• Title/Summary/Keyword: Incident degree

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Tilt Angle Generation in NLC on Homeotropic Polymer Surface with Ion Beam Irradiation as a Function of Incident Angle

  • Lee, Sang-Keuk;Seo, Dae-Shik;Choi, Dai-Seub
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.3
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    • pp.120-122
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    • 2008
  • We have studied the tilt angle generation on the homeotropic polyimide (PI) surface using a low intensity ion beam source as a function of incident angle. An excellent LC alignment of nematic liquid crystal (NLC) on the PI surface with ion beam exposure for all incident angles was observed. The tilt angle of NLC on the homeotropic PI surface for all incident angles was from 90 to 88 degree was observed. Also the tilt angle of NLC on the homeotropic PI surface with ion beam exposure of 400 eV had a tendency to increase as ion beam energy incident angle become more instance from 45 degree. Finally, a good LC alignment thermal stability on the homeotropic PI surface with ion beam exposure can be achieved.

Characteristics of Optical Phase Conjugate Wave Generated by Self-Pumping in Photorefractive $BaTiO_3$ Single Crystal ($BaTiO_3$ 광굴절 결정에서 자기 펌핑에 의해 발생되는 위상공액파의 특성)

  • 이장두
    • Proceedings of the Optical Society of Korea Conference
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    • 1990.02a
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    • pp.157-161
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    • 1990
  • Self-pumped phase conjugation(SPPC) in BaTiO3 single crystal is experimentally investigated at a wavelength of 514.5nm from an Ar+ laser. The incident Gaussian beam enters the crystal as an extraordinary ray. The maximum SPPC reflectivity of 48% is obtained at incident angle 80 degree. the SPPC wave demonstrates good image reconstruction. The response time (r) of SPPC wave as a function of incident intensity is measured to be r=36$\times$I-0.79sec.

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Input impedance analysis of the coaxial to W/G type devices (동축전송선로에 연결된 도파관형 소자의 입력 임피던스 해석)

  • 이평화;천창율;신판석
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.11
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    • pp.9-19
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    • 1997
  • By noticing that most waveguide devices were connected to power source through coaxial line, three dimentional finite element analysis using TEM mode incident was tried. When tEM mode was used, being dissimilar to TE$_{10}$ mode incident, analysis model of TEM mode incident has almost the same geometry with real products. Therefore, the degree of trust about analysis result is improved. Reflection coefficients of coaxial line, W/G adaptor, magnetron obtained by simulation was compared with experimental results.

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Detonation transmission with an abrupt change in area

  • Hsu, Yao-Chung;Chao, Yei-Chin;Chung, Kung-Ming
    • Advances in aircraft and spacecraft science
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    • v.5 no.5
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    • pp.533-550
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    • 2018
  • Detonation transmission between propane/oxygen (donor) and propane/air (acceptor) with an abrupt area change is experimentally studied. In the donor, there are two types of incident detonation waves: A self-sustained Chapman-Jouguet (CJ) detonation wave and an overdriven detonation wave that is a result of the difference in the initial donor pressure ratios. The piston work is used to characterize the strength of the incident detonation wave. For an incident CJ detonation wave, the re-initiation of a detonation wave in the acceptor depends on the initial pressure in the donor and the expansion ratio. The axisymmetric and non-axisymmetric soot patterns respectively correspond to direct detonation and detonation re-initiation. For an incident overdriven detonation wave, the re-initiation of a detonation wave in the acceptor strongly depends on the degree of overdrive.

Signed degree sequences in signed 3-partite graphs

  • Pirzada, S.;Dar, F.A.
    • Journal of the Korean Society for Industrial and Applied Mathematics
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    • v.11 no.2
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    • pp.9-14
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    • 2007
  • A signed 3-partite graph is a 3-partite graph in which each edge is assigned a positive or a negative sign. Let G(U, V, W) be a signed 3-partite graph with $U\;=\;\{u_1,\;u_2,\;{\cdots},\;u_p\},\;V\;=\;\{v_1,\;v_2,\;{\cdots},\;v_q\}\;and\;W\;=\;\{w_1,\;w_2,\;{\cdots},\;w_r\}$. Then, signed degree of $u_i(v_j\;and\;w_k)$ is $sdeg(u_i)\;=\;d_i\;=\;d^+_i\;-\;d^-_i,\;1\;{\leq}\;i\;{\leq}\;p\;(sdeg(v_j)\;=\;e_j\;=\;e^+_j\;-\;e^-_j,\;1\;{\leq}\;j\;{\leq}q$ and $sdeg(w_k)\;=\;f_k\;=\;f^+_k\;-\;f^-_k,\;1\;{\leq}\;k\;{\leq}\;r)$ where $d^+_i(e^+_j\;and\;f^+_k)$ is the number of positive edges incident with $u_i(v_j\;and\;w_k)$ and $d^-_i(e^-_j\;and\;f^-_k)$ is the number of negative edges incident with $u_i(v_j\;and\;w_k)$. The sequences ${\alpha}\;=\;[d_1,\;d_2,\;{\cdots},\;d_p],\;{\beta}\;=\;[e_1,\;e_2,\;{\cdots},\;e_q]$ and ${\gamma}\;=\;[f_1,\;f_2,\;{\cdots},\;f_r]$ are called the signed degree sequences of G(U, V, W). In this paper, we characterize the signed degree sequences of signed 3-partite graphs.

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Development of Traffic Management Strategies for Incident Conditions on Urban Highways Considering Traffic Safety (교통안전을 고려한 도시부도로의 돌발상황 교통관리전략 수립에 관한 연구)

  • Kim, Young Sun;Lee, Sang Soo;Yun, Ilsoo
    • International Journal of Highway Engineering
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    • v.17 no.4
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    • pp.117-126
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    • 2015
  • PURPOSES : This study aims to investigate the direct and indirect influence areas from incidents on urban interrupted roadways and to develop traffic management strategies for each influence area. METHODS : Based on a literature review, various traffic management strategies for certain incidents were collected. In addition, the relationship between the measure of effectiveness and the characteristics of incidents was explored using an extensive simulation study. RESULTS : From the simulation studies, traffic delays increased as the number of lane closures increased, and the impact of lane closures was reduced to the direction upstream from the incident site. However, the magnitude of the delay change depended on the degree of saturation. Using these characteristics, the direct and indirect influence areas resulting from incidents were defined, and traffic management strategies were established for each direct and indirect influence area and for each level of incident. CONCLUSIONS: The results of this study will contribute to the improvement of national traffic safety by preventing secondary incidents and by effective adaptation to incident events.

Aerosol Incident Angle Dependence of Optical and Magnetic Properties of Bi:YIG Films Deposited with Aerosol Deposition Method (에어로졸성막법으로 성막한 Bi:YIG 막의 광학적/자기적특성에 미치는 에어로졸 입사각도의 영향)

  • Shin, Kwang-Ho
    • Journal of the Korean Magnetics Society
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    • v.18 no.1
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    • pp.9-13
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    • 2008
  • Bismuth-substituted yttrium iron garnet($Bi_{0.5}Y_{2.5}Fe_5O_{12}$) films were deposited with the aerosol deposition method and their magnetic and optical properties were investigated as a function of the aerosol incident angle. The optical transmittance of Bi:YIG increased about 80% with increasing the aerosol incident angle from 0 degree to 30 degree, due to decrease of the defects which were formed from agglutinations of the Bi:YIG particles inside and/or surface of the film. The coercive force also decreased largely with increasing the aerosol incident angle due to the reduction of the collision energy between the particles and the substrate and the decrease of the defects.

The Influence of Cental Obstruction and Gaussian Factor on the Central Spot Distribution and the Encircled Energy (굉학계의 중앙 차폐와 가우시안 인자가 중심 Spot 분포와 Encircled Energy에 미치는 영향)

  • Park, Seong-Jong;Sim, Sang-Hyun;Chung, Chang-Sub
    • Journal of Korean Ophthalmic Optics Society
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    • v.10 no.4
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    • pp.347-355
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    • 2005
  • We investigate the distribution of central spot and the encircled energy in order to assess the performance of central obstructed optical system having central obstruction, when the central obstruction and the degree of truncated Gaussian amplitude of incident beam change. When the radius of central obstruction increases the radius of central spot on the image plane decreases, and when the degree of truncated Gaussian amplitude of incident beam increases the radius of central spot on the image plane increases. As the central obstruction and the degree of truncated Gaussian amplitude of incident beam increase, the depth of focus increases and the encircled energy of central spot decreases. We know from theses results that the effect of Gaussian factor is small as the central obstruction increases. These results was applied to develope the large optical reflection system.

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Spatial Smoothing Algorithm Using Spatial Interpolation Technique in Adaptive Array (공간보간 기법을 이용한 공간평활 적응 어레이 알고리듬)

  • 윤동현;문성훈;한동석
    • Proceedings of the IEEK Conference
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    • 2000.09a
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    • pp.545-548
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    • 2000
  • Adaptive array systems are hard to remove all the interferences when incident signals are coherent with a desired signal. In this paper, we propose a modified Duvall beamformer, which performs spatial smoothing using spatial interpolation technique to maintain the degree of freedom. The propose algorithm can minimize the loss on the degree of freedom due to spatial smoothing by forming subarrays with interpolated signals. Simulation results show that the proposed algorithm can remove all the interferences while conventional beamformer cannot.

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Classical Molecular Dynamics Study of Al lonized Physical Vapor Deposition on Silicon Surface (고전 자동역학 방법을 사용한 실리콘 표면위의 이온화된 Al의 물리기상증착에 관한 연구)

  • Kang, Jeong-Won;Lee, Young-Ghik;Mun, Won-Ha;Son, Myung-Sik;Hwang, Ho-Jung
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.895-898
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    • 1999
  • We calculated Al-Absorption, Al-reflection, and Si-etching probabilities as a function of incident angle and energy using classical molecular dynamics (MD) simulation. Variations of the cases of Al-absorption rate and Al-reflection rate are less than that of Si-etching rate. In contrast with general prediction, our simulation results showed that channeling of the <110> direction occurred the most in the case of incident angle between 30degree and 40degree. We investigated that channeling of the <110> directions quite affect Al-absorption rate in silicon. Since Si-etching rate is high and Al-absorption rate by <110> channeling is high, we found that Al ionized physical vapor deposition (PVD) on Si(001) has a different characteristics with Al ionized PVD on A1(111).

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