• Title/Summary/Keyword: Induced voltages

검색결과 167건 처리시간 0.123초

d-q 등가회로를 이용한 이중여자 유도발전기 보호 (Protection for DFIG using the d-q Equivalent Circuit)

  • 강용철;이지훈;강해권;장성일;김용균;박군철
    • 전기학회논문지
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    • 제57권12호
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    • pp.2173-2178
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    • 2008
  • A doubly-fed induction generator(DFIG) system has been widely used in the modem wind turbines due to variable-speed operation, high efficiency and small converter size. It is well known that an inter-turn fault of a generator is very difficult to be detected. The DFIG system uses a wound rotor induction machine so that the magnetizing current of the generator can be fed from both the stator and the rotor. This paper proposes a protection algorithm for a DFIG using the d-q equivalent circuit in the time domain. In the case of a DFIG, the voltages and currents of the rotor side as well as the voltages and currents of the stator are available. The proposed algorithm estimates the instantaneous(i.e., converted into the stationary frame) induced voltages from the rotor and the stator sides. If the difference between the two estimated induced voltages exceeds the threshold, the proposed algorithm detects the inter-turn fault. The algorithm can detect a inter-turn fault of a winding. The performance of the proposed algorithm is validated using a PSCAD/EMTDC simulator under inter-turn fault conditions and normal operating conditions such as an external fault and the change of the wind speed.

EMTP를 이용한 지중케이블의 도체 연가 영향 분석 (EMTP-analysis of Transposition Effects on Underground Transmission Cables)

  • 하체웅;한성흠;허회덕;이인호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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    • pp.93-94
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    • 2006
  • The sheath of a single-conductor cable for ac service acts as a secondary of a transformer, the current in the conductor induces a voltage in the sheath. When the sheaths of single-conductor cables are bonded to each other, as is common practice for multi-conductor cables, the induced voltage causes current to flow in the completed circuit. This current causes losses in the sheath. Various methods of bonding may be used for the purpose of minimizing sheath losses. In korea, sheath cross bonding system was employed for the prevention of sheath losses, the sheaths wire subjected to at voltages, and the bonding was designed to keep the magnitude of the induced voltages within small limits so as to prevent the possibility of sheath corrosion. But, sheath cross bonding system without transposition of cable can not achieve an exact balance of induced sheath voltages unless the cables are lain in trefoil. This paper describes a transposition system with sheath cross bonding using EMTP(Electromagnetic Transient Program). The transposition system with cross bonding can be extended to longer cable circuits for laid in flat as wall as trefoil by the methods described in this paper.

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고속전철에 의한 통신선로 전력유도 현상에 관한 고찰 (A Study on the Induced Voltages on Subscriber Telecommunication Lines from High-Speed Electrified Railway Line)

  • 오호석;강성용;윤주영;김학철;최경
    • 대한전자공학회논문지TC
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    • 제45권10호
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    • pp.71-79
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    • 2008
  • 본 논문은 고속 전기철도 시설로 인해 가입자 통신선로에서 발생하는 전력유도에 대한 현상과 관련 규정 및 유도전압 측정 결과를 분석한 것이다. 전력유도 현상의 명확한 이해를 돕기 위하여 이론적 배경을 제시하였고, 국내 법규에서 이상시유도위험전압, 상시유도위험종전압, 기기오동작유도종전압, 잡음전압 등으로 구분되는 유도전압 중에서 공통모드 전압에 해당하는 상시유도위험종전압과 잡음평형도 평가에 필요한 선대지잡음전압 및 차동모드전압인 선간잡음전압을 우리나라 고시 측정방법에 따라 측정하였다. 측정을 위해 이격거리가 각각 약 20 m와 300 m인 2 km 길이의 통신선로를 설치하여 실험하였으며 측정된 유도전압의 변화 및 파형 특성 등을 비교, 분석함으로써 고속전철에 의한 통신선로 전력유도 현상을 고찰하고 현행 측정방법의 타당성을 검토하였다.

III-V족 반도체에서 계단형 pn 접합의 해석적 항복전압 모델 (Analytical Model of Breakdown Voltages for Abrupt pn Junctions in III-V Binary Semiconductors)

  • 정용성
    • 대한전자공학회논문지SD
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    • 제41권9호
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    • pp.1-9
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    • 2004
  • III-V족 반도체 GaP GaAs 및 InP의 계단형 pn 접합에서의 항복전압을 위한 해석적 식을 유도하였다. 해석적 항복전압을 위해 각 물질에 대한 이온화계수 파라미터를 이용하여 유효 이온화계수를 추출하였고, 이의 이온화 적분을 통해 얻은 해석적 항복전압 결과는 수치적 결과 및 실험 결과와 10% 오차 범위 이내로 잘 일치하였다.

InP 다이오드에서 항복전압의 해석적 모델 (Analytical Model for Breakdown Voltages of InP Diodes)

  • 정용성
    • 전자공학회논문지 IE
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    • 제44권1호
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    • pp.10-14
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    • 2007
  • InP의 전자와 정공의 이온화계수로부터 추출한 유효이온화계수를 이용하여 InP 다이오드의 항복전압을 위한 해석적 표현식을 유도하였다. 해석적 항복전압 결과를 $N_D=6\times10^{14}cm^{-3}\sim3\times10^{17}cm^{-3}$의 도핑 농도에서 수치적 결과 및 실험 결과와 비교하였다. 각 농도에 따른 해석적 항복전압은 수치 해석적 결과와 매우 잘 일치하였고, 실험 결과와는 10% 이내의 오차로 잘 일치하였다.

AT 급전방식의 유도전압계산 알고리즘에 관한 연구 (A Study on the Induced Voltage Calculation Algorithm in the Electric Train)

  • 김한성;손필영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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    • pp.229-232
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    • 1988
  • Induced voltage causing disturbances on the communication lines of electric train is dealt with when the AT power supply system is employed. In the paper we obtain an algorithm to calculate the induced voltages on the communication lines in the AT system and an algorithm for the induced current in case of the accident that the line falls to the ground. These algorithms are developed to a package of computer programs and their validity was checked on a simulated system.

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22.9kV 배전선로와 병행하는 가스배관의 유도성 유도전압 해석 (Analysis of the induced voltage on the GAS pipelines buried in parallel with 22.9kV distribution line)

  • 이현구;하태현;배정효;김대경
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 하계학술대회 논문집 A
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    • pp.130-132
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    • 2002
  • Because of the continuous growth of energy consumption and also the tendency to site power lines and pipelines along the same route, the close proximity of power lines and buried metallic pipelines has become more and more frequent. Therefore there has been and still is a slowing concern about possible hazards resulting from the influence of power lines on metallic pipelines. Underground pipelines that run parallel to or in close proximity to power lines are subjected to induced voltages caused by the time-varying magnetic fields produced by the power line currents. The induced electro- motive force cause currents circulation in the pipeline and voltages between the pipeline and surrounding earth. This paper analyzes the induced voltage on the gas pipelines buried in parallel with 22.9kV distribution lines. Their magnitude depends on the length of parallelism and on the distance between distribution lines and pipeline.

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154kV 변전소의 전자계와 유도전압계산 (The calculatation of induced voltages and electromagnetic fields in 154kV sub)

  • 최창혁;한풍
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 E
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    • pp.1659-1662
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    • 1998
  • This paper is to analyze electromagnetic fields on a 154kV substation system and induced voltages on the substation fence when the network is operating in a normal condition or a fault condition in which one phase is shorted with the overhead ground wire. Also, changing the scalar potential and electromagnetic fields that are changed in accordance with changing resistivity and permeability of ground are studied. A finding of the study is that the scalar potential and electromagnetic fields are raised near the tower: The values of electric field on the corner of fence and at the edge of the ground grid are higher than other locations.

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뇌방전에 의한 유도전압의 측정에 대한 기초적 연구 (A Basic Study on the Measurement Induced Voltages due to Lightning Discharges)

  • 이복희;조성철;엄주홍;이우철
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2004년도 춘계학술대회 논문집
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    • pp.559-564
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    • 2004
  • This paper deals with the device for measuring the time-varying magnetic fields and induced voltages caused by lightning discharges. The two magnetic field measuring systems were designed and made. One consists of the loop-type magnetic field sensor with the active integrator operated by a differential amplifier. The other consists of the loop-type magnetic field sensor and Labview software. The loop-type magnetic field sensor detects the time derivative of the magnetic field being measured, and the signal detected is integrated by the Labview software. As a consequence, from the calibration experiments, the frequency bandwidth of the full measuring system ranges from 400 [Hz] to 1 (MHz) and the response sensitivity are 0.98 (mV/nT) and 22 (mV/nT) for the magnetic field sensor of 2 turns and 6 turns, respectively. Also, the results obtained by the two measuring devices well agreed with each other.

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An Analytical Model for Deriving the 3-D Potentials and the Front and Back Gate Threshold Voltages of a Mesa-Isolated Small Geometry Fully Depleted SOI MOSFET

  • Lee, Jae Bin;Suh, Chung Ha
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권4호
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    • pp.473-481
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    • 2012
  • For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, back, and side-wall oxide layers can be derived three-dimensionally. Using Taylor's series expansions of the trigonometric functions, the derived potentials are written in terms of the natural length that can be determined by using the derived formula. From the derived 3-D potentials, the minimum values of the front and the back surface potentials are derived and used to obtain the closed-form expressions for the front and back gate threshold voltages as functions of various device parameters and applied bias voltages. Obtained results can be found to explain the drain-induced threshold voltage roll-off and the narrow width effect of a fully depleted small geometry SOI MOSFET in a unified manner.