pandora and those obtained from OMI is 0.55. To compare with surface $NO_2$ VMRs obtained from in-situ, Trop. $NO_2$ VCDs retrieved from Pandora and those obtained from OMI are converted into $NO_2$ VMRs in boundary layer (BLH $NO_2$ VMRs) using data measured from Atmospheric Infrared Sounder (AIRS). Surface $NO_2$ VMRs obtained from in-situ range from 5.5 ppbv to 61.5 ppbv. BLH $NO_2$ VMRs retrieved from Pandora and OMI range from 2.1 ppbv to 44.2 ppbv and from 0.9 ppbv to 11.6 ppbv, respectively. The range of BLH $NO_2$ VMRs retrieved from OMI is narrower than that of BLH $NO_2$ VMRs retrieved from Pandora and surface $NO_2$ VMRs obtained from in-situ. There is a batter correlation between surface $NO_2$ VMRs obtained from in-situ and BLH $NO_2$ VMRs retrieved from Pandora (R= 0.50)than the correlation between surface $NO_2$ VMRs obtained from in-situ and BLH $NO_2$ VMRs retrieved from OMI (R = 0.36). This poor correlation is thought to be due to the lower near-surface sensitivity of the satellite-based instrument (OMI) than Pandora, the ground-based instrument.