• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.191-194
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• 1999

The balanced amplifier is a practical amplifier to, implement a broadband amplifier that has flat gain and good input and output VSWR. Three-stage amplifier design procedure usually divided into three partition satisfying the following requirements : low noise figure, high gain and high power output. FHX35LG HEMT device is used in the design can be obtained low noise figure at the first-stage, MGA82563 MMIC device is used in the design can be maintained high gain at the second-stage, and AHI MMIC device is used in the design can be required high power output at the third-stage. The results of three-stage balanced amplifier show that power gain is about 40㏈, noise figure is less than 1.2㏈ at operating frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.3
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• pp.632-638
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• 2011

This paper presents on-chip Design-for-Testability (DFT) circuit for radio frequency System-on-Chip (SoC) applications. The proposed circuit measures functional specifications of RF integrated circuits such as input impedance, gain, noise figure, input voltage standing wave ratio (VSWRin) and output signal-to-noise ratio (SNRout) without any expensive external equipment. The RF DFT scheme is based on developed theoretical expressions that produce the actual RF device specifications by output DC voltages from the DFT chip. The proposed DFT showed deviation of less than 2% as compared to expensive external equipment measurement. It is expected that this circuit can save marginally failing chips in the production testing as well as in the RF system; hence, saving tremendous amount of revenue for unnecessary device replacements.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.6
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• pp.545-550
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• 2013

We present a tactile information transceiver using a friction-tunable slider-pad. While previous tactile information devices were focused on either input or output functions, the present device offers lateral position/vertical direction detection and texture expression. In characterizing the tactile input performance, we measured the capacitance change due to the displacement of the slider-pad. The measured difference for a z-axis click was 0.146 nF/$40{\mu}m$ when the x-y axis navigation showed 0.09 nF/$750{\mu}m$ difference. In characterizing the texture expression, we measured the lateral force due to a normal load. We applied a voltage between parallel electrodes to induce electrostatic attraction in DC and AC voltages. We measured the friction under identical fingertip action conditions, and obtained friction in the range of 32-152 mN and lateral vibration in the force range of 128.1 mN at 60 V, 2 Hz. The proposed device can be applied to integrated tactile interface devices for mobile appliances.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.9
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• pp.2006-2013
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• 2015

Deaf are it is difficult to communicate to represent the voice heard, so theay use mostly using the speech, sign language, writing, etc. to communicate. It is the best way to use sign language, in order to communicate deaf and normal people each other. But they must understand to use sign language. In this paper, we designed and implementated finger language translation system to support communicate between deaf and normal people. We used leap motion as input device that can track finger and hand gesture. We used raspberry pi that is low power sing board computer to process input data and translate finger language. We implemented application used Node.js and MongoDB. The client application complied with HTML5 so that can be support any smart device with web browser.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.4
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• pp.275-283
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• 2021

In this study, a driver IC for an AC-powered LED that can be manufactured with a low voltage semiconductor process is designed and the performances of the driver IC were simulated. In order to manufacture a driver IC that operates directly at AC 220V, a semiconductor manufacturing process that satisfies a breakdown voltage of 500V or higher is required. A semiconductor manufacturing process for a high-voltage device requires a much higher manufacturing cost than a general semiconductor process for a low-voltage device. Therefore, the LED driver IC is designed in series so that it can be manufactured with semiconductor process technology that implements a low-voltage device. This makes it possible to divide and apply the voltage to each LED block even if the input voltage is high. The LED lighting circuit shows a power factor of 96% at 220V. In the pnp transistor circuit, a very high power factor of 99.7% can be obtained, and it shows a very stable operation regardless of the fluctuation of the input voltage.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.10 no.4
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• pp.135-142
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• 2011

This paper proposes a performance evaluation method for power consumption of set-top box (STB) stand-by mode transition schemes. A stand-by mode transition scheme characterizes the timing of mode transition. The timing of mode transition affects the duration of stand-by mode operation, and the power consumptions of STB as well. Recently a fast stand-by mode transition scheme (FMT) has been proposed based on user input for selecting the device to be connected to TV. In this paper, we evaluate power consumption of FMT and a conventional mode transition scheme. For the computation of the duration of stand-by mode operation, the user input events are modeled as Poisson process. Simulation results based on the modeling reveals that the proposed scheme is more effective in power saving than the conventional scheme by up to 30%.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.818-823
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• 2003

본 논문에서는 입력 매칭(input matching) BIST(Built-In Self-Test) 회로를 이용한 RF font end의 새로운 결함 검사방법을 제안한다. BIST 회로를 가진 RF front end는 1.8GHz LNA(Low Noise Amplifier: 저 잡음 증폭기)와 이중 대칭 구조의 Gilbert 셀 믹서로 구성되어 있으며, TSMC 0.25$\mu\textrm{m}$ CMOS 기술을 이용하여 설계되었다. catastrophic 결함 및 parametric 변동을 가진 RF front end와 결함을 갖지 않은 RF front end를 판별하기 위해 RF front end의 입력 전압 특성을 조사하였다. 본 방법에서는 DUT(Device Under Test: 검사대상이 되는 소자)와 BIST 회로가 동일한 칩 상에 설계되어 있기 때문에 측정할 때 단지 디지털 전자계와 고주파 전압 발생기만이 필요하며, 측정이 간단하고 비용이 저렴하다는 장점이 있다. BIST 회로가 차지하는 면적은 RF front end가 차지하는 전체면적의 약 10%에 불과하다. 본 논문에서 제안하는 검사기술을 이용하여 시뮬레이션해 본 결과 catastrophic 결함에 대해서는 100%, parametric 변동에 대해서는 약 79%의 결함을 검출할 수 있었다.

• Proceedings of the Korean Society of Computer Information Conference
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• 2016.01a
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• pp.215-216
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• 2016

본 논문에서는 물리적 버튼이 존재하지 않는 평면방식의 스마트 기기를 시각 장애인이 기존 음성 인식 기반의 문자 입력 방식 대비 3배 이상 빠른 속도로 문자를 입력할 수 있는 제스처 기반 가상 문자 입력 방법을 제안한다. 제안하는 방식의 원리는 스마트폰의 터치화면을 8개 방향으로 설정하고 사용자의 드래그 동작에 따른 입력값의 초기위치와 중앙점, 드래그 형태 등을 이용하여 숫자, 영문, 한글, 특수기호 등을 입력하거나, 스마트기기의 다양한 응용 프로그램들을 자연스럽게 제어하고 동작시킬 수 있는 제스처 기반의 문자입력 방법이다. 실제 시각장애인의 필드 테스트를 통해 제안하는 방식의 효율성을 입증해보인다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.902-905
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• 2006

This paper presents a new RF testing scheme based on a design-for-testability (DFT) method for measuring functional specifications of RF integrated circuits (IC). The proposed method provides input impedance. gain, noise figure. input voltage standing wave ratio (VSWR) and output signal-to-noise ratio (SNR) of a low noise amplifier (LNA). The RF test scheme is based on theoretical expressions that produce the actual RF device specifications by output DC voltages from the DR chip.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.330-334
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• 1999

This paper presents a new transient voltage blocking device (TBD) for commucation facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, the new TBD, which consists of a gas tube, avalanche diodes and junction type field effect transistors (JFETs), was designed and fabricated JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche diodes with low energy capacity are protected from the high current, and the TBD has a very small input capacitance. From the performance test using surge generator, which can produce 1.2/50${\mu}\textrm{s}$ 4.2 k$V_{max}$, 8/20${\mu}\textrm{s}$ 2.1 kA$\sub$max/, it is confirmed that the proposed TBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.