• Title/Summary/Keyword: Inductance and Quality factor

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Input Impedance and Current Feedforward Control of Single-Phase Boost PFC Converters

  • Park, Sungmin;Park, Sung-Yeul;Bazzi, Ali M.
    • Journal of Power Electronics
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    • 제15권3호
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    • pp.577-586
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    • 2015
  • The combination of voltage feedforward and feedback control is a conventional approach for correcting the power factor in single-phase ac-dc boost converters. The feedback duty ratio increases significantly with an increase of the line frequency and input inductance. Therefore, the performance of the conventional approach is highly dependent on the bandwidth of the feedback controller. As a result, the input power quality can be significantly exacerbated due to uncompensated duty ratios if the feedback controller is limited. This paper proposes an input impedance and current feedforward control method to reduce the control portion of the feedback controller. The findings in this paper are 1) the theoretical derivation and analysis of variations of line frequency and input inductance on a power factor correction approach, 2) guaranteed consistent performance in a wide range of conditions, and 3) that a low switching frequency can be utilized by the proposed method. A MATLAB/Simulink model and a 1.2kW dual boost converter are built to demonstrate the effectiveness of the proposed method.

A Simple Model Parameter Extraction Methodology for an On-Chip Spiral Inductor

  • Oh, Nam-Jin;Lee, Sang-Gug
    • ETRI Journal
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    • 제28권1호
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    • pp.115-118
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    • 2006
  • In this letter, a simple model parameter extraction methodology for an on-chip spiral inductor is proposed based on a wide-band inductor model that incorporates parallel inductance and resistance to model skin and proximity effects, and capacitance to model the decrease in series resistance above the frequency near the peak quality factor. The wide-band inductor model does not require any frequency dependent elements, and model parameters can be extracted directly from the measured data with some curve fitting. The validity of the proposed model and parameter extraction methodology are verified with various size inductors fabricated using $0.18\;{\mu}m$ CMOS technology.

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Static and Dynamic Testing Technique of Inductor Short Turn

  • Piyarat, W.;Tipsuwanporn, V.;Tarasantisuk, C.;Kummool, S.;Im, T.Sum
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1999년도 제14차 학술회의논문집
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    • pp.281-283
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    • 1999
  • This topic presents an inductor short turn testing. From the rudimentary principles, the quality factor(Q) decreases due to inductor short turn. Frequency response varies because of the variation of circuit inductance and resistance. In general, short turn circuit testing is performed by comparing the ratio of an inductance and resistance of inductor in that particular circuit. An alternative method can be done by considering the response of second order circuit which can give both dynamic and static testing, whereas static testing give an error results not more than 2 turns. For dynamic testing, the result is more accurate, which can test fur the short turn number form 1 turn onward.

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2층 대칭 나선형 인덕터에 대한 주파수 특성 연구 (Study on Frequency Characteristics for Double-Layer Symmetric Spiral Inductor)

  • 김재욱
    • 한국정보전자통신기술학회논문지
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    • 제15권5호
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    • pp.315-320
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    • 2022
  • 일반적인 나선형 인덕터의 경우에 비대칭 구조를 가짐에 따라 포트의 방향에 영향을 받게 된다. 본 논문에서는 2층이면서 대칭 구조를 가질 수 있는 나선형 인덕터를 제안하고 시뮬레이션 및 주파수 특성을 분석하였다. 기존 단층 대칭형 인덕터가 3.9~4.2nH의 인덕턴스를 갖는 것과 비교하여 제안된 2층 대칭 나선형 인덕터는 포트에 변함없이 0.3~1.2GHz 범위에서 11~12nH의 인덕턴스, 800MHz에서 약 4.4의 품질계수, 약 2.7~2.8GHz의 자기공진주파수를 가진다. 이는 기존 일반적인 나선형 인덕터가 포트에 따라 큰 차이를 갖는 것과 비교하여 포트의 방향에 대한 영향이 적은 것을 확인할 수 있었다.

고성능의 초소형 RF 칩 인덕터 개발 (Development of High-Performance Ultra-small Size RF Chip Inductors)

  • 윤의중;천채일
    • 한국전기전자재료학회논문지
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    • 제17권3호
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    • pp.340-347
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    • 2004
  • Ultra-small size, high-performance, solenoid-type RF chip inductors utilizing low-loss A1$_2$O$_3$ core materials were investigated. The dimensions of the RF chip inductors fabricated were 1.0mm${\times}$0.5mm${\times}$0.5mm and copper coils were used. The materials (96% A1$_2$O$_3$) and shape (I-type) of the core, the diameters (40${\mu}{\textrm}{m}$) and position (middle) of the coil, and the lengths (0.35mm) of solenoid were determined by a high-frequency structure simulator (HFSS) to maximize the performance of the inductors. The high-frequency characteristics of the inductance (L) and quality-factor (Q) of the developed inductors were measured using a RF impedance/material analyzer (E4991A with E16197A test fixture). The developed inductors exhibit an inductance of 11 to 11.3nH and a qualify factor of 22.3 to 65.7 over the frequency ranges of 250 MHz to 1.7 GHz, and show results comparable to those measured for the inductors prepared by Coilcraft$^{TM}$. The simulated data described the high-frequency data of the L and Q of the fabricated inductors well.

자성물질을 이용한 나선형 인덕터의 고주파 특성 분석 (Characterization and Analysis of Integrated RF Ferromagnetic Spiral Inductors)

  • 차승용;김경범;정영채;최윤석;조근휘;이재성;황성우;현응경;이성래
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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    • pp.109-111
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    • 2006
  • This paper presents characterization and analysis of integrated ferromagnetic inductors in RF regime. Two different materials (CoFe/NiFe) are used as ferromagnetic material. Systematic studies of the inductance (L), the Q-factor (Q) and the structure of the inductor have been performed.

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SoC공정에 적용 가능한 Spiral Inductor의 특성 연구 (Characterization of Spiral Inductor possible in SoC processing)

  • 고재형;하상훈;김형석
    • 한국정보통신설비학회:학술대회논문집
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    • 한국정보통신설비학회 2006년도 하계학술대회
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    • pp.153-157
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    • 2006
  • 본 논문에서는 SoC 공정에 적용 가능한 spiral 인덕터의 특성에 대해 다루었다. 일정한 크기의 인덕터에서 턴 수의 변화에 따른 인덕턴스와 Q-factor의 변화를 보았다. HFSS 프로그램을 사용하여 턴 수와 선로의 폭이 같은 조건하에서 사각형 구조와 팔각형 구조를 갖는 인덕터의 인덕턴스와 Q-factor의 ?냅? 계산하였다. 사각형 구조와 팔각형 구조 모두 선로 폭 보다는 턴 수가 증가할수록 인덕턴스가 증가하였다. 턴 수가 증가할수록 Q-factor의 값은 사각형 구조는 감소한 반면 팔각형 구조는 증가하였다. spiral과 실리콘 사이에 PGS(Patterned Ground Shield)를 삽입하여 인덕턴스 및 Q-factor의 변화를 비교 분석하였다. 그 결과 PGS의 사용으로 사각형 구조와 팔각형 구조에서 턴 수에 따라 Q-factor의 값이 구조에 따라 서로 다른 방향으로 증감하는 것을 확인할 수 있었다.

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Double rectangular spiral thin film inductor의 제조에 관한 연구 (A study on the fabrication of double rectangular spiral thin film inductor)

  • 김충식;신동훈;정종한;남승의;김형준
    • 한국진공학회지
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    • 제8권4A호
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    • pp.461-464
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    • 1999
  • Planar type thin film inductors have a potential for the application of miniaturized DC-DC converters. For those high current applications, the magnetic film with high current capability is required. The current capability of magnetic films is mainly determined from high saturation magnetization (4$\piM_s$) as well as large anisotropy field $(H_k)$. We fabricated a double rectangular spiral thin film inductor which consist of magnetic layer, coil and insulator. Highest inductance values as well as best frequency characteristics can be obtained from 5 MHz and quality factor exhibit about 7.

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A High Performance Solenoid-Type MEMS Inductor

  • Seonho Seok;Chul Nam;Park, Wonseo;Kukjin Chun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권3호
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    • pp.182-188
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    • 2001
  • A solenoid-type MEMS inductor with a quality factor over 10 at 2 GHz has been developed using an electroplating technique. The integrated spiral inductor has a low Q factor due to substrate loss and skin effects. It also occupies a large area compared to the solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower the substrate loss and other interference with integrated passive components. To estimate the characteristics of the proposed inductor over a high frequency range, the 3D FEM (Finite Element Method) simulation is used by using the HFSS at the Ansoft corporation. The electroplated solenoid-type inductor is fabricated on a glass substrate step by step by using photolithography and copper electroplating. The fabrication process to improve the quality factor of the inductor is also developed. The achieved inductance varies within a range from 0.5 nH to 2.8 nH, and the maximum Q factor is over 10.

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RF 인덕터의 Underpass에 따른 품질 계수 및 항복전압 특성 (Effect of Uderpass Structure on Quality Factor and Breakdown Voltage in RF Inductor)

  • 신종관;권성규;장성용;정진웅;유재남;오선호;김철영;이가원;이희덕
    • 한국전기전자재료학회논문지
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    • 제27권6호
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    • pp.356-360
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    • 2014
  • In this paper, the effect of underpass structure on quality factor and breakdown voltage of octagonal inductors which were fabricated with 90 nm complementary metal-oxide-semiconductor (CMOS) technology for radio frequency integrated circuit (RFIC) was studied. It was found that quality factor and breakdown voltage of inductors with more than one metal layer for underpass showed improved properties compared to those with one metal layer. However, little change of quality factor and breakdown voltage was observed between the inductors with two and more than two metal layers for underpass. Therefore, underpasses with two metal layers are promising for RFIC designs of the octagonal inductors in 90 nm CMOS technology.